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1دورية أكاديمية
المؤلفون: Soumen Mazumder, Parthasarathi Pal, Kuan-Wei Lee, Yeong-Her Wang
المصدر: Materials, Vol 15, Iss 24, p 9067 (2022)
مصطلحات موضوعية: Al2O3/SiO2, AlGaN/GaN, MOS-HEMT, post-gate annealing (PGA), Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
وصف الملف: electronic resource
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2دورية أكاديمية
المؤلفون: Cheng-Yu Huang, Soumen Mazumder, Pu-Chou Lin, Kuan-Wei Lee, Yeong-Her Wang
المصدر: Materials, Vol 15, Iss 19, p 6895 (2022)
مصطلحات موضوعية: metal-oxide-semiconductor (MOS), high-electron-mobility transistor (HEMT), Al2O3, ZrO2, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
وصف الملف: electronic resource
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3دورية أكاديمية
المؤلفون: Shun-Kai Yang, Soumen Mazumder, Zhan-Gao Wu, Yeong-Her Wang
المصدر: Materials, Vol 14, Iss 6, p 1534 (2021)
مصطلحات موضوعية: AlGaN/AlN/GaN, MOS-HEMT, HfAlOX, HfO2, interface trap density, post-deposition annealing (PDA), Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
وصف الملف: electronic resource
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4دورية أكاديمية
المؤلفون: Soumen Mazumder, Ssu-Hsien Li, Zhan-Gao Wu, Yeong-Her Wang
المصدر: Crystals, Vol 11, Iss 2, p 136 (2021)
مصطلحات موضوعية: AlGaN/AlN/GaN, gallium oxide, MOS-HEMT, HfSiOX, UV/O3, passivation, Crystallography, QD901-999
وصف الملف: electronic resource
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5
المؤلفون: Soumen Mazumder, Zhan-Gao Wu, Yeong-Her Wang
المصدر: ECS Journal of Solid State Science and Technology. 11:065002
مصطلحات موضوعية: Electronic, Optical and Magnetic Materials
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6
المؤلفون: Zhan Gao Wu, Soumen Mazumder, Yeong-Her Wang, Shun Kai Yang
المصدر: Materials
Volume 14
Issue 6
Materials, Vol 14, Iss 1534, p 1534 (2021)مصطلحات موضوعية: Materials science, Passivation, Annealing (metallurgy), Gate dielectric, High-electron-mobility transistor, lcsh:Technology, AlGaN/AlN/GaN, post-deposition annealing (PDA), Γ-shaped gate, General Materials Science, lcsh:Microscopy, lcsh:QC120-168.85, lcsh:QH201-278.5, business.industry, lcsh:T, HfAlOX, flicker noise, Dangling bond, interface trap density, Subthreshold slope, Threshold voltage, lcsh:TA1-2040, HfO2, Optoelectronics, lcsh:Descriptive and experimental mechanics, Dry etching, lcsh:Electrical engineering. Electronics. Nuclear engineering, business, lcsh:Engineering (General). Civil engineering (General), lcsh:TK1-9971, MOS-HEMT
وصف الملف: application/pdf
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7
المؤلفون: Yeong-Her Wang, Soumen Mazumder
المصدر: ISDCS
مصطلحات موضوعية: Materials science, Passivation, business.industry, Transistor, chemistry.chemical_element, Algan gan, High-electron-mobility transistor, law.invention, Hafnium, Atomic layer deposition, chemistry, law, Optoelectronics, business, Layer (electronics), Surface states
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f4675f79d55b00e7f15b366a688c6487
https://doi.org/10.1109/isdcs49393.2020.9262998 -
8
المؤلفون: Soumen Mazumder, Po Cheng Pan, Ssu-Hsien Li, Zhan-Gao Wu, Yeong-Her Wang
المصدر: Semiconductor Science and Technology. 36:095003
مصطلحات موضوعية: Materials science, Modulation, business.industry, Materials Chemistry, Optoelectronics, State (computer science), Electrical and Electronic Engineering, Performance improvement, Condensed Matter Physics, business, Electronic, Optical and Magnetic Materials, Annealing (glass)
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9
المؤلفون: Y.-H. Wang, Pu Chou Lin, P. S. Pal, Ting Jia Tsai, Soumen Mazumder
المصدر: ECS Journal of Solid State Science and Technology. 10:055019
مصطلحات موضوعية: Trap (computing), Flash (photography), Materials science, Stack (abstract data type), business.industry, Optoelectronics, Algan gan, business, Electronic, Optical and Magnetic Materials, Voltage