يعرض 1 - 10 نتائج من 562 نتيجة بحث عن '"Si-Doping"', وقت الاستعلام: 1.79s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Improved Modulation Bandwidth of c-Plane Micro-LED Arrays by Varying Si Doping in the Quantum Barrier

    المؤلفون: Lei, L., Zhu, Z., Wei, J., Wang, W., Li, G.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(3):1969-1973 Mar, 2024

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  2. 2
    مؤتمر
    Sensitivity Analysis of HEMT Biosensor for Variation in Alx Ga1-xN Layer Alloy Composition, Bulk Trap and Doping

    المؤلفون: Kanrar, Sharmistha Shee, De, Arpan, Sarkar, Subir Kumar

    المصدر: 2024 IEEE 3rd International Conference on Control, Instrumentation, Energy & Communication (CIEC) Control, Instrumentation, Energy & Communication (CIEC), 2024 IEEE 3rd International Conference on. :141-146 Jan, 2024

    Relation: 2024 IEEE 3rd International Conference on Control, Instrumentation, Energy & Communication (CIEC)

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  3. 3
    دورية أكاديمية
    Enhanced Stability of SiZTO TFT Under Positive Voltage and Light Negative Voltage Stress and Modified Hysteresis of the CNTs/SiZTO CMOS Inverter by Si Doping

    المؤلفون: Huang, C., Ma, D., Guo, Z., Yao, H., Lv, K., Tian, Z., Liang, L., Gao, J., Liu, Y., Ding, X.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(8):4213-4219 Aug, 2023

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  4. 4
    مؤتمر
    Multilevel Programming Reliability in Si-doped GeSbTe for Storage Class Memory

    المؤلفون: Lama, G., Bernard, M., Bernier, N., Bourgeois, G., Nolot, E., Castellani, N., Garrione, J., Cyrille, M. C., Navarro, G., Nowak, E.

    المصدر: 2021 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2021 IEEE International. :1-6 Mar, 2021

    Relation: 2021 IEEE International Reliability Physics Symposium (IRPS)

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  5. 5
    دورية أكاديمية
    Effect of Carrier Gas on Silicon Doped GaN Epilayer Characteristics

    المؤلفون: Li, JizhongAff1, IDs11664023105147_cor1, Brabant, Paul, Hannan, Dan, Lawson, David

    المصدر: Journal of Electronic Materials. 52(9):5975-5979

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  6. 6
    دورية أكاديمية
    Laser Activation for Highly Boron-Doped Passivated Contacts

    المؤلفون: Saman Sharbaf Kalaghichi, Jan Hoß, Renate Zapf-Gottwick, Jürgen H. Werner

    المصدر: Solar, Vol 3, Iss 3, Pp 362-381 (2023)

    مصطلحات موضوعية: laser activation, TOPCon solar cells, passivated contact layers, poly Si doping, implied open circuit voltage, sheet conductance, Production of electric energy or power. Powerplants. Central stations, TK1001-1841

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2673-9941/3/3/21; https://doaj.org/toc/2673-9941

    URL الوصول: https://doaj.org/article/73e85ff920c443feafcadf70cbc72ed2

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  7. 7
    دورية أكاديمية
    Structural and electrical characteristics of ultra-thin Si-doped GaN film regrown on patterned GaN/sapphire

    المؤلفون: Shin, Jaehyeok, Noh, Siyun, Lee, Jinseong, Kim, Jin SooAff1, IDs40042023007996_cor4, Choi, Ilgyu, Ahn, Ho-Kyun

    المصدر: Journal of the Korean Physical Society. 82(10):963-969

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  8. 8
    دورية أكاديمية
    Fuzzy CODAS Based Analysis of Wear and Temperature Induced Responses of Si Doped a-C film and CFRPEEK Tribopair

    المؤلفون: Patnaik, LokeswarAff1, IDs12633022022135_cor1, Kumar, Sunil, Maity, Saikat Ranjan, Łępicka, Magdalena, Anderson, A.

    المصدر: Silicon. 15(6):2829-2847

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  9. 9
    مؤتمر
    The influence of direct, delta, and modulation QD Si doping on InAs/GaAs quantum dot solar cells

    المؤلفون: Kim, Dongyoung, Chan, Shun, Tang, Mingchu, Wu, Jiang, Liu, Huiyun

    المصدر: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Photovoltaic Energy Conversion (WCPEC), 2018 IEEE 7th World Conference on. :2759-2762 Jun, 2018

    Relation: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)

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  10. 10
    دورية أكاديمية
    Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs

    المؤلفون: Joshi, V., Tiwari, S.P., Shrivastava, M.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(1):570-577 Jan, 2019

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