المؤلفون: Bozada, C.A., Barlage, D.W., Barrette, J.P., Dettmer, R.W., Mack, M.P., Sewell, J.S., Via, G.D., Yang, L.W., Helms, D.R., Komiak, J.J.

المصدر: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Gallium arsenide integrated circuit symposium Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE. :155-158 1995

Relation: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

المؤلفون: Kohn, E., Daumiller, I., Kunze, M., Neuburger, M., Seyboth, M., Jenkins, T.J., Sewell, J.S., Van Norstand, J., Smorchkova, Y., Mishra, U.K.

المصدر: IEEE Transactions on Microwave Theory and Techniques IEEE Trans. Microwave Theory Techn. Microwave Theory and Techniques, IEEE Transactions on. 51(2):634-642 Feb, 2003

المؤلفون: Royter, Y., Patterson, P.R., Li, J.C., Elliott, K.R., Hussain, T., Boag-O'Brien, M.F., Duvall, J.R., Montes, M.C., Hitko, D.A., Sewell, J.S., Sokolich, M., Chow, D.H., Brewer, P.D.

المصدر: 2009 IEEE International Conference on Indium Phosphide & Related Materials Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on. :105-110 May, 2009

Relation: 2009 IEEE International Conference on Indium Phosphide & Related Materials (IPRM)

المؤلفون: Cerny, C.L., Via, G.D., Ebel, J.L., DeSalvo, G.C., Quach, T.K., Bozada, C.A., Dettmer, R.W., Gillespie, J.K., Jenkins, T.J., Pettiford, C.I., Sewell, J.S., Ehret, J.E., Merkel, K., Wilson, A., Lyke, J.

المصدر: IEEE Aerospace and Electronic Systems Magazine IEEE Aerosp. Electron. Syst. Mag. Aerospace and Electronic Systems Magazine, IEEE. 13(3):7-14 Mar, 1998

المؤلفون: Liou, J.J., Jenkins, T.J., Liou, L.L., Neidhard, R., Barlage, D.W., Fitch, R., Barrette, J.P., Mack, M., Bozada, C.A., Lee, R.H.Y., Dettmer, R.W., Sewell, J.S.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 43(1):116-122 Jan, 1996

المؤلفون: Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 24(11):677-679 Nov, 2003

المؤلفون: Jessen, G.H, White, B.D, Bradley, S.T, Smith, P.E, Brillson, L.J, Van Nostrand, J.E, Fitch, R, Via, G.D, Gillespie, J.K, Dettmer, R.W, Sewell, J.S

المصدر: In Solid State Electronics 2002 46(9):1427-1431

المؤلفون: Jensen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Asif Khan, M., Binari, S.C.

المصدر: IEEE Electron Device Letters; Nov2003, Vol. 24 Issue 11, p677-679, 3p, 4 Graphs

مصطلحات موضوعية: MODULATION-doped field-effect transistors, ALUMINUM nitride, GALLIUM nitride, SILICON carbide

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