نتائج البحث - "Shuhei Mitani"

1

Clinical perspectives on vagus nerve stimulation: present and future

المؤلفون: Eibhlin Goggins, Shuhei Mitani, Shinji Tanaka

المصدر: Clinical Science. 136:695-709

مصطلحات موضوعية: Vagus Nerve Stimulation, Vagus Nerve, General Medicine

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d4ee7b0562a8aea8df84f36dbf97fd0
https://doi.org/10.1042/cs20210507

2

دورية أكاديمية

Clinical perspectives on vagus nerve stimulation: present and future.

المؤلفون: Goggins, Eibhlin, Shuhei Mitani, Shinji Tanaka

المصدر: Clinical Science; May2022, Vol. 136 Issue 9, p695-709, 15p

مصطلحات موضوعية: VAGUS nerve stimulation, VAGUS nerve

3

4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology

المؤلفون: Shuhei Mitani, Kazuhiro Tsuruta, Toshimasa Yamamoto, Aiko Ichimura, Yuichi Takeuchi, Yasuhiro Ebihara, Masato Noborio, Shoji Mizuno

المصدر: Materials Science Forum. 924:707-710

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::00fc605c43d188ebc470931d391228d6
https://doi.org/10.4028/www.scientific.net/msf.924.707

Find this article in full text from ProQuest

4

Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density

المؤلفون: Shuhei Mitani, Junichi Uehara, Masato Noborio, Yuichi Takeuchi, Aiko Ichimura, Yasuhiro Ebihara, Kazuhiro Tsuruta

المصدر: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, 020208 electrical & electronic engineering, 02 engineering and technology, 01 natural sciences, 0103 physical sciences, Trench, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Degradation (geology), business, Current density, High current density, Diode

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::380f8a1983902ac322f6182de87cc6b5
https://doi.org/10.1109/ispsd.2019.8757567

5

Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd

المؤلفون: Shuhei Mitani, Yuichi Takeuchi, Masato Noborio, Toshimasa Yamamoto, Yasuhiro Ebihara, Aiko Ichimura, Shoji Mizuno, Kazuhiro Tsuruta

المصدر: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f8d3599308f2682ebdef8218ca631f63
https://doi.org/10.1109/ispsd.2018.8393598

6

Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing

المؤلفون: Takashi Kirino, Daisuke Ikeguchi, Takuji Hosoi, Takashi Nakamura, Heiji Watanabe, Yuki Nakano, Shuhei Mitani, Takayoshi Shimura

المصدر: Materials Science Forum. :741-744

مصطلحات موضوعية: Materials science, Annealing (metallurgy), business.industry, Mechanical Engineering, Light irradiation, Thermal treatment, Condensed Matter Physics, medicine.disease_cause, Mechanics of Materials, State density, medicine, Optoelectronics, General Materials Science, Irradiation, Flat band, business, Ultraviolet

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::33c721cac3033c58f42db986fcabf3e1
https://doi.org/10.4028/www.scientific.net/msf.740-742.741

7

Dielectric Properties of Thermally Grown SiO2 on 4H-SiC(0001) Substrates

المؤلفون: Yusuke Uenishi, Yuki Nakano, Takayoshi Shimura, Takashi Nakamura, Heiji Watanabe, Shuhei Mitani, Takuji Hosoi

المصدر: Materials Science Forum. :605-608

مصطلحات موضوعية: Permittivity, Thermal oxidation, Materials science, Mechanical Engineering, Analytical chemistry, Oxide, chemistry.chemical_element, Equivalent oxide thickness, Dielectric, Condensed Matter Physics, Secondary ion mass spectrometry, chemistry.chemical_compound, X-ray photoelectron spectroscopy, chemistry, Mechanics of Materials, General Materials Science, Tin

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2b924ca82d7c0c9184281259ea3e0ce6
https://doi.org/10.4028/www.scientific.net/msf.740-742.605

8

Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001)

المؤلفون: Takashi Kirino, Takuji Hosoi, Yuki Nakano, Shuhei Mitani, Takayoshi Shimura, Takashi Nakamura, Heiji Watanabe

المصدر: Current Applied Physics. 12:S79-S82

مصطلحات موضوعية: Thermal oxidation, Materials science, Band gap, Annealing (metallurgy), Oxide, Analytical chemistry, General Physics and Astronomy, Dielectric, law.invention, chemistry.chemical_compound, Capacitor, chemistry, X-ray photoelectron spectroscopy, law, General Materials Science, Electronic band structure

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c093aff23c2160b124eb77fc8d9b871a
https://doi.org/10.1016/j.cap.2012.04.008

View record from ScienceDirect

9

690V, 1.00 mΩcm2 4H-SiC Double-Trench MOSFETs

المؤلفون: Takashi Nakamura, Ryota Nakamura, Hiroyuki Sakairi, Shuhei Mitani, Yuki Nakano

المصدر: Materials Science Forum. :1069-1072

مصطلحات موضوعية: Materials science, business.industry, Mechanical Engineering, Electrical engineering, JFET, Time-dependent gate oxide breakdown, Condensed Matter Physics, Mechanics of Materials, MOSFET, Trench, Optoelectronics, General Materials Science, business, AND gate, Trench gate, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f5e827ca1d4b75dac3cc74b6415fe6ba
https://doi.org/10.4028/www.scientific.net/msf.717-720.1069

10

Impact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC Interface

المؤلفون: Takashi Nakamura, Takayoshi Shimura, Yuki Nakano, Heiji Watanabe, Yuden Teraoka, Takashi Kirino, Yusuke Uenishi, Shuhei Mitani, Atthawut Chanthaphan, Akitaka Yoshigoe, Takuji Hosoi, Daisuke Ikeguchi

المصدر: Materials Science Forum. :721-724

مصطلحات موضوعية: Materials science, Passivation, Hydrogen, Annealing (metallurgy), business.industry, Mechanical Engineering, chemistry.chemical_element, Hydrogen passivation, Synchrotron radiation photoelectron spectroscopy, Condensed Matter Physics, chemistry, Mechanics of Materials, Fixed charge, Electronic engineering, Optoelectronics, General Materials Science, Electronic band structure, business, Conduction band

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cc506cdb97e2a24b291ab169b3fab397
https://doi.org/10.4028/www.scientific.net/msf.717-720.721

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