يعرض 1 - 10 نتائج من 27 نتيجة بحث عن '"Shih-Hsien Huang"', وقت الاستعلام: 1.09s تنقيح النتائج
  1. 1
    مؤتمر
    Ge gate-all-around FETs on Si

    المؤلفون: Liu, C. W., I-Hsieh Wong, Yen-Ting Chen, Wen-Hsien Tu, Shih-Hsien Huang, Shu-Han Hsu

    المصدر: 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on. :1-4 Oct, 2014

    Relation: 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

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  2. 2
    Traduction littéraire comme vecteur de la civilité : la réception de Duras à Taïwan via la traduction de Hu Pin-Ching

    المؤلفون: Shih-Hsien, Huang, Te-Yu, Lin

    المصدر: Monde chinois. 2023, 69(2), p. 114-130.

    الإتاحة: https://www.cairn.info/revue-monde-chinois-2022-2-page-114.htm

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  3. 3
    مؤتمر
    The study of real-timed GPS navigation accuracy during approach and landing of an ultralight vehicle

    المؤلفون: Fei-Bin Hsiao, Shih-Hsien Huang, Meng-Tse Lee

    المصدر: International Conference on Recent Advances in Space Technologies, 2003. RAST '03. Proceedings of Recent advances in space technology Recent Advances in Space Technologies, 2003. RAST '03. International Conference on. Proceedings of. :375-384 2003

    Relation: Proceedings of International Conference on Recent Advances in Space Technologies

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  4. 4
    مؤتمر
    In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring Ion = 828 µA/µm, Ion/Ioff ∼ 1×105, DIBL= 16–54 mV/V, and 1.4X external strain enhancement

    المؤلفون: I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Yu-Sheng Chen, Tai-Cheng Shieh, Tzu-Yao Lin, Huang-Siang Lan, Liu, C. W.

    المصدر: 2014 IEEE International Electron Devices Meeting Electron Devices Meeting (IEDM), 2014 IEEE International. :9.6.1-9.6.4 Dec, 2014

    Relation: 2014 IEEE International Electron Devices Meeting (IEDM)

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  5. 5
    GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling

    المؤلفون: Chih-Chiang Chang, Fu-Bang Chen, Yen-Chin Wang, Chun-Nan Liu, Ming-Lun Lee, Shih-Hsien Huang, Yu Hsiang Yeh, Jinn-Kong Sheu, Wei-Yu Yen

    المصدر: IEEE Transactions on Electron Devices. 63:1122-1127

    مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Wafer bonding, 02 engineering and technology, Green-light, 021001 nanoscience & nanotechnology, medicine.disease_cause, Epitaxy, Laser, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Optics, law, 0103 physical sciences, medicine, Optoelectronics, Electrical and Electronic Engineering, Photonics, 0210 nano-technology, business, Ultraviolet, Diode, Light-emitting diode

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::214de497530bce2a8d1fe1458a3c7a6e
    https://doi.org/10.1109/ted.2016.2518698

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  6. 6
    In-plane g factor of low-density two-dimensional holes in a Ge quantum well

    المؤلفون: Yen Chuang, Chee-Wee Liu, Shih-Hsien Huang, Tzu-Ming Lu, Charles Thomas Harris, Jiun-Yun Li

    مصطلحات موضوعية: Physics, In plane, Condensed matter physics, g factor, Low density, Quantum well

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::910d40665ca6a22cbf2661174e612f5c
    https://doi.org/10.2172/1413417

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  7. 7
    Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si

    المؤلفون: Yu-Sheng Chen, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, I-Hsieh Wong, Chee-Wee Liu

    المصدر: IEEE Transactions on Nanotechnology. 14:878-882

    مصطلحات موضوعية: Materials science, Condensed matter physics, Silicon, Scattering, Doping, Fin width, chemistry.chemical_element, Nanotechnology, Computer Science Applications, chemistry, Impurity, MOSFET, Boron doping, Surface roughness, Electrical and Electronic Engineering

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::119ebb69ed73617a570f4277157e7ecf
    https://doi.org/10.1109/tnano.2015.2456182

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  8. 8
    Iminosugar C-Glycoside Analogues of α-d-GlcNAc-1-Phosphate: Synthesis and Bacterial Transglycosylase Inhibition

    المؤلفون: Lin-Ya Huang, Ting-Jen R. Cheng, Yi-Fan Chang, Shih-Hsien Huang, Mathias Schelwies, Che-Hsiung Hsu, Chi-Huey Wong, Sebastian Enck, Wei-Chieh Cheng

    المصدر: The Journal of Organic Chemistry

    مصطلحات موضوعية: Glycoside Hydrolases, Molecular Structure, Lipid II, biology, Stereochemistry, Organic Chemistry, Iminosugar, Glycosyltransferases, Stereoisomerism, Pyrophosphate, Phosphonate, Article, Acetylglucosamine, Imino Sugars, chemistry.chemical_compound, Bacterial Proteins, chemistry, Glycosyltransferase, biology.protein, Glycoside hydrolase, Glycosides, Piperidine

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c593eac4f6db4c0d5b511f3e5ea1af5
    https://doi.org/10.1021/jo501340s

    Find this issue from the American Chemical Society
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  9. 9
    Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(001)

    المؤلفون: Sheng Chen Twan, Shih Hsien Huang, Lien Tai Chen, Jung Chih Hu, Tu Lee, Sheng Wei Lee, Shao Liang Cheng

    المصدر: Journal of Alloys and Compounds. 586:S362-S367

    مصطلحات موضوعية: Materials science, Annealing (metallurgy), Mechanical Engineering, Metallurgy, Alloy, Metals and Alloys, Analytical chemistry, chemistry.chemical_element, engineering.material, Microstructure, Nickel, chemistry.chemical_compound, chemistry, Mechanics of Materials, Transmission electron microscopy, Silicide, Materials Chemistry, engineering, Thermal stability, Sheet resistance

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c78bec88c2e8be6dfacca6f9d1d8ce04
    https://doi.org/10.1016/j.jallcom.2013.02.133

    View record from ScienceDirect
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  10. 10
    High performance Ge junctionless gate-all-around NFETs with simultaneous Ion =1235 μA/μm at Vov=Vds=1V, SS=95 mV/dec, high Ion/Ioff=2×106, and reduced noise power density using S/D dopant recovery by selective laser annealing

    المؤلفون: Hung-Yu Ye, Shih-Hsien Huang, Yu-Cheng Shen, Yu-Jiun Peng, Chun-Ti Lu, Fang-Liang Lu, C. W. Liu, Huang-Siang Lan, Jhih-Yang Yan, I-Hsieh Wong

    المصدر: 2016 IEEE International Electron Devices Meeting (IEDM).

    مصطلحات موضوعية: 010302 applied physics, Materials science, Dopant, business.industry, Scattering, Annealing (metallurgy), Doping, Electrical engineering, Silicon on insulator, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Gallium arsenide, Ion, chemistry.chemical_compound, Ion implantation, chemistry, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::69998bec74347dd8cbba4ffc6e5cea0c
    https://doi.org/10.1109/iedm.2016.7838536

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