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1دورية أكاديمية
المؤلفون: Walter Gonçalez Filho, Matteo Borga, Karen Geens, Deepthi Cingu, Urmimala Chatterjee, Sourish Banerjee, Anurag Vohra, Han Han, Albert Minj, Herwig Hahn, Matthias Marx, Dirk Fahle, Benoit Bakeroot, Stefaan Decoutere
المصدر: Scientific Reports, Vol 13, Iss 1, Pp 1-12 (2023)
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2045-2322
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2دورية أكاديمية
المؤلفون: Kalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
المصدر: Micromachines, Vol 12, Iss 4, p 445 (2021)
مصطلحات موضوعية: semi-vertical, vertical, GaN, pn diodes, leakage modeling, device modeling, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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3دورية أكاديمية
المؤلفون: Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Patrick Diehle, Susanne Hübner, Frank Altmann, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
المصدر: Materials, Vol 14, Iss 9, p 2316 (2021)
مصطلحات موضوعية: vertical GaN, quasi-vertical GaN, reliability, trapping, degradation, MOS, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
وصف الملف: electronic resource
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4دورية أكاديمية
المؤلفون: Jie Wang, Zhanfei Chen, Shuzhen You, Benoit Bakeroot, Jun Liu, Stefaan Decoutere
المصدر: Micromachines, Vol 12, Iss 2, p 199 (2021)
مصطلحات موضوعية: p-GaN gate high-electron mobility transistors, compact model, physics-based models, surface potential, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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5دورية أكاديمية
المؤلفون: Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
المصدر: Materials, Vol 13, Iss 21, p 4740 (2020)
مصطلحات موضوعية: GaN, vertical GaN, trench MOS, gate dielectric, breakdown, trapping, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
وصف الملف: electronic resource
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6
المؤلفون: Shun-Wei Tang, Benoit Bakeroot, Zhen-Hong Huang, Szu-Chia Chen, Wei-Syuan Lin, Ting-Chun Lo, Matteo Borga, Dirk Wellekens, Niels Posthuma, Stefaan Decoutere, Tian-Li Wu
المصدر: IEEE Transactions on Electron Devices. 70:449-453
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7
المؤلفون: Shun-Wei Tang, Zhen-Hong Huang, Szu-Chia Chen, Wei-Syuan Lin, Brice de Jaeger, Dirk Wellekens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere, Tian-Li Wu
المصدر: IEEE Electron Device Letters. 43:1625-1628
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8
المؤلفون: Albert Minj, Karen Geens, Hu Liang, Han Han, Céline Noël, Benoit Bakeroot, Kristof Paredis, Ming Zhao, Thomas Hantschel, Stefaan Decoutere
المصدر: Physical Review Applied. 19
مصطلحات موضوعية: General Physics and Astronomy
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4de47323292a898a1eca10264eba254d
https://doi.org/10.1103/physrevapplied.19.034081 -
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10
المؤلفون: Olga Syshchyk, Thibault Cosnier, Zheng-Hong Huang, Deepthi Cingu, Dirk Wellekens, Anurag Vohra, Karen Geens, Pavan Vudumula, Urmimala Chatterjee, Stefaan Decoutere, Tian-Li Wu, Benoit Bakeroot
المصدر: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8571f244a7df5061d93cad7ecf138acd
https://doi.org/10.1109/essderc55479.2022.9947150