يعرض 1 - 10 نتائج من 180 نتيجة بحث عن '"TRAPPING/DETRAPPING"', وقت الاستعلام: 0.90s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Study of Endurance Performance of SiO2 Interfacial Layer Scaling Through O Scavenging in Si Channel n-FeFET With Si:HfO2 Ferroelectric Layer

    المؤلفون: Agarwal, A., Walke, A.M., Ronchi, N., Kao, K., Van Houdt, J.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(8):4619-4625 Aug, 2024

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  2. 2
    مؤتمر
    Optical Probing of Charge Retention Time in Semiconductor/Dielectric Structure

    المؤلفون: Mallick, Binit, Saha, Dipankar, Datta, Anindya, Ganguly, Swaroop

    المصدر: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024

    Relation: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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  3. 3
    دورية أكاديمية
    FIFA: A Fully Invertible FPGA Architecture to Reduce BTI-Induced Aging Effects

    المؤلفون: Mottaghi, M.H., Sedighi, M., Zamani, M.S.

    المصدر: IEEE Transactions on Computers IEEE Trans. Comput. Computers, IEEE Transactions on. 71(9):2277-2286 Sep, 2022

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  4. 4
    دورية أكاديمية
    The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

    المؤلفون: Yang, L., Hou, B., Jia, F., Zhang, M., Wu, M., Niu, X., Lu, H., Shi, C., Mi, M., Zhu, Q., Lu, Y., Ma, X., Hao, Y.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(8):4170-4174 Aug, 2022

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  5. 5
    مؤتمر
    The Variations of Photoluminscence Decay Times Under The Influence of A Trapping State

    المؤلفون: Chiu, K. P.

    المصدر: 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Numerical Simulation of Optoelectronic Devices (NUSOD), 2022 International Conference on. :115-116 Sep, 2022

    Relation: 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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  6. 6
    دورية أكاديمية
    Impact of Vth Instability on Time-Resolved Characteristics of MIS-HEMT-Based GaN Power IC

    المؤلفون: Bi, L., Jiang, Q., Huang, S., Wang, X., Wang, Y., Li, Y., Guo, F., Luan, T., Liu, Y., Fan, J., Yin, H., Wei, K., Zheng, Y., Liu, X.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 42(10):1440-1443 Oct, 2021

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  7. 7
    دورية أكاديمية
    A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and its Implications for Thin-Dielectric MOSFETs

    المؤلفون: Asanovski, R., Palestri, P., Caruso, E., Selmi, L.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 68(10):4826-4833 Oct, 2021

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  8. 8
    مؤتمر
    Study of behavior of p-gate in Power GaN under positive voltage

    المؤلفون: Moschetti, Maurizio, Miccoli, Cristina, Fiorenza, Patrick, Greco, Giuseppe, Roccaforte, Fabrizio, Reina, Santo, Parisi, Antonino, Iucolano, Ferdinando

    المصدر: 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE), 2020 AEIT International Conference of. :1-6 Nov, 2020

    Relation: 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE)

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  9. 9
    دورية أكاديمية
    Characterization of Programmable Charge-Trap Transistors (CTTs) in Standard 28-nm CMOS for Nonvolatile Memory and Analog Arithmetic Applications

    المؤلفون: Du, Y., Du, L., Fan, W., Xiao, Y., Chang, M.F.

    المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits IEEE J. Explor. Solid-State Comput. Devices Circuits Exploratory Solid-State Computational Devices and Circuits, IEEE Journal on. 7(1):10-17 Jun, 2021

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  10. 10
    دورية أكاديمية
    Improved the C–V Curve Shift, Trap State Responsiveness, and Dynamic RON of SBDs by the Composite 2-D–3-D Channel Heterostructure Under the OFF-State Stress

    المؤلفون: Yang, L., Zhang, M., Hou, B., Mi, M., Wu, M., Zhu, Q., Lu, Y., Zhu, J., Zhou, X., Lv, L., Ma, X., Hao, Y.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(11):4808-4812 Nov, 2020

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