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المؤلفون: Siddharth Rao, Sebastien Couet, M. Perumkunnil, Francky Catthoor, Gouri Sankar Kar, Arnaud Furnemont, Sushil Sakhare, D. Crotti, Simon Van Beek
المصدر: IEEE Transactions on Electron Devices. 67:3618-3625
مصطلحات موضوعية: 010302 applied physics, Physics, Magnetoresistive random-access memory, Hardware_MEMORYSTRUCTURES, business.industry, Spice, 01 natural sciences, Electronic, Optical and Magnetic Materials, CMOS, 0103 physical sciences, Optoelectronics, Breakdown voltage, Node (circuits), Cache, Static random-access memory, Electrical and Electronic Engineering, business, Energy (signal processing)
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المؤلفون: Nicolas Bueno, Peter Debacker, Sushil Sakhare, Arnaud Furnemont, Gouri Sankar Kar, M. Perumkunnil, Timon Evenblij, Christian Tenllado, Jose I. Gomez-Perez, Francky Catthoor
المصدر: ICCD
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Hardware_MEMORYSTRUCTURES, business.industry, Computer science, 02 engineering and technology, computer.software_genre, 01 natural sciences, 020202 computer hardware & architecture, Embedded system, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Node (circuits), Compiler, Cache, Static random-access memory, Latency (engineering), business, computer
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a9c88269c0de34ef78dd290d6db1385e
https://doi.org/10.1109/iccd46524.2019.00039 -
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المؤلفون: Philippe Matagne, M. Perumkunnil, F. Yasin, Gouri Sankar Kar, Anabela Veloso, Julien Ryckaert, Arnaud Furnemont, Alessio Spessot, Sushil Sakhare, Anda Mocuta, D. Crotti, T. Huynh-Bao
المصدر: DAC
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, business.industry, Computer science, Transistor, 020207 software engineering, 02 engineering and technology, 01 natural sciences, law.invention, Reduction (complexity), CMOS, law, Megabit, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Wafer, business, Computer hardware, Nanosheet
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f7f6b6a7483e16d79ea84304016a40e0
https://doi.org/10.1145/3316781.3317886 -
4Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node
المؤلفون: W. Kim, Arnaud Furnemont, D. Yakimets, Hr. Oh, Alessio Spessot, Siddharth Rao, G. Sankar Kar, T. Huynh Bao, F. Yasin, J. Swerts, Sushil Sakhare, Anda Mocuta, Shreya Kundu, M. Perumkunnil, D. Crotti, Rogier Baert, Sebastien Couet
المصدر: 2018 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Hardware_MEMORYSTRUCTURES, Computer science, business.industry, Crossover, 02 engineering and technology, 021001 nanoscience & nanotechnology, Supercomputer, 01 natural sciences, CMOS, Hardware_GENERAL, Embedded system, 0103 physical sciences, Node (circuits), Cache, Static random-access memory, 0210 nano-technology, business, Design technology
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f521cf3be83341e68098e4a770912037
https://doi.org/10.1109/iedm.2018.8614637 -
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المؤلفون: S. Van Elshocht, Enlong Liu, J. Swerts, S. Van Beek, Sofie Mertens, N. Jossart, Kevin Garello, Thibaut Devolder, W. Kim, Arnaud Furnemont, Siddharth Rao, D. Crotti, Laurent Souriau, Sushil Sakhare, Gouri Sankar Kar, Barry O'Sullivan, F. Yasin, Sebastien Couet, Shreya Kundu
المصدر: 2017 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Barrier layer, Tunnel magnetoresistance, Stack (abstract data type), 0103 physical sciences, Compatibility (mechanics), Perpendicular, Optoelectronics, 0210 nano-technology, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e8d56f2a745c508ae06df63db3cbfa8b
https://doi.org/10.1109/iedm.2017.8268518 -
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المؤلفون: Abdelkarim Mercha, Praveen Raghavan, Kenichi Miyaguchi, Sushil Sakhare
المصدر: IEEE Transactions on Electron Devices. 62:1716-1724
مصطلحات موضوعية: Physics, Hardware_MEMORYSTRUCTURES, business.industry, Electrical engineering, High density, Hardware_PERFORMANCEANDRELIABILITY, Capacitance, Electronic, Optical and Magnetic Materials, Threshold voltage, Logic gate, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Field-effect transistor, Static random-access memory, Electrical and Electronic Engineering, business, Metal gate, Leakage (electronics)
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المؤلفون: Arnaud Furnemont, Trong Huynh Bao, Christian Tenllado, Siddharth Rao, Manu Komalan, Sushil Sakhare, Gouri Sankar Kar, José Ignacio Gómez, Francky Catthoor, Woojin Kim
المصدر: ISCAS
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Engineering, Hardware_MEMORYSTRUCTURES, business.industry, Circuit design, Spin-transfer torque, 02 engineering and technology, Energy consumption, 01 natural sciences, 020202 computer hardware & architecture, Power (physics), Non-volatile memory, Embedded system, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Node (circuits), Static random-access memory, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::75bb49118e11b9cb346bb4567eaf2f4e
https://doi.org/10.1109/iscas.2017.8050923 -
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المؤلفون: T. Huynh-Bao, Sushil Sakhare, Julien Ryckaert, Anda Mocuta, Diederik Verkest, Alessio Spessot
المصدر: ICICDT
مصطلحات موضوعية: Interconnection, Engineering, business.industry, Transistor, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, RC time constant, law.invention, law, Electronic engineering, Node (circuits), Static random-access memory, business, Scaling, Efficient energy use, Communication channel
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9f76ff9a5f52440700c7c5d4068baa8d
https://doi.org/10.1109/icicdt.2017.7993502 -
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المؤلفون: Piet Wambacq, Julien Ryckaert, Aaron Thean, Sushil Sakhare, Abdelkarim Mercha, Trong Huynh-Bao, Diederik Verkest
المساهمون: Capodieci, Luigi, Cain, Jason, Electronics and Informatics, Faculty of Engineering
المصدر: SPIE Proceedings.
مصطلحات موضوعية: Computer science, Extreme ultraviolet lithography, Nanowire, Nanotechnology, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, disruptive transistor, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, 6T-SRAMs, EUVL, Lithography, Electronic circuit, Leakage (electronics), 010302 applied physics, Hardware_MEMORYSTRUCTURES, 5nm technology, standard-cells, vertical GAA FETs, 020202 computer hardware & architecture, lateral GAA FETs, nanowire, Electrode, DTCO, Critical path method, CMOS scaling
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae9044368f19575ff99abb899af5df7e
https://doi.org/10.1117/12.2218361 -
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المؤلفون: Aaron Thean, Diederik Verkest, Abdelkarim Mercha, Julien Ryckaert, Piet Wambacq, Trong Huynh-Bao, Sushil Sakhare, D. Yakimets
المساهمون: Electronics and Informatics, Faculty of Engineering
مصطلحات موضوعية: VT targeting, Nanowire, LFET, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, WTP, law.invention, VFET, law, 0103 physical sciences, Static noise margin, Static random-access memory, Electrical and Electronic Engineering, Electronic circuit, Leakage (electronics), 010302 applied physics, Physics, Hardware_MEMORYSTRUCTURES, business.industry, Transistor, Electrical engineering, 6T-SRAM, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, 5nm, RSNM, CMOS, Logic gate, nanowire, DTCO, Optoelectronics, 0210 nano-technology, business, CMOS scaling, Vmin
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3132db2cbe43cf249b92f32752bc12e4
https://doi.org/10.1109/ted.2015.2504729