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1دورية أكاديمية
المؤلفون: Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang
المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 2-5 (2021)
مصطلحات موضوعية: GaN, high electron mobility transistor (HEMT), indium–tin–oxide gate electrode, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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2دورية أكاديمية
المؤلفون: Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang
المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 687-690 (2021)
مصطلحات موضوعية: GaN, high electron mobility transistor (HEMT), indium–tin–oxide gate electrode, PBTI, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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3
المؤلفون: Wei-Hung Kuo, Chun-Ta Hsu, Yao-Luen Shen, Chih-Yao Chang, Chih-Fang Huang, Suh-Fang Lin, Tian-Li Wu
المصدر: IEEE Electron Device Letters. 42:144-147
مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Wide-bandgap semiconductor, Substrate (electronics), High-electron-mobility transistor, 01 natural sciences, Flexible electronics, Electronic, Optical and Magnetic Materials, Indium tin oxide, 0103 physical sciences, Electrode, Transmittance, Optoelectronics, Electrical and Electronic Engineering, business, Current density
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4
المؤلفون: Ching-Yao Wang, Wei-Hung Kuo, Chih-Fang Huang, Suh-Fang Lin, Tian-Li Wu, Chih-Yao Chang, Chien-Sheng Wang, Yao-Luen Shen
المصدر: IEEE Journal of the Electron Devices Society. 9:2-5
مصطلحات موضوعية: 010302 applied physics, Materials science, Transistor, Analytical chemistry, 02 engineering and technology, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, 01 natural sciences, Omega, Electronic, Optical and Magnetic Materials, Indium tin oxide, law.invention, law, 0103 physical sciences, Electrode, Gan algan, Electrical and Electronic Engineering, 0210 nano-technology, High electron, Biotechnology, Diode
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5
المؤلفون: Shun-Wei Tang, Yao-Luen Shen, Tian-Li Wu, Suh-Fang Lin, Chih-Yao Chang, Wei-Hung Kuo, Ching-Yao Wang, Chih-Fang Huang
المصدر: IEEE Journal of the Electron Devices Society. 9:687-690
مصطلحات موضوعية: Materials science, Condensed matter physics, Logic gate, Electrode, Breakdown voltage, Trapping, Electrical and Electronic Engineering, Instability, Ohmic contact, Layer (electronics), Electronic, Optical and Magnetic Materials, Biotechnology, Indium tin oxide
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6
المؤلفون: Chih-Yao Chang, Yao-Luen Shen, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Yuh-Renn Wu, Chih-Fang Huang
المصدر: Applied Physics Express. 15:116503
مصطلحات موضوعية: General Engineering, General Physics and Astronomy
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7
المؤلفون: Tian-Li Wu, Suh-Fang Lin, Chih-Yao Chang, Yao-Luen Shen, Kuan-Ju Wu, Wei-Hung Kuo, Chih-Fang Huang
المصدر: DRC
مصطلحات موضوعية: Materials science, Fabrication, business.industry, Transistor, Wide-bandgap semiconductor, High-electron-mobility transistor, law.invention, Switching time, Light intensity, law, Optoelectronics, business, Quantum well, Light-emitting diode
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e799cdce495bace24e5708d5bc0e1c46
https://doi.org/10.1109/drc52342.2021.9467154 -
8
المؤلفون: Yung C. Liang, Chih-Fang Huang, Wei-Hung Kuo, Suh-Fang Lin, Ting-Fu Chang, Ganesh S. Samudra, Tsung-Chieh Hsiao
المصدر: IEEE Transactions on Electron Devices. 62:339-345
مصطلحات موضوعية: Materials science, business.industry, Algan gan, Gallium nitride, Trapping, Electron, Instability, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, Logic gate, Optoelectronics, Electrical and Electronic Engineering, Drain current, business, Saturation (magnetic)
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9
المؤلفون: Yung Hsiang Chen, Rong Xuan, Wei-Hung Kuo, Lurng-Shehng Lee, Ming-Jinn Tsai, Cheng-Tyng Yen, Chien-Chung Hung, Chwan Ying Lee, Suh-Fang Lin
المصدر: ECS Transactions. 52:11-16
مصطلحات موضوعية: Engineering, business.industry, Wide-bandgap semiconductor, Optoelectronics, Power semiconductor device, business
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10
المؤلفون: Chien Chung Hung, Cheng-Tyng Yen, Tzu Kun Ku, Suh Fang Lin, Ming Jinn Tsai, Lurng Shehng Lee, Yung Hsiang Chen, Wei Hung Kuo, Chwan Ying Lee, Rong Xuan
المصدر: Materials Science Forum. :1303-1306
مصطلحات موضوعية: Materials science, business.industry, Mechanical Engineering, Gate leakage current, High-electron-mobility transistor, Condensed Matter Physics, Threshold voltage, Semiconductor, Mechanics of Materials, Performance comparison, MOSFET, Breakdown voltage, Optoelectronics, General Materials Science, Power semiconductor device, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e60c4a885178367cd5a37cab84fb9c76
https://doi.org/10.4028/www.scientific.net/msf.717-720.1303