يعرض 1 - 10 نتائج من 1,351 نتيجة بحث عن '"Sun Weifeng"', وقت الاستعلام: 1.10s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Considerations on the application of in-situ stress measurement and real-time monitoring in deep underground engineering in strong tectonic activity region

    المؤلفون: TAN Chengxuan, ZHANG Peng, WANG Jiming, FENG Chengjun, QI Bangshen, WANG Huiqing, LI Bin, CHEN Qunce, WU Manlu, SUN Weifeng, QIN Xianghui, ZHANG Chongyuan

    المصدر: Dizhi lixue xuebao, Vol 29, Iss 6, Pp 757-769 (2023)

    مصطلحات موضوعية: strong tectonic activity area, cake-shaped core, in-situ stress measurement, real-time monitoring of in-situ stress by piezomagnetic inductance, stress–strain reserved threshold, Geology, QE1-996.5

    وصف الملف: electronic resource

    Relation: https://doaj.org/toc/1006-6616

    URL الوصول: https://doaj.org/article/e9dfa8c0e2ba4927b75078730c0ac019

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  2. 2
    مؤتمر
    SAR Sea Clutter Data Generation Based On Improved Pix2pix Network

    المؤلفون: Sun, Jun, Liu, Genwang, Zhang, Xi, Cao, Chenghui, Sun, Weifeng

    المصدر: IGARSS 2024 - 2024 IEEE International Geoscience and Remote Sensing Symposium Geoscience and Remote Sensing Symposium, IGARSS 2024 - 2024 IEEE International. :7308-7311 Jul, 2024

    Relation: IGARSS 2024 - 2024 IEEE International Geoscience and Remote Sensing Symposium

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  3. 3
    مؤتمر
    A 200V High-Speed Level Shifter for Monolithic GaN IC with Enhanced $\mathrm{d}V_\mathrm{S}/\text{dt}$ Noise Immunity and Negative $V_\mathrm{S}$ Tolerance

    المؤلفون: Zheng, Yifei, Li, Boyu, Dong, Qianheng, Yuan, Weimin, Yang, Songtao, Zhu, Jing, Sun, Weifeng, Zhang, Long, Ma, Jie, Yu, SiYuan, Wang, Denggui, Zhou, Jianjun

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :466-469 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  4. 4
    مؤتمر
    Investigation on the Influences of Affinity Variations of p-NiOx in Ga203 Fin-HJFETs at High Temperatures

    المؤلفون: Li, Mingfei, Li, Sheng, Ma, Yanfeng, Lu, Weihao, Ma, Jie, Ye, Ran, Wei, Jiaxing, Zhang, Long, Liu, Siyang, Sun, Weifeng, Yu, Xinxin, Shen, Rui

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :220-223 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  5. 5
    مؤتمر
    Experiments of A Novel 600V SOI-LIGBT with Parallelly Discrete Cells for Amperage-Class Current Integration

    المؤلفون: He, Nailong, Liu, Teng, Wu, Qiyi, Song, Hua, Mu, Jiangnan, Zhang, Sen, Zhang, Long, Liu, Siyang, Sun, Weifeng

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :434-437 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  6. 6
    مؤتمر
    Improved Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology

    المؤلفون: Ma, Yanfeng, Li, Sheng, Wang, Lixi, Yang, Haoxiang, Lu, Weihao, Li, Mingfei, Ma, Jie, Ye, Ran, Wang, Denggui, Zhou, Jianjun, Wei, Jiaxing, Zhang, Long, Liu, Siyang, Sun, Weifeng

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :1-4 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  7. 7
    مؤتمر
    Global Potential Control Technique Used in Isolation Structure for 1200V HVICs

    المؤلفون: Pan, Chengwu, Ma, Jie, Li, Haoyu, He, Nailong, Wei, Jiaxing, Li, Sheng, Liu, Siyang, Zhang, Sen, Zeng, Dajie, Zhang, Long, Sun, Weifeng

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :406-409 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  8. 8
    مؤتمر
    Layout Concern on Power Devices Based on 0.18μm 200V SOI-BCD Technology for Stable Electrical Characteristics and Reliability

    المؤلفون: Ye, Ran, Bian, Jiaojing, Ma, Shulang, Liu, Siyang, Lu, Li, Xu, Penglong, Xu, Chaoqi, Lin, Feng, Wei, Jiaxing, Ma, Jie, Li, Sheng, Zhang, Long, Sun, Weifeng

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :446-449 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  9. 9
    مؤتمر
    First Demonstration of All-SiC Half-Bridge Gate Driver with High-Side Floating Substrate Region

    المؤلفون: Ma, Jie, Gu, Yong, Hou, Xiangyu, Hong, Jingjing, Ye, Ran, Li, Sheng, Wei, Jiaxing, Liu, Ao, Huang, Runhua, Bai, Song, Zhang, Long, Liu, Siyang, Sun, Weifeng

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :502-505 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  10. 10
    مؤتمر
    Analysis of Leakage Mechanism in Irradiated 4H-SiC INV and NOR Logic Gate Circuits

    المؤلفون: Gu, Yong, Ma, Jie, Wen, Hongyang, Zheng, Guiqiang, Pan, Chengwu, Hou, Xiangyu, Hong, Jingjing, Liu, Ao, Huang, Runhua, Bai, Song, Zhang, Long, Liu, Siyang, Sun, Weifeng

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :116-119 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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