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1مؤتمر
المؤلفون: Kharwar, Saurabh, Sinha, Soham, Agarwal, Tarun Kumar
المصدر: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024
Relation: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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2دورية أكاديمية
المؤلفون: Chen, Ying, Huang, Zhuorui, Liu, Huawei, Yu, Guoliang, Zhang, Jinding, Xu, Zheyuan, Chen, MingxingAff2, Aff3, Li, Dong, Ma, Chao, Huang, Ming, Zhu, Xiaoli, Chen, ShulaAff1, IDs4084302429747_cor12, Jiang, YingAff1, IDs4084302429747_cor13, Pan, AnlianAff1, Aff2, IDs4084302429747_cor14
المصدر: Science China Materials. 67(7):2232-2238
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3دورية أكاديمية
المؤلفون: Saini, S., Bindal, N., Kaushik, B.K.
المصدر: IEEE Open Journal of Nanotechnology IEEE Open J. Nanotechnol. Nanotechnology, IEEE Open Journal of. 4:1-9 2023
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4دورية أكاديمية
المؤلفون: Xu, Xue, Dong, Ping-Li, Chai, Yu-Yun, Yang, Run, Ma, Zhen-Hui, Lu, Chi-ChongAff1, IDs12598023024435_cor6
المصدر: Rare Metals. 43(1):298-308
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5مؤتمر
المؤلفون: Chakraborty, Rajat, Subrina, Samia
المصدر: 2021 IEEE International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE) Electrical and Computer Engineering (WIECON-ECE), 2021 IEEE International Women in Engineering (WIE) Conference on. :51-54 Dec, 2021
Relation: 2021 IEEE International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE)
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6مؤتمر
المؤلفون: Chen, Chieh-Yang, Li, Yiming
المصدر: 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2021 International Conference on. :146-149 Sep, 2021
Relation: 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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7مؤتمرEffect of biaxial strain on the electronic structure of Nb-doped WSe2 monolayer: a theoretical study
المؤلفون: Chowdhury, Sayantika, Venkateswaran, P., Somvanshi, D.
المصدر: 2021 Devices for Integrated Circuit (DevIC) Integrated Circuit (DevIC), 2021 Devices for. :79-83 May, 2021
Relation: 2021 Devices for Integrated Circuit (DevIC)
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8دورية أكاديميةTopology of boron substitutional defects in single-walled carbon nanotubes: A first-principles study
المؤلفون: Wutthisak Prachamon, Oruethai Jaiboon, Sittipong Komin, Chesta Ruttanapun, Sukit Limpijumnong
المصدر: Carbon Trends, Vol 15, Iss , Pp 100337- (2024)
مصطلحات موضوعية: SWCNT, Substitutional doping, Primitive nanodomain, Optical, NMR, XANES, Chemistry, QD1-999
وصف الملف: electronic resource
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9دورية أكاديمية
المؤلفون: Masoudi, Maryam, Akhoundi Khezrabad, Mohammad SadeqAff1, IDs1166402310459x_cor2, Shokri, AliasgharAff1, Aff2
المصدر: Journal of Electronic Materials. 52(8):5345-5351
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10دورية أكاديمية
المؤلفون: Van Tu Vu, Minh Chien Nguyen, Whan Kyun Kim, Van Dam Do, Woo Jong Yu
المصدر: Advanced Electronic Materials, Vol 10, Iss 4, Pp n/a-n/a (2024)
مصطلحات موضوعية: degenerate, heterostructure, metallic TMDs, one‐step growth, substitutional doping, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2199-160X