نتائج البحث - "Shihuan Lin"

1

مؤتمر

Surface recombination/generation velocity in metal-oxide-silicon field-effect transistors

المؤلفون: Chen, Zuhui, Xing Zhou, Guojun Zhu, Shihuan Lin

المصدر: 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of. :123-126 Dec, 2009

Relation: 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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Subcircuit Compact Model for Dopant-Segregated Schottky Gate-All-Around Si-Nanowire MOSFETs

المؤلفون: Kin Leong Pey, Xing Zhou, Yafei Yan, Junbin Zhang, Guojun Zhu, Shihuan Lin, Yoke-King Chin, Guan Huei See, Zuhui Chen

المصدر: IEEE Transactions on Electron Devices. 57:772-781

مصطلحات موضوعية: Materials science, business.industry, Ambipolar diffusion, Schottky barrier, Nanowire, Schottky diode, Thermionic emission, Electronic, Optical and Magnetic Materials, Logic gate, MOSFET, Electronic engineering, Optoelectronics, Electrical and Electronic Engineering, business, Quantum tunnelling

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9bf2cd003bd41afc6f98224cfb52d823
https://doi.org/10.1109/ted.2010.2041513

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A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain

المؤلفون: Guojun Zhu, Teck Seng Lee, Yoke-King Chin, Guan Huei See, Xing Zhou, Kin Leong Pey, Shihuan Lin, Lay Kee Ang

المصدر: IEEE Transactions on Electron Devices. 56:1100-1109

مصطلحات موضوعية: Materials science, Current limiting, Condensed matter physics, Ambipolar diffusion, Schottky barrier, MOSFET, Nanowire, Thermionic emission, Nanotechnology, Electrical and Electronic Engineering, Current density, Quantum tunnelling, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::65147179dfd252818ef3aa605cbb2671
https://doi.org/10.1109/ted.2009.2015161

4

ATOMISTIC SIMULATION OF GATE EFFECT ON NANOSCALE INTRINSIC Si FIELD-EFFECT TRANSISTORS

المؤلفون: Shihuan Lin, X. F. Wang, M. Yee, Teck-Seng Lee, Zhufeng Hou, Xing Zhou, Zhenhua Yao, L. N. Zhao

المصدر: International Journal of Nanoscience. :113-117

مصطلحات موضوعية: Materials science, Condensed matter physics, Bioengineering, Atomistix ToolKit, Nanotechnology, Insulator (electricity), Condensed Matter Physics, Computer Science Applications, Multigrid method, Linear combination of atomic orbitals, General Materials Science, Field-effect transistor, Density functional theory, Boundary value problem, Electrical and Electronic Engineering, Poisson's equation, Biotechnology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a170f91eff18b7d593ba85f1515b13d6
https://doi.org/10.1142/s0219581x09005827

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'Ground-Referenced' Model for Three-Terminal Symmetric Double-Gate MOSFETs With Source/Drain Symmetry

المؤلفون: Guan Huei See, Xing Zhou, Shihuan Lin, Guojun Zhu

المصدر: IEEE Transactions on Electron Devices. 55:2526-2530

مصطلحات موضوعية: Physics, Condensed matter physics, media_common.quotation_subject, Electron, Topology, Asymmetry, Symmetry (physics), Electronic, Optical and Magnetic Materials, Terminal (electronics), Logic gate, MOSFET, Electric potential, Electrical and Electronic Engineering, media_common, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c7b637dc855210d3dea3a5e3229aca3c
https://doi.org/10.1109/ted.2008.928022

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A Compact Model Satisfying Gummel Symmetry in Higher Order Derivatives and Applicable to Asymmetric MOSFETs

المؤلفون: Siau Ben Chiah, Zhaomin Zhu, Xing Zhou, Guojun Zhu, Shihuan Lin, Guan Hui Lim, Chengqing Wei, K. Chandrasekaran, Guan Huei See

المصدر: IEEE Transactions on Electron Devices. 55:624-631

مصطلحات موضوعية: Engineering, Equivalent series resistance, business.industry, Velocity saturation, media_common.quotation_subject, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Topology, Asymmetry, Electronic, Optical and Magnetic Materials, Control theory, MOSFET, Voltage source, Electric potential, Electrical and Electronic Engineering, business, Smoothing, Voltage, media_common

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6938f86d7a971045cf29b4517c1ea7a6
https://doi.org/10.1109/ted.2007.912951

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Rigorous Surface-Potential Solution for Undoped Symmetric Double-Gate MOSFETs Considering Both Electrons and Holes at Quasi NonEquilibrium

المؤلفون: Chengqing Wei, Guan Hui Lim, S.C. Rustagi, Xing Zhou, Guojun Zhu, Shihuan Lin, Guan Huei See, Zhaomin Zhu

المصدر: IEEE Transactions on Electron Devices. 55:616-623

مصطلحات موضوعية: Physics, Condensed matter physics, business.industry, Electrical engineering, Non-equilibrium thermodynamics, Charge (physics), Electron, Capacitance, Electronic, Optical and Magnetic Materials, Singularity, MOSFET, Electrical and Electronic Engineering, Poisson's equation, business, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e4e28940397647d2ebdd6f83c715896f
https://doi.org/10.1109/ted.2007.912999

8

A unified compact model for emerging DG FinFETs and GAA nanowire MOSFETs including long/short-channel and thin/thick-body effects

المؤلفون: Xing Zhou, M. K. Srikanth, Junbin Zhang, Guojun Zhu, Chengqing Wei, Shihuan Lin, Zuhui Chen

المصدر: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

مصطلحات موضوعية: Physics, business.industry, Logic gate, MOSFET, Electronic engineering, Nanowire, Optoelectronics, Core model, business, Communication channel

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::229edf71fc08946139e7a7a717c4786a
https://doi.org/10.1109/icsict.2010.5667327

9

Interface-trap modeling for silicon-nanowire MOSFETs

المؤلفون: Xing Zhou, Guojun Zhu, Shihuan Lin, Zuhui Chen

المصدر: 2010 IEEE International Reliability Physics Symposium.

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c8d3489c885ab50aa27cf991bff8b432
https://doi.org/10.1109/irps.2010.5488693

10

Surface recombination/generation velocity in metal-oxide-silicon field-effect transistors

المؤلفون: Xing Zhou, Shihuan Lin, Guojun Zhu, Zuhui Chen

المصدر: 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).

مصطلحات موضوعية: Physics, Silicon, business.industry, Carrier generation and recombination, Transistor, chemistry.chemical_element, Carrier lifetime, law.invention, chemistry, law, MOSFET, Optoelectronics, Energy level, Field-effect transistor, Atomic physics, business, Recombination

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::78928e1ab111bb288a394b45690a460c
https://doi.org/10.1109/edssc.2009.5394175

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