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المؤلفون: Harsha B Variar, Satendra Kumar Gautam, Ashita Kumar, K M Amogh, Juan Luo, Ning Shi, David Marreiro, Shekar Mallikarjunaswamy, Mayank Shrivastava
المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::49f7da87e65a28b7f6f0b05eef27c23c
https://doi.org/10.1109/irps48203.2023.10118220 -
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المصدر: 2022 IEEE International Conference on Emerging Electronics (ICEE).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ea760f33bab7719d3dcc4473596cede5
https://doi.org/10.1109/icee56203.2022.10117624 -
3
المصدر: 2022 IEEE International Conference on Emerging Electronics (ICEE).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2fde569075428d0f42404caa82dab629
https://doi.org/10.1109/icee56203.2022.10118336 -
4
المصدر: IEEE Transactions on Electron Devices. 67:1902-1905
مصطلحات موضوعية: Physics, Electron density, Row hammer, Transistor, Interference (wave propagation), Topology, Capacitance, Electronic, Optical and Magnetic Materials, law.invention, law, Node (circuits), Electric potential, Electrical and Electronic Engineering, Dram
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5
المصدر: IEEE Transactions on Electron Devices. 66:4170-4175
مصطلحات موضوعية: 010302 applied physics, Dynamic random-access memory, Materials science, business.industry, Transistor, NAND gate, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, law, Gate oxide, Logic gate, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, business, AND gate, Dram, Leakage (electronics)
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المؤلفون: Satendra Kumar Gautam, Sung Ho Jo, S. Maheshwaram, Arvind Kumar, Sherman Steven R, Sanjeev Kumar Manhas
المصدر: 2016 IEEE 8th International Memory Workshop (IMW).
مصطلحات موضوعية: 010302 applied physics, Hardware_MEMORYSTRUCTURES, Materials science, business.industry, Transistor, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, law.invention, law, Electric field, Logic gate, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Work function, 0210 nano-technology, business, Metal gate, Dram, Hardware_LOGICDESIGN, Leakage (electronics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a9a2f0d43573236dbba2cb2412d343a4
https://doi.org/10.1109/imw.2016.7495287