المؤلفون: Mao-Lin Shi, Jing Xu, Ya-Wei Dai, Qian Cao, Lin Chen, Qing-Qing Sun, Peng Zhou, Shi-Jin Ding, David Wei Zhang

المصدر: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2016 13th IEEE International Conference on. :1014-1016 Oct, 2016

Relation: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

المؤلفون: Yuli He, Guang Zheng, Bao Zhu, Xiaohan Wu, Wen-Jun Liu, David Wei Zhang, Shi-Jin Ding

المصدر: Nanomaterials, Vol 13, Iss 11, p 1765 (2023)

مصطلحات موضوعية: Al-doped Hf0.25Zr0.75O2, antiferroelectric, energy storage density, energy storage efficiency, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/13/11/1765; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/9d439c938ed94be8b2df0be2afe15d6a

المؤلفون: Shi-Jin Ding, Hu, H., Chunxiang Zhu, Kim, S.J., Li, M.F., Cho, B.J., Chin, A., Kwong, D.L.

المصدر: Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. Solid-state and integrated circuits technology Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on. 1:403-406 vol.1 2004

Relation: 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings

المؤلفون: Tian‐Yu Wang, Jia‐Lin Meng, Lin Chen, Hao Zhu, Qing‐Qing Sun, Shi‐Jin Ding, Wen‐Zhong Bao, David Wei Zhang

المصدر: InfoMat, Vol 3, Iss 2, Pp 212-221 (2021)

مصطلحات موضوعية: 3D crossbar, brain‐inspired computing, flexible memory, low‐temperature ALD, multilevel storage, Materials of engineering and construction. Mechanics of materials, TA401-492, Information technology, T58.5-58.64

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2567-3165

URL الوصول: https://doaj.org/article/1780913c0e084898a515c9b65aa8e474

المؤلفون: Ya-Wei Huan, Ke Xu, Wen-Jun Liu, Hao Zhang, Dmitriy Anatolyevich Golosov, Chang-Tai Xia, Hong-Yu Yu, Xiao-Han Wu, Qing-Qing Sun, Shi-Jin Ding

المصدر: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)

مصطلحات موضوعية: Nitridation treatment, Band alignment, Few-layer MoS2, β-Ga2O3, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/0d6051b1250f4257aae35e23e5d4d004

المؤلفون: Dan-Dan Liu, Wen-Jun Liu, Jun-Xiang Pei, Lin-Yan Xie, Jingyong Huo, Xiaohan Wu, Shi-Jin Ding

المصدر: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)

مصطلحات موضوعية: ZnO, In–Ga–Zn–O, Nonvolatile memory, Thin-film transistor (TFT), Oxygen vacancy, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/d86e1be5300846afaece6fa461c5d3f5

المؤلفون: Shi-Jin Ding, Hang Hu, Chunxiang Zhu, Sun Jung Kim, Xiongfei Yu, Ming-Fu Li, Byung Jin Cho, Chan, D.S.H., Yu, M.B., Rustagi, S.C., Chin, A., Dim-Lee Kwong

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 51(6):886-894 Jun, 2004

المؤلفون: Lei Zhang, Hao-Wen Guo, Chi Zhang, Wei Zhang, Shi-Jin Ding

المصدر: 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on. :788-791 Oct, 2008

Relation: 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

المؤلفون: Shun-Ming Sun, Wen-Jun Liu, Dmitriy Anatolyevich Golosov, Chen-Jie Gu, Shi-Jin Ding

المصدر: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019)

مصطلحات موضوعية: β-Ga2O3, Contacts, Intermediate semiconductor layer, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-019-3092-x; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/50e1e2576e1e4133a41150df0d993dd7

المؤلفون: Ya-Wei Huan, Wen-Jun Liu, Xiao-Bing Tang, Xiao-Yong Xue, Xiao-Lei Wang, Qing-Qing Sun, Shi-Jin Ding

المصدر: Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019)

مصطلحات موضوعية: Nitridation treatment, Band alignment, Few-layer MoS2, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-019-3020-0; https://doaj.org/toc/1931-7573; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/803c20aee5924ad2a8f5b0eb886f8efd