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1دورية أكاديمية
المؤلفون: Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Gilles Patriarche, Thierry Leichlé, Simon Gautier, Tarik Moudakir, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden
المصدر: Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2045-2322
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2دورية أكاديمية
المؤلفون: Xin Li, Matthew B. Jordan, Taha Ayari, Suresh Sundaram, Youssef El Gmili, Saiful Alam, Muhbub Alam, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden
المصدر: Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2045-2322
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المؤلفون: Soufiane Karrakchou, Ashutosh Srivastava, Paul L. Voss, Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Adama Mballo, Ali Ahaitouf, Rajat Gujrati, Jean-Paul Salvestrini, Taha Ayari
المساهمون: Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), ANR INMOST, ANR-19-CE08-0025,INMoSt,Cellules solaires multi-jonctions multi-fils à base de nano-pyramides d'InGaN(2019)
المصدر: Gallium Nitride Materials and Devices XVI
Gallium Nitride Materials and Devices XVI, Mar 2021, Online Only, 11686, SPIE, pp.32, 2021, ⟨10.1117/12.2577275⟩مصطلحات موضوعية: Materials science, Fabrication, Hexagonal boron nitride, 02 engineering and technology, 01 natural sciences, law.invention, 010309 optics, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Pre and post, Boron, 3D metrology, business.industry, Adhesion, Measurement devices, 021001 nanoscience & nanotechnology, Light emitting diodes, Sapphire, Heterojunctions, Optoelectronics, Materials processing, 0210 nano-technology, business, Material characterization, Layer (electronics), Light-emitting diode
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2e9ef31dafc81f5e9a722b494eaad77
https://hal.archives-ouvertes.fr/hal-03350537 -
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المؤلفون: Paul L. Voss, Xin Li, Yacine Halfaya, Gilles Patriarche, Abdallah Ougazzaden, Taha Ayari, Jean-Paul Salvestrini, Saiful Alam, Suresh Sundaram
المساهمون: Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Université de Lorraine (UL), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Smith College, Picker Engineering Program, Northampton
المصدر: Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2019, 507, pp.352-356. ⟨10.1016/j.jcrysgro.2018.10.060⟩مصطلحات موضوعية: Diffraction, Materials science, B2. Deep UV LEDs, Cathodoluminescence, 02 engineering and technology, Epitaxy, 01 natural sciences, [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], Inorganic Chemistry, symbols.namesake, B1. Nitrides, 0103 physical sciences, Materials Chemistry, Metalorganic vapour phase epitaxy, 010302 applied physics, B1. h-BN B1. AlGaN MQWs, business.industry, A3. Metalorganic vapor phase epitaxy, B1. 2D materials, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Exfoliation joint, Transmission electron microscopy, Sapphire, symbols, Optoelectronics, van der Waals force, 0210 nano-technology, business
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المؤلفون: Simon Gautier, Soufiane Karrakchou, Ali Ahaitouf, Phuong Vuong, Tarik Moudakir, Gilles Patriarche, Rajat Gujrati, Ashutosh Srivastava, Suresh Sundaram, Thierry Leichle, Taha Ayari, Adama Mballo, Jean-Paul Salvestrini, Paul L. Voss, Abdallah Ougazzaden
المساهمون: Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Équipe Microsystèmes électromécaniques (LAAS-MEMS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, ANR Labex Ganex, ANR Inmost (AAP 2019), ANR-19-CE08-0025,INMoSt,Cellules solaires multi-jonctions multi-fils à base de nano-pyramides d'InGaN(2019), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)
المصدر: Scientific Reports
Scientific Reports, Nature Publishing Group, 2020, 10 (1), pp.211. ⟨10.1038/s41598-020-77681-z⟩
Scientific Reports, 2020, 10 (1), pp.211. ⟨10.1038/s41598-020-77681-z⟩
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)مصطلحات موضوعية: Materials science, Silicon, Science, chemistry.chemical_element, 02 engineering and technology, Dielectric, Epitaxy, Two-dimensional materials, 01 natural sciences, Article, law.invention, symbols.namesake, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Electronic devices, 010302 applied physics, Multidisciplinary, business.industry, 021001 nanoscience & nanotechnology, chemistry, Sapphire, symbols, Medicine, Optoelectronics, Photonics, van der Waals force, 0210 nano-technology, business, Layer (electronics), Light-emitting diode
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المؤلفون: K. Krishnan, N. Y. Sama, Jean-Paul Salvestrini, Phuong Vuong, Gilles Patriarche, Yacine Halfaya, Abdallah Ougazzaden, Paul L. Voss, Simon Gautier, Adama Mballo, Soufiane Karrakchou, Taha Ayari, Suresh Sundaram, Ashutosh Srivastava
المساهمون: Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), ANR Labex Ganex, LUE, KAUST, ANR-15-IDEX-0004,LUE,Isite LUE(2015), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
المصدر: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2020, 116 (4), pp.042101. ⟨10.1063/1.5135505⟩مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Scanning electron microscope, Alloy, Energy-dispersive X-ray spectroscopy, Analytical chemistry, chemistry.chemical_element, Morphology studies, 02 engineering and technology, engineering.material, Epitaxy, 01 natural sciences, [SPI]Engineering Sciences [physics], 0103 physical sciences, Alloys, Metalorganic vapour phase epitaxy, Boron, Wurtzite crystal structure, Energy dispersive X-ray spectroscopy, 010302 applied physics, Optical electronics, 021001 nanoscience & nanotechnology, Secondary ion mass spectroscopy, High resolution X-ray diffraction, chemistry, Transmission electron microscopy, engineering, 0210 nano-technology, Scanning electron microscopy
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المؤلفون: Adama Mballo, Abdallah Ougazzaden, Paul L. Voss, Phuong Vuong, Suresh Sundaram, Yacine Halfaya, Soufiane Karrakchou, Jean-Paul Salvestrini, Chris Bishop, Simon Gautier, Taha Ayari
المساهمون: Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Smith College, Picker Engineering Program, Northampton
المصدر: Advanced Materials Technologies
Advanced Materials Technologies, Wiley, 2019, 4 (10), pp.1970057. ⟨10.1002/admt.201970057⟩مصطلحات موضوعية: Materials science, 02 engineering and technology, Substrate (electronics), Nitride, 010402 general chemistry, 01 natural sciences, Industrial and Manufacturing Engineering, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, law, General Materials Science, Wafer, h-BN, pick-and-place, business.industry, 021001 nanoscience & nanotechnology, III-nitrides, 0104 chemical sciences, Mechanics of Materials, Scalability, Optoelectronics, SMT placement equipment, Sapphire substrate, 0210 nano-technology, business, heterogeneous integration, Light-emitting diode
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المؤلفون: Hafsa Bouhnane, Andrew Hathcock, Dongyuan He, Simon Gautier, Thi Quynh Phuong Vuong, Yacine Halfaya, Adama Mballo, Chris Bishop, Abdallah Ougazzaden, Nossikpendou Yves Sama, Jean Michel Matray, Jean-Paul Salvestrini, Soufiane Karrakchou, Ali Ahaitouf, Taha Ayari
المساهمون: Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Institut Lafayette, Institut Lafayette (Institut Lafayette), PSE-ENV/SEDRE/LETIS, Institut de Radioprotection et de Sûreté Nucléaire (IRSN), Laboratoire Signaux Systèmes et Composants (LSSC), Faculté des sciences (Fès)
المصدر: 2019 IEEE SENSORS
2019 IEEE SENSORS, Oct 2019, MONTRÉAL, Canada. pp.8956762, 2019, 2019 IEEE SENSORS, ⟨10.1109/SENSORS43011.2019.8956762⟩
2019 IEEE SENSORS, Oct 2019, Montreal, France. IEEE, pp.1-4, 2019, ⟨10.1109/SENSORS43011.2019.8956762⟩مصطلحات موضوعية: Materials science, Annealing (metallurgy), 010401 analytical chemistry, Analytical chemistry, Gallium nitride, 02 engineering and technology, High-electron-mobility transistor, Scandium oxide, 021001 nanoscience & nanotechnology, 01 natural sciences, Reference electrode, Capacitance, 0104 chemical sciences, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], chemistry, Standard electrode potential, Thin film, 0210 nano-technology
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb11f9e7f57f00d1bd47e1870f2869e0
https://hal.archives-ouvertes.fr/hal-02870737/document -
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المؤلفون: Walid El Huni, Yacine Halfaya, Houda Ennakrachi, Simon Gautier, Soufiane Karrakchou, Taha Ayari, Ali Ahaitouf, Renaud Puybaret, Matthew B. Jordan, Chris Bishop, Paul L. Voss, Abdallah Ougazzaden, Jean-Paul Salvestrini, Muhammad Arif
المساهمون: Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Signaux Systèmes et Composants (LSSC), Faculté des sciences (Fès), Smith College, Picker Engineering Program, Northampton, IMPACT N4S, ANR-15-IDEX-0004,LUE,Isite LUE(2015)
المصدر: Solar Energy
Solar Energy, Elsevier, 2019, 190, pp.93-103. ⟨10.1016/j.solener.2019.07.090⟩مصطلحات موضوعية: Materials science, Design, 020209 energy, 02 engineering and technology, 7. Clean energy, law.invention, [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], Planar, law, Electric field, Solar cell, 0202 electrical engineering, electronic engineering, information engineering, General Materials Science, Absorption (electromagnetic radiation), Photocurrent, InGaN, Renewable Energy, Sustainability and the Environment, business.industry, Open-circuit voltage, Doping, Semi-polar plane, 021001 nanoscience & nanotechnology, Polarization charges, Optoelectronics, 0210 nano-technology, business, Short circuit, Nanopyramids, Simulation
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المؤلفون: Yacine Halfaya, Taha Ayari, Simon Gautier, Abdallah Ougazzaden, Jean-Paul Salvestrini, Xin Li, Suresh Sundaram, Chris Bishop, Paul L. Voss, Gilles Patriarche, Saiful Alam
المساهمون: Université de Lorraine (UL), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Smith College, Picker Engineering Program, Northampton
المصدر: Advanced Materials Interfaces
Advanced Materials Interfaces, Wiley, 2019, 6 (16), pp.1970102. ⟨10.1002/admi.201970102⟩مصطلحات موضوعية: Materials science, Nanowire, 02 engineering and technology, semiconductors, Nitride, 010402 general chemistry, Epitaxy, 01 natural sciences, flexible electronics, law.invention, [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], chemistry.chemical_compound, symbols.namesake, law, core/shell nanostructures, 2D boron nitride, business.industry, van der Waals epitaxy, Mechanical Engineering, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Semiconductor, chemistry, Mechanics of Materials, Boron nitride, symbols, Optoelectronics, Nanorod, van der Waals force, 0210 nano-technology, business, nanorods, Light-emitting diode
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