نتائج البحث - "Takuji Hosoi"

1

دورية أكاديمية

Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light

المؤلفون: Nguyen Hoai Ngo, Anh Quang Nguyen, Fabian M. Bufler, Yoshinari Kamakura, Hideki Mutoh, Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, Philippe Matagne, Kazuhiro Shimonomura, Kohsei Takehara, Edoardo Charbon, Takeharu Goji Etoh

المصدر: Sensors, Vol 20, Iss 23, p 6895 (2020)

مصطلحات موضوعية: ultra-high-speed, super temporal resolution, temporal resolution limit, image sensor, visible light, SWIR, Chemical technology, TP1-1185

وصف الملف: electronic resource

Relation: https://www.mdpi.com/1424-8220/20/23/6895; https://doaj.org/toc/1424-8220

URL الوصول: https://doaj.org/article/61a41ead702d434a9b9000e4d030a0f5

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2

دورية أكاديمية

Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

المؤلفون: Eigo Fujita, Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

المصدر: AIP Advances, Vol 8, Iss 8, Pp 085305-085305-6 (2018)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/a8dc6f885115459393e62454c9f85419

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3

دورية أكاديمية

Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

المؤلفون: Atthawut Chanthaphan, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

المصدر: AIP Advances, Vol 5, Iss 9, Pp 097134-097134-7 (2015)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/95492c432bc44c91b5c862b3a10f2e55

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4

مؤتمر

Thermal and humidity stability of Ge3N4 thin layers fabricated by high-density plasma nitridation

المؤلفون: Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Akitaka Yoshigoe, Yuden Teraoka, Takayoshi Shimura, Heiji Watanabe

المصدر: 2007 International Semiconductor Device Research Symposium Semiconductor Device Research Symposium, 2007 International. :1-2 Dec, 2007

Relation: 2007 International Semiconductor Device Research Symposium

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5

Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films

المؤلفون: Takayoshi Shimura, Shogo Tanaka, Takuji Hosoi, Heiji Watanabe

المصدر: Journal of Electronic Materials.

مصطلحات موضوعية: Ge, silicon photonics, Materials Chemistry, tensile strain, photoluminescence, Electrical and Electronic Engineering, Condensed Matter Physics, internal stress, Electronic, Optical and Magnetic Materials, electroluminescence

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf0249c954cee8c1159ac5237d68046a
https://hdl.handle.net/11094/90201

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6

Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates

المؤلفون: Takayoshi Shimura, Ryoga Yamaguchi, Naoto Tabuchi, Masato Kondoh, Mizuki Kuniyoshi, Takuji Hosoi, Takuma Kobayashi, Heiji Watanabe

المصدر: Japanese Journal of Applied Physics. 62:SC1083

مصطلحات موضوعية: General Engineering, General Physics and Astronomy

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e456a89ead8a0ddb8ed040a0462bcfb1
https://doi.org/10.35848/1347-4065/acb9a2

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7

Investigation of reliability of NO nitrided SiC(1100) MOS devices

المؤلفون: Takato Nakanuma, Asato Suzuki, Yu Iwakata, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

المصدر: 2022 IEEE International Reliability Physics Symposium (IRPS).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4b62b0401af6411ed0a7d8efde4b3529
https://doi.org/10.1109/irps48227.2022.9764595

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Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors

المؤلفون: Yutaka Terao, Takuji Hosoi, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

المصدر: 2022 IEEE International Reliability Physics Symposium (IRPS).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8fbb01aa5c749211b5f7ae988bf55a88
https://doi.org/10.1109/irps48227.2022.9764433

9

Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement

المؤلفون: Heiji Watanabe, Takuji Hosoi, Hiroshi Yano, Mitsuru Sometani, Takayoshi Shimura, Hironori Takeda

المصدر: Materials Science Forum. 1004:620-626

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::71c956aaca3a80d2641c94b1112e63b1
https://doi.org/10.4028/www.scientific.net/msf.1004.620

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10

Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 0001¯) substrates

المؤلفون: Hidetoshi Mizobata, Kazuki Tomigahara, Mikito Nozaki, Takuma Kobayashi, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

المصدر: Applied Physics Letters. 121:062104

مصطلحات موضوعية: Physics and Astronomy (miscellaneous)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cfa03248218d06a19509647940cb7cf0
https://doi.org/10.1063/5.0095468

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