يعرض 1 - 10 نتائج من 24 نتيجة بحث عن '"Soo Ho Shin"', وقت الاستعلام: 1.13s تنقيح النتائج
  1. 1
    مؤتمر
    Novel integration technology with capacitor over metal (COM) by using self-aligned dual damascene (SADD) process for 0.15 /spl mu/m stand-alone and embedded DRAMs

    المؤلفون: Won Suk Yang, Yeong Kwan Kim, Soo Ho Shin, Won Seok Lee, Kyu Hyun Lee, Hong Sik Jeong, Jong Ho Lee, Tae Young Chung, Heung Soo Park, Sang In Lee, Kinam Kim, Moon Yong Lee, Chang Gyu Hwang

    المصدر: 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) VLSI technology VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on. :13-14 1999

    Relation: 1999 Symposium on VLSI Technology. Digest of Technical Papers

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  2. 2
    مؤتمر
    A highly reliable 1T/1C ferroelectric memory

    المؤلفون: Dong-Jin Jung, Sung-Yung Lee, Bon-Jae Koo, Yoo-Sang Hwang, Dong-Won Shin, Jin-Woo Lee, Yoon-Soo Chun, Soo-Ho Shin, Mi-Hyang Lee, Hong-Bae Park, Sang-In Lee, Kinam Kim, Jong-Gil Lee

    المصدر: 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) VLSI technology VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on. :122-123 1998

    Relation: 1998 Symposium on VLSI Technology Digest of Technical Papers

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  3. 3
    New Method for Reduction of the Capacitor Leakage Failure Rate Without Changing the Capacitor Structure or Materials in DRAM Mass Production

    المؤلفون: Soonkon Kim, Jong-Min Lee, Jun-Yong Noh, Jung-Hwan Oh, Pyungho Choi, Byoungdeog Choi, Soo-Ho Shin, Hyoungsub Kim

    المصدر: IEEE Transactions on Electron Devices. 65:4839-4845

    مصطلحات موضوعية: 010302 applied physics, Dynamic random-access memory, Materials science, business.industry, chemistry.chemical_element, Failure rate, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Capacitor, chemistry, Hardware_GENERAL, Impurity, law, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Boron, Dram, Leakage (electronics)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5671c88154e558ee3b32e156b679aeed
    https://doi.org/10.1109/ted.2018.2870141

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  4. 4
    Novel Approach for the Reduction of Leakage Current Characteristics of 20 nm DRAM Capacitors With ZrO2–Based High-k Dielectrics

    المؤلفون: Seung-chul Yew, Soo-Ho Shin, Jun-Yong Noh, Jong-Min Lee, Byoungdeog Choi, Dong-sik Park, Hyoungsub Kim

    المصدر: IEEE Electron Device Letters. 38:1524-1527

    مصطلحات موضوعية: Materials science, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Dielectric, 01 natural sciences, law.invention, Hardware_GENERAL, law, Impurity, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, High-κ dielectric, Leakage (electronics), 010302 applied physics, Dynamic random-access memory, Hardware_MEMORYSTRUCTURES, Dielectric strength, business.industry, Electrical engineering, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Capacitor, Optoelectronics, 0210 nano-technology, business, Dram

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::73b5ea08d27b588a01de73f8e8b41636
    https://doi.org/10.1109/led.2017.2755050

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  5. 5
    Modeling of FinFET Self-Heating Effects in multiple FinFET Technology Generations with implication for Transistor and Product Reliability

    المؤلفون: Sangwoo Pae, Hyewon Shim, Hyunchul Sagong, M. Choe, J. Kim, J.M. Park, Soo-Ho Shin, Kihyun Choi, T. Jeong, Won-Jin Kim

    المصدر: 2018 IEEE Symposium on VLSI Technology.

    مصطلحات موضوعية: 010302 applied physics, Computer science, Transistor, Process (computing), 01 natural sciences, law.invention, Reliability engineering, Reliability (semiconductor), law, 0103 physical sciences, Node (circuits), Product (category theory), Self heating, Scaling

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1e7bcec4029b519c6ac14393818acdb8
    https://doi.org/10.1109/vlsit.2018.8510657

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  6. 6
    20nm DRAM: A new beginning of another revolution

    المؤلفون: E. S. Jung, Jin-Seong Park, Shin-Deuk Kim, Hyeongsun Hong, Jung-hyeon Kim, J.M. Park, C. H. Cho, G. Y. Jin, S.W. Nam, Sung-Kee Han, Kwan-Heum Lee, Byoung-Ho Kim, Soo-Ho Shin, Jeong-Wook Seo, Young-Nam Hwang

    المصدر: 2015 IEEE International Electron Devices Meeting (IEDM).

    مصطلحات موضوعية: Materials science, business.industry, Extreme ultraviolet lithography, Nanotechnology, Capacitance, law.invention, Capacitor, law, Extreme ultraviolet, Optoelectronics, Breakdown voltage, business, Lithography, Next-generation lithography, Dram

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7205fb853918535489514bc82307ea4f
    https://doi.org/10.1109/iedm.2015.7409774

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  7. 7
    A New Operating Scheme by Switching the Polarity of Program/Erase Bias for Partially Oxidized Amorphous-Si-Based Charge-Trap Memory

    المؤلفون: Soo-Ho Shin, Young-Kwan Cha, Dea-Gil Cha, In-Kyeong Yoo, Sang-jin Park, Suk-Ho Choi, Youngsoo Park, Jae Woong Hyun, Jung-Hoon Lee

    المصدر: IEEE Transactions on Electron Devices. 53:2847-2849

    مصطلحات موضوعية: Physics, Hardware_MEMORYSTRUCTURES, business.industry, Electrical engineering, NAND gate, Integrated circuit, Flash memory, Electronic, Optical and Magnetic Materials, law.invention, Trap (computing), law, Logic gate, Optoelectronics, Erasure, Commutation, Electrical and Electronic Engineering, business, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::dce20d03ea360b4f8b0918ae17611f72
    https://doi.org/10.1109/ted.2006.884071

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  8. 8
    16 /spl times/ 1.25 Gbit/s WDM-PON based on ASE-injected R-SOAs in 60/spl deg/C temperature range

    المؤلفون: O.K. Jung, C.S. Shim, Dae-Yup Shin, J.S. Lee, Young-Hoon Oh, Sung-Kee Kim, Soo-Ho Shin, Se-Kang Park, L.K. Yun

    المصدر: 2006 Optical Fiber Communication Conference and the National Fiber Optic Engineers Conference.

    مصطلحات موضوعية: Modulation bandwidth, Materials science, Optics, Gigabit, business.industry, Wavelength-division multiplexing, Bandwidth (signal processing), Superradiance, Stimulated emission, Atmospheric temperature range, business, Passive optical network

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::73fd33a08f25fe93ae854e42ec6bd816
    https://doi.org/10.1109/ofc.2006.215350

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  9. 9
    Local-damascene-finFET DRAM integration with p/sup +/ doped poly-silicon gate technology for sub-60nm device generations

    المؤلفون: Wonshik Lee, Seung-Chul Yang, Yang-Keun Park, Byung-Hyuk Roh, Kyu-Hyun Lee, Eun-Cheol Lee, Jin-woo Lee, Yong-Sung Kim, Soo-Ho Shin, Sung-hee Han, Won-suk Yang, Ju-Yong Lee, Dong-il Bae, Bo-Young Song, Jun Han, Joon-Ho Sung, Dong-jun Lee, Kinam Kim, Sang-Hyeon Lee, Tae-Young Chung

    المصدر: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

    مصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, Materials science, Silicon, business.industry, Doping, Transistor, Electrical engineering, Copper interconnect, chemistry.chemical_element, Hardware_PERFORMANCEANDRELIABILITY, Threshold voltage, law.invention, chemistry, law, Low-power electronics, MOSFET, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, business, Dram

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cd4b86c68b50b76ffa5b62d0783d8179
    https://doi.org/10.1109/iedm.2005.1609338

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  10. 10
    A Novel Cell Structure with Bit Line Cap Spacer (BCS) and Top Enlarged Storage Node Contact (TESC) for 90 nm DRAM Technology and Beyond

    المؤلفون: Jun-Pyo Lee, S.B. Kim, E.C. Lee, B.H. Roh, D.I. Bae, I.H. Nam, Sang-Han Lee, Soo-Ho Shin, YongKeun Park, T.Y. Chung, D.J. Lee, C.J. Yun, J.G. Lee

    المصدر: Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.

    مصطلحات موضوعية: Materials science, business.industry, Node (networking), Bit line, Electrical engineering, Nanotechnology, Cell structure, business, Dram

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cdc582ff79997f9822b391bff039126a
    https://doi.org/10.7567/ssdm.2004.b-9-1

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