يعرض 1 - 10 نتائج من 72 نتيجة بحث عن '"Sun-Ghil Lee"', وقت الاستعلام: 1.89s تنقيح النتائج
  1. 1
    مؤتمر
    High performance device utilizing ultra-thick-strained-Si (UTSS) grown on relaxed SiGe

    المؤلفون: Sun-Ghil Lee, Young-Pil Kim, Young-Eun Lee, Jong-Wook Lee, Insoo Jung, Deok-Hyung Lee, Yong-Hoon Son, Sung-Kwan Kang, Pilkyu Kang, Min-Gu Kang, Yu Gyun Shin, U-In Chung, Joo Tae Moon

    المصدر: Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. Solid-State Device Research Conference Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European. :309-312 2005

    Relation: Proceedings of ESSDERC 2005. 31st European Solid-State Device Research Conference

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  2. 2
    مؤتمر
    An array cell transistor test structure for the leakage current analysis of stacked capacitor DRAMs with diagonal cell scheme

    المؤلفون: Young Pil Kim, Beom Jun Jin, Gi-Sung Yeo, Sun-Ghil Lee, Siyoung Choi, Uin Chung, Joo Tae Moon, Sang U Kim

    المصدر: Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516) Microelectronic test structures Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on. :139-142 2004

    Relation: Proceedings of the 2004 International Conference on Microelectronic Test Structures

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  3. 3
    مؤتمر
    Qualification method for DRAM retention by leakage current evaluation using subthreshold characteristics of cell transistors

    المؤلفون: Young Pil Kim, Beom Jun Jin, Sun-Ghil Lee, Siyoung Choi, Uin Chung, Joo Tae Moon, Kim, S.U.

    المصدر: 2004 IEEE International Reliability Physics Symposium. Proceedings Reliability physics Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International. :445-448 2004

    Relation: 2004 IEEE International Reliability Physics Symposium. Proceedings

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  4. 4
    مؤتمر
    Front-end-of-line (FEOL) optimization for high-performance, high-reliable strained-Si MOSFETs; from virtual substrate to gate oxidation

    المؤلفون: Jong-Wook Lee, Sun-Ghil Lee, Young-Pil Kimx, Young-Pil Kim, Chul-Sung Kim, Hag-Ju Cho, Seung-Beom Kim, In-Soo Jung, Deok-Hyung Lee, Dong-Chan Kim, Taek-Soo Jeon, Seong-Geon Park, Hong-Bae Park, Yong-Hoon Son, Young-Eun Lee, Beom-Jun Jin, Hye-Lan Lee, Bon-Young Koo, Sang-Bom Kang, Yu Gyun Shin, U-In Chung, Joo-Tae Moon, Byung-Il Ryu

    المصدر: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :1047-1050 2004

    Relation: 2004 International Electron Devices Meeting

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  5. 5
    مؤتمر
    Simulation method and application for the hot carrier-induced device degradation of NMOSFET

    المؤلفون: Sun-Ghil Lee, Jae-Hoon Choi, Sang-Yong Kim, Myung-Hee Nam, Joo-Hyeon Lee, Kang-Bong Seo, Han-Sub Yoon

    المصدر: ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) VLSI and CAD VLSI and CAD, 1999. ICVC '99. 6th International Conference on. :49-52 1999

    Relation: ICVC'99. 6th International Conference on VLSI and CAD

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  6. 6
    مؤتمر
    Fin-channel-array transistor (FCAT) featuring sub-70nm low power and high performance DRAM

    المؤلفون: Lee, D.-H., Lee, B.-C., Jung, I.-S., Taek Jung Kim, Yong-Hoon Son, Sun-Ghil Lee, Young-Pil Kim, Siyoung Choi, U-In Chung, Joo-Tae Moon

    المصدر: IEEE International Electron Devices Meeting 2003 Electron devices IEDM'03 Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International. :17.1.1-17.1.4 2003

    Relation: IEEE International Electron Devices Meeting 2003

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  7. 7
    Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology

    المؤلفون: Seung-Mok Shin, Taiki Uemura, E. S. Jung, Seungbae Lee, Y. Ji, Hyunjo Shin, Joo-Byoung Yoon, H. J. Goo, Yun-Jae Lee, Kyongtaek Lee, Jun-Kyun Park, S. H. Hwang, Jung Hyoung Lee, Jongkyun Kim, G. T. Jeong, Seung-Uk Han, Y. J. Song, K. C. Park, Sun-Ghil Lee, G. H. Koh, B. Y. Seo, Sangwoo Pae, Junhee Lim

    المصدر: IRPS

    مصطلحات موضوعية: 0209 industrial biotechnology, Magnetoresistive random-access memory, 020901 industrial engineering & automation, Product design, Robustness (computer science), Computer science, 02 engineering and technology, Reliability engineering

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f393364e289889248b945cecfaaea618
    https://doi.org/10.1109/irps.2019.8720429

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  8. 8
    A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond

    المؤلفون: Pierre C. Fazan, Romain Ritzenthaler, Johan Albert, Vasile Paraschiv, Wilfried Vandervorst, E. Vecchio, Aftab Nazir, Efrain Altamirano-Sanchez, Geert Schoofs, Nadine Collaert, H.-J. Na, Sun-Ghil Lee, F. Sebai, Thomas Kauerauf, Naoto Horiguchi, Y. Son, Moon Ju Cho, Alexey Milenin, Alessio Spessot, Bastien Douhard, Marc Aoulaiche, K. B. Noh, Aaron Thean, Christian Caillat, Soon Aik Chew, Tom Schram

    المصدر: IEEE Transactions on Electron Devices. 61:2935-2943

    مصطلحات موضوعية: Dynamic random-access memory, Materials science, business.industry, Depletion-load NMOS logic, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Electronic, Optical and Magnetic Materials, law.invention, PMOS logic, CMOS, Stack (abstract data type), law, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Node (circuits), Electrical and Electronic Engineering, business, NMOS logic, Dram, Hardware_LOGICDESIGN

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::68e343e06c7a32bba61fb08b88fa37e4
    https://doi.org/10.1109/ted.2014.2331371

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  9. 9
    A novel tensile Si (n) and compressive SiGe (p) dual-channel CMOS FinFET co-integration scheme for 5nm logic applications and beyond

    المؤلفون: Mark S. Rodder, Mong-song Liang, Cheol Kim, Taek-Soo Jeon, Dong-Won Kim, Sunjung Kim, Kittl Jorge A, Jae Hoo Park, Wookje Kim, Jongwook Jeon, Sun-Ghil Lee, Myung-Geun Song, Kab-Jin Nam, Seung-Hun Lee, Yeon-Cheol Heo, Sean Lian, Sang-Woo Lee, Uihui Kwon, Geum-Jong Bae, Dong-il Bae, Kang-ill Seo, Krishna Kumar Bhuwalka, Ki-Hyun Hwang, Yihwan Kim, E. S. Jung, Jae-Young Park

    المصدر: 2016 IEEE International Electron Devices Meeting (IEDM).

    مصطلحات موضوعية: 010302 applied physics, Electron mobility, Materials science, business.industry, Electrical engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, Silicon-germanium, chemistry.chemical_compound, CMOS, Stack (abstract data type), chemistry, Logic gate, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Common gate, Metal gate

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::10d564c76bd5f4f0442e06af3b149592
    https://doi.org/10.1109/iedm.2016.7838496

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  10. 10
    Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM

    المؤلفون: Myoung-Sook Kim, Soo-jin Hong, Kinam Kim, Jungyub Lee, J. H. Heo, J.W. Lee, S.H. Shin, C.H. Cho, T.Y. Chung, Yong-Seok Kim, D.I. Bae, Sun-Ghil Lee, Jonghyun Oh, Sungho Park

    المصدر: Journal of the Korean Physical Society. 43:887-891

    مصطلحات موضوعية: Materials science, business.industry, law, Transistor, General Physics and Astronomy, Optoelectronics, Data retention, business, Dram, law.invention

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ead5cf03ddb5008990b4e88fdbbd3fa9
    https://doi.org/10.3938/jkps.43.887

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