يعرض 1 - 7 نتائج من 7 نتيجة بحث عن '"Slah Hlali"', وقت الاستعلام: 0.85s تنقيح النتائج
  1. 1
    Charge density at the Al2O3/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions

    المؤلفون: Neila Hizem, Adel Kalboussi, Slah Hlali

    المصدر: Semiconductors. 51:1625-1633

    مصطلحات موضوعية: 010302 applied physics, Electron density, Materials science, Silicon, Condensed matter physics, Charge density, chemistry.chemical_element, Semiclassical physics, 02 engineering and technology, Semiconductor device, Electron, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry, 0103 physical sciences, 0210 nano-technology, Wave function, Quantum

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::774c2a5a7762b951e977627e7592bde8
    https://doi.org/10.1134/s1063782617120089

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  2. 2
    Investigation of capacitance characteristics in metal/high-k semiconductor devices at different parameters and with and without interface state density (traps)

    المؤلفون: Neila Hizem, Slah Hlali, Adel Kalboussi

    المصدر: Bulletin of Materials Science. 40:1035-1041

    مصطلحات موضوعية: 010302 applied physics, Materials science, Doping, Analytical chemistry, Oxide, 02 engineering and technology, Substrate (electronics), Semiconductor device, 021001 nanoscience & nanotechnology, 01 natural sciences, Capacitance, MIS capacitor, law.invention, chemistry.chemical_compound, Capacitor, chemistry, Mechanics of Materials, law, 0103 physical sciences, General Materials Science, 0210 nano-technology, High-κ dielectric

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2f486a64b5f98a2e8241b0054db17138
    https://doi.org/10.1007/s12034-017-1443-8

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  3. 3
    Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics

    المؤلفون: Slah Hlali, Neila Hizem, Abdelkader Souifi, Adel Kalboussi, L. Militaru

    المساهمون: Laboratoire de Microélectronique et Instrumentations [Monastir], Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM)-Université de Monastir - University of Monastir (UM), INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Microelectronics Reliability
    Microelectronics Reliability, Elsevier, 2017, 75, pp.154. ⟨10.1016/j.microrel.2017.06.056⟩

    مصطلحات موضوعية: Materials science, Gate dielectric, Equivalent oxide thickness, 02 engineering and technology, 01 natural sciences, Capacitance, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, High-κ dielectric, [PHYS]Physics [physics], 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Doping, Electrical engineering, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Capacitor, Semiconductor, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6de5eea8beb52fe1a52f3ae8e3d406ad
    https://doi.org/10.1016/j.microrel.2017.06.056

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  4. 4
    Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-k gate dielectrics investigated in the semi-classical and quantum mechanical models

    المؤلفون: Adel Kalboussi, Slah Hlali, Neila Hizem

    المصدر: Bulletin of Materials Science. 40:67-78

    مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Insulator (electricity), Nanotechnology, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, law.invention, Condensed Matter::Materials Science, Capacitor, Semiconductor, Mechanics of Materials, Gate oxide, law, 0103 physical sciences, Optoelectronics, Condensed Matter::Strongly Correlated Electrons, General Materials Science, 0210 nano-technology, Metal gate, business, High-κ dielectric

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f431e7e59c470d4c652204b2e41b3ac3
    https://doi.org/10.1007/s12034-016-1341-5

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  5. 5
    High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics

    المؤلفون: Slah Hlali, Adel Kalboussi, Neila Hizem

    المصدر: Journal of Computational Electronics. 15:1340-1350

    مصطلحات موضوعية: 010302 applied physics, Materials science, Condensed matter physics, Charge (physics), 02 engineering and technology, Electron, Low frequency, 021001 nanoscience & nanotechnology, 01 natural sciences, MIS capacitor, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, Threshold voltage, Capacitor, law, Gate oxide, Modeling and Simulation, 0103 physical sciences, Electrical and Electronic Engineering, 0210 nano-technology, High-κ dielectric

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5cfda7ef7ee039e1e076c9e4450b6336
    https://doi.org/10.1007/s10825-016-0916-0

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  6. 6
    High temperature and voltage dependent electrical and dielectric properties of TiN/Al2O3/p-Si MIS structure

    المؤلفون: Neila Hizem, Abdelkader Souifi, Slah Hlali, Abdelaali Farji, Adel Kalboussi, L. Militaru

    المساهمون: Inl, Laboratoire INL UMR5270, INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Microélectronique et Instrumentations [Monastir], Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM)-Université de Monastir - University of Monastir (UM)

    المصدر: Journal of Alloys and Compounds
    Journal of Alloys and Compounds, Elsevier, 2017, 713, pp.194

    مصطلحات موضوعية: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Dielectric, Conductivity, [SPI.MAT] Engineering Sciences [physics]/Materials, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [PHYS] Physics [physics], Electrical resistivity and conductivity, 0103 physical sciences, Materials Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, [PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Mechanical Engineering, Metals and Alloys, Biasing, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Arrhenius plot, chemistry, Mechanics of Materials, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Dielectric loss, 0210 nano-technology, Tin

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::997e4894b07828e2deafbc1f8d2abadd
    https://hal.archives-ouvertes.fr/hal-01701530

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  7. 7
    Charge density at the Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Si interface in Metal-Insulator-Semiconductor devices: semiclassical and quantum mechanical descriptions

    المؤلفون: Neila Hizem, Adel Kalboussi, Slah Hlali

    المصدر: Физика и техника полупроводников. 51:1682

    مصطلحات موضوعية: Physics, Condensed matter physics, Interface (computing), Quantum mechanics, Charge density, Semiclassical physics, Semiconductor device, Electrical and Electronic Engineering, Metal insulator, Quantum, Atomic and Molecular Physics, and Optics

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::12543ad3393441ab8bd6a196c2e159c9
    https://doi.org/10.21883/ftp.2017.12.45185.8190

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