يعرض 1 - 10 نتائج من 3,645 نتيجة بحث عن '"Subthreshold swing"', وقت الاستعلام: 1.45s تنقيح النتائج
  1. 1
    دورية أكاديمية
    One-Transistor Poly-Si Memory Devices With Near-Zero Subthreshold Swing and Extended Retention Time

    المؤلفون: Kuo, P.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(6):1008-1011 Jun, 2024

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  2. 2
    دورية أكاديمية
    Understanding HZO Thickness Scaling in Si FeFETs: Low Operating Voltage, Fast Wake-Up, and Suppressed Charge Trapping

    المؤلفون: Cai, Z., Toprasertpong, K., Liu, Z., Takenaka, M., Takagi, S.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(6):3633-3639 Jun, 2024

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  3. 3
    دورية أكاديمية
    Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography

    المؤلفون: Sung, C., Na, J., Nam, S., Cho, S.H.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(6):1020-1023 Jun, 2024

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  4. 4
    دورية أكاديمية
    Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K

    المؤلفون: Jeong, J., Kim, J., Lee, J., Suh, Y., Rheem, N., Kim, S.K., Park, J., Kim, B.H., Kim, J.P., Park, S., Kim, S.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(5):3390-3395 May, 2024

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  5. 5
    مؤتمر
    Enhancing Performance and Versatility of DG-JL-TFET with A1N Piezoelectric Materials for High-Power Applications

    المؤلفون: R, Tamilarasi, S, Karthik

    المصدر: 2024 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI) Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI), 2024 International Conference on. :1-6 Apr, 2024

    Relation: 2024 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI)

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  6. 6
    مؤتمر
    Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs

    المؤلفون: Shi, Limeng, Qian, Jiashu, Jin, Michael, Bhattacharya, Monikuntala, Yu, Hengyu, White, Marvin H., Agarwal, Anant K., Shimbori, Atsushi

    المصدر: 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-6 Apr, 2024

    Relation: 2024 IEEE International Reliability Physics Symposium (IRPS)

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  7. 7
    مؤتمر
    A Comprehensive Review and Comparative Analysis the TFET and DG-JL-TFET

    المؤلفون: P, Rathina Kumar, R, Tamilarasi, S, Balaji T, S, Karthik

    المصدر: 2024 Ninth International Conference on Science Technology Engineering and Mathematics (ICONSTEM) Science Technology Engineering and Mathematics (ICONSTEM), 2024 Ninth International Conference on. :1-6 Apr, 2024

    Relation: 2024 Ninth International Conference on Science Technology Engineering and Mathematics (ICONSTEM)

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  8. 8
    مؤتمر
    Comparative Study of Nanowire FET & Internal Gate Nanowire FET

    المؤلفون: Rajyan, Abhinav, Matin, Saini, Gaurav

    المصدر: 2024 2nd International Conference on Device Intelligence, Computing and Communication Technologies (DICCT) Device Intelligence, Computing and Communication Technologies (DICCT), 2024 2nd International Conference on. :1-5 Mar, 2024

    Relation: 2024 2nd International Conference on Device Intelligence, Computing and Communication Technologies (DICCT)

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  9. 9
    مؤتمر
    Analyze and Optimize the Performance of InGaN-Based DG-JL-TFET Through Efficient Design and Investigation

    المؤلفون: R, Tamilarasi, S, Karthik

    المصدر: 2024 International Conference on Distributed Computing and Optimization Techniques (ICDCOT) Distributed Computing and Optimization Techniques (ICDCOT), 2024 International Conference on. :1-6 Mar, 2024

    Relation: 2024 International Conference on Distributed Computing and Optimization Techniques (ICDCOT)

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  10. 10
    مؤتمر
    Performance Analysis of InSb Source-Based Heterojunctionless Nanowire TFET for Low-Power Application: Design and Simulation

    المؤلفون: Anam, Aadil, Amin, S. Intekhab, Prasad, Dinesh

    المصدر: 2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI) Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI), 2024 IEEE International Conference on. 2:1-6 Mar, 2024

    Relation: 2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI)

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