يعرض 1 - 10 نتائج من 56 نتيجة بحث عن '"Stephan Brus"', وقت الاستعلام: 0.94s تنقيح النتائج
  1. 1
    Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-DIT Si-Cap-Free Gate Stack and Optimizing the Channel Strain

    المؤلفون: Antony Premkumar Peter, Kurt Wostyn, Jerome Mitard, O. Richard, Tom Schram, E. Capogreco, Sylvain Baudot, Hugo Bender, Lars-Ake Ragnarsson, Naoto Horiguchi, Hiroaki Arimura, Geert Eneman, Stephan Brus, Paola Favia

    المصدر: 2020 IEEE Symposium on VLSI Technology.

    مصطلحات موضوعية: 010302 applied physics, Materials science, Fin, Silicon, business.industry, chemistry.chemical_element, Germanium, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, Thermal diffusivity, 01 natural sciences, Oxygen, Silicon-germanium, chemistry.chemical_compound, chemistry, Logic gate, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::bcc2528b3867993889ce8a7e2260d111
    https://doi.org/10.1109/vlsitechnology18217.2020.9265035

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  2. 2
    Vertical Nanowire and Nanosheet FETs: Device Features, Novel Schemes for Improved Process Control and Enhanced Mobility, Potential for Faster & More Energy Efficient Circuits

    المؤلفون: E. Vancoille, T. Huynh-Bao, Vasile Paraschiv, E. Vecchio, Eddy Simoen, Jeroen E. Scheerder, Erik Rosseel, Anabela Veloso, Hugo Bender, J. Versluijs, Lieve Teugels, Geert Eneman, W. Li, Boon Teik Chan, Roger Loo, Adrian Chasin, D. Radisic, Farid Sebaai, Andriy Hikavyy, Claudia Fleischmann, Naoto Horiguchi, Philippe Matagne, Katia Devriendt, Stephan Brus, Paola Favia

    المصدر: 2019 IEEE International Electron Devices Meeting (IEDM).

    مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Materials science, business.industry, Nanowire, 02 engineering and technology, Energy consumption, 021001 nanoscience & nanotechnology, 01 natural sciences, Noise (electronics), 0103 physical sciences, Optoelectronics, Node (circuits), 0210 nano-technology, business, Efficient energy use, Nanosheet, Electronic circuit

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8c0575814d1d830065df4a297be4eca1
    https://doi.org/10.1109/iedm19573.2019.8993602

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  3. 3
    Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si

    المؤلفون: Steven Demuynck, J. Franco, Kurt Wostyn, L.-A. Ragnarsson, Thierry Conard, Stephan Brus, Paola Favia, Naoto Horiguchi, Jerome Mitard, E. Capogreco, Hiroaki Arimura, Adrian Chasin

    المصدر: 2019 IEEE International Electron Devices Meeting (IEDM).

    مصطلحات موضوعية: Interface layer, Materials science, business.industry, Oxide, 02 engineering and technology, Dielectric, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, chemistry.chemical_compound, Stack (abstract data type), chemistry, Optoelectronics, Work function, Wafer, 0210 nano-technology, business, Scavenging, AND gate

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c1d63ef37d1dfe1c482818ed9cfb32bb
    https://doi.org/10.1109/iedm19573.2019.8993467

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  4. 4
    (Invited) Challenges on Surface Conditioning in 3D Device Architectures: Triple-Gate FinFETs, Gate-All-Around Lateral and Vertical Nanowire FETs

    المؤلفون: E. Vecchio, Roger Loo, Geert Eneman, W. Li, Nadine Collaert, C. Lorant, Geert Hellings, Davit Melkonyan, Trong Huynh-Bao, Philippe Matagne, Erik Rosseel, Arturo Sibaja-Hernandez, Farid Sebaai, Anabela Veloso, Claudia Fleischmann, Dennis H. van Dorp, Niamh Waldron, Katia Devriendt, Zheng Tao, Dan Mocuta, Bernardette Kunert, Efrain Altamirano-Sanchez, Lieve Teugels, Stephan Brus, Philippe Marien, Alexey Milenin, Vasile Paraschiv, Eddy Simoen, Boon Teik Chan

    المصدر: ECS Transactions. 80:3-20

    مصطلحات موضوعية: Engineering, Fabrication, business.industry, Nanowire, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Scaling limit, CMOS, Hardware_INTEGRATEDCIRCUITS, Process control, Optoelectronics, Parasitic extraction, Static random-access memory, business, AND gate, Hardware_LOGICDESIGN

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e7f3a6b4d2f490c789fb8b77f74a4c5
    https://doi.org/10.1149/08002.0003ecst

    View this record from the Institute of Physics
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  5. 5
    A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

    المؤلفون: Daire J. Cott, Stephan Brus, K. Kenis, Dan Mocuta, Jerome Mitard, D. H. van Dorp, Nadine Collaert, Hiroaki Arimura, E. Capogreco, Roger Loo, A. Opdebeeck, Guillaume Boccardi, V. De Heyn, L.-A. Ragnarsson, Liesbeth Witters, Kurt Wostyn, Frank Holsteyns, Thierry Conard, Samuel Suhard, Naoto Horiguchi

    المصدر: 2019 Symposium on VLSI Technology.

    مصطلحات موضوعية: 010302 applied physics, Electron mobility, Reliability (semiconductor), Materials science, Gate oxide, Surface preparation, 0103 physical sciences, Analytical chemistry, Gate stack, Fin width, Surface oxidation, 01 natural sciences, Deposition (law)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::372d860fefbeb4848dc647da0126fe8d
    https://doi.org/10.23919/vlsit.2019.8776535

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  6. 6
    BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration

    المؤلفون: J. Franco, Daire J. Cott, Guido Groeseneken, Lars-Ake Ragnarsson, Gerhard Rzepa, Tibor Grasser, Anne Vandooren, Z. Wu, Julien Ryckaert, Nadine Collaert, Hiroaki Arimura, B. Kaczer, Naoto Horiguchi, V. De Heyn, Geert Hellings, D. Linten, Stephan Brus

    المصدر: 2018 IEEE International Electron Devices Meeting (IEDM).

    مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Doping, Transistor, Stacking, Gate stack, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, PMOS logic, CMOS, law, 0103 physical sciences, Thermal, Optoelectronics, 0210 nano-technology, business, NMOS logic

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cac7cfe23ffaae1f82482046a982ae93
    https://doi.org/10.1109/iedm.2018.8614559

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  7. 7
    Scaled spintronic logic device based on domain wall motion in magnetically interconnected tunnel junctions

    المؤلفون: V. D. Nguyen, M.M. Heyns, Sebastien Couet, Danny Wan, Thibaut Devolder, Iuliana Radu, Ian A. Young, Mauricio Manfrini, Eline Raymenants, Stephan Brus, Dmitri E. Nikonov, Sasikanth Manipatruni, Laurent Souriau, Dan Mocuta, A. Thiam, Odysseas Zografos, Adrien Vaysset

    المساهمون: IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), Intel Corporation [USA], Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

    المصدر: 2018 IEEE International Electron Devices Meeting (IEDM)
    2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, France. pp.36.4.1-36.4.4, ⟨10.1109/IEDM.2018.8614587⟩

    مصطلحات موضوعية: 010302 applied physics, Physics, Magnetic domain, Spintronics, Magnetoresistance, business.industry, 020208 electrical & electronic engineering, Motion (geometry), 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 01 natural sciences, Domain (software engineering), Domain wall (magnetism), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Torque, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], business, Quantum tunnelling, ComputingMilieux_MISCELLANEOUS

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa462ff350d620b093b13ed5bba2098d
    https://hal.archives-ouvertes.fr/hal-02370312

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  8. 8
    WS2 transistors on 300 mm wafers with BEOL compatibility

    المؤلفون: Cedric Huyghebaert, A. Thiam, Benjamin Groven, Safak Sayan, Daniele Chiappe, Tom Schram, Katia Devriendt, Inge Asselberghs, Markus Heyne, M. Lux, Annelies Delabie, Eddy Kunnen, Iuliana Radu, Matty Caymax, Quentin Smets, Stephan Brus, A. Juncker, D. Lin

    المصدر: ESSDERC

    مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, business.industry, Transistor, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, Back end of line, Atomic layer deposition, chemistry, law, Logic gate, 0103 physical sciences, Optoelectronics, Wafer, 0210 nano-technology, business, Tin

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::750ffc1730210770308b04a569fcd78e
    https://doi.org/10.1109/essderc.2017.8066629

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  9. 9
    Challenges and opportunities of vertical FET devices using 3D circuit design layouts

    المؤلفون: Erik Rosseel, Julien Ryckaert, E. Vecchio, W. Li, Philippe Matagne, Katia Devriendt, M. Ercken, J. Versluijs, Anabela Veloso, Stephan Brus, C. Delvaux, Z. Tao, Vasile Paraschiv, Nadine Collaert, Boon Teik Chan, Dan Mocuta, Niamh Waldron, Efrain Altamirano-Sanchez, T. Huynh-Bao

    المصدر: 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

    مصطلحات موضوعية: 010302 applied physics, Engineering, Hardware_MEMORYSTRUCTURES, business.industry, Circuit design, Transistor, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, law, Logic gate, 0103 physical sciences, Vertical direction, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Static random-access memory, 0210 nano-technology, business, Scaling, Hardware_LOGICDESIGN, Voltage, Leakage (electronics)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3ef539062f48cee934246624d382a7b5
    https://doi.org/10.1109/s3s.2016.7804409

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  10. 10
    Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells

    المؤلفون: Erik Rosseel, Julien Ryckaert, Efrain Altamirano-Sanchez, Philippe Matagne, T. Huynh-Bao, Katia Devriendt, Vasile Paraschiv, Adrian Chasin, Bertrand Parvais, Tsvetan Ivanov, Aaron Thean, A. Sibaja-Hernandez, Z. Tao, J. Versluijs, Eddy Simoen, Anabela Veloso, E. Vecchio, O. Richard, Boon Teik Chan, M. Ercken, B. Kaczer, Samuel Suhard, Stephan Brus, K. De Meyer, S. Ramesh, C. Delvaux, Nadine Collaert, Hugo Bender, P. Lagrain, Niamh Waldron

    المساهمون: Electronics and Informatics, Physics, Faculty of Medicine and Pharmacy, Vriendenkring VUB, Faculty of Arts and Philosophy, Chemical Engineering and Industrial Chemistry, Faculty of Engineering

    المصدر: 2016 IEEE Symposium on VLSI Technology.

    مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Doping, Stacking, Nanowire, Electrical engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Noise (electronics), PMOS logic, 0103 physical sciences, Optoelectronics, Static random-access memory, Electrical and Electronic Engineering, 0210 nano-technology, business, NMOS logic, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f64b857c9947bedfab2383d329a1f103
    https://doi.org/10.1109/vlsit.2016.7573409

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