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1دورية أكاديمية
المؤلفون: Tasneem, N., Islam, M.M., Wang, Z., Zhao, Z., Upadhyay, N., Lombardo, S.F., Chen, H., Hur, J., Triyoso, D., Consiglio, S., Tapily, K., Clark, R., Leusink, G., Kurinec, S., Datta, S., Yu, S., Ni, K., Passlack, M., Chern, W., Khan, A.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(3):1568-1574 Mar, 2022
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2مؤتمر
المؤلفون: Gong, N., Rasch, M.J., Seo, S.-C., Gasasira, A., Solomon, P., Bragaglia, V., Consiglio, S., Higuchi, H., Park, C., Brew, K., Jamison, P., Catano, C., Saraf, I., Athena, F.F., Silvestre, C., Liu, X., Khan, B., Jain, N., Mcdermott, S., Johnson, R., Estrada-Raygoza, I., Li, J., Gokmen, T., Li, N., Pujari, R., Carta, F., Miyazoe, H., Frank, M.M., Koty, D., Yang, Q., Clark, R., Tapily, K., Wajda, C., Mosden, A., Shearer, J., Metz, A., Teehan, S., Saulnier, N., Offrein, B. J., Tsunomura, T., Leusink, G., Narayanan, V., Ando, T.
المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :33.7.1-33.7.4 Dec, 2022
Relation: 2022 IEEE International Electron Devices Meeting (IEDM)
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3دورية أكاديمية
المؤلفون: Tasneem, N., Islam, M.M., Wang, Z., Chen, H., Hur, J., Triyoso, D., Consiglio, S., Tapily, K., Clark, R., Leusink, G., Yu, S., Chern, W., Khan, A.
المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 42(8):1156-1159 Aug, 2021
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4دورية أكاديمية
المؤلفون: Kim, Y., Seo, S., Consiglio, S., Jamison, P., Higuchi, H., Rasch, M., Wu, E.Y., Kong, D., Saraf, I., Catano, C., Muralidhar, R., Nguyen, S., DeVries, S., Van der Straten, O., Sankarapandian, M., Pujari, R.N., Gasasira, A., Mcdermott, S.M., Miyazoe, H., Koty, D., Yang, Q., Yan, H., Clark, R., Tapily, K., Engelmann, S., Robison, R.R., Wajda, C., Mosden, A., Tsunomura, T., Soave, R., Saulnier, N., Haensch, W., Leusink, G., Biolsi, P., Narayanan, V., Ando, T.
المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 42(5):759-762 May, 2021
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5مؤتمر
المؤلفون: Kim, Y., Seo, S.-C., Jamison, P., Consiglio, S., Higuchi, H., Miyazoe, H., Solomon, P., Kim, S., Gokmen, T., Tapily, K., Clark, R. D., Tsunomura, T., Wajda, C. S., Haensch, W., Soave, R., Leusink, G. J., Narayanan, V., Ando, T.
المصدر: 2021 Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2021. :1-2 Jun, 2021
Relation: 2021 Silicon Nanoelectronics Workshop (SNW)
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6مؤتمر
المؤلفون: Triyoso, D. H., Clark, R. D., Weinreich, W., Mart, C., Kampfe, T., Consiglio, S., Mukundan, V., Diebold, A., Tapily, K., Wajda, C., Leusink, G.
المصدر: 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications (VLSI-TSA), 2021 International Symposium on. :1-2 Apr, 2021
Relation: 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
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7مؤتمر
المؤلفون: Lombardo, S., Nelson, C., Chae, K., Reyes-Lillo, S., Tian, M., Tasneem, N., Wang, Z., Hoffmann, M., Triyoso, D., Consiglio, S., Tapily, K., Clark, R., Leusink, G., Cho, K., Kummel, A., Kacher, J., Khan, A.
المصدر: 2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020
Relation: 2020 IEEE Symposium on VLSI Technology
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8دورية أكاديمية
المؤلفون: Ni, K., Sharma, P., Zhang, J., Jerry, M., Smith, J.A., Tapily, K., Clark, R., Mahapatra, S., Datta, S.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(6):2461-2469 Jun, 2018
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9مؤتمر
المؤلفون: Chew, S-A., Yu, H., Schaekers, M., Demuynck, S., Mannaert, G., Kunnen, E., Rosseel, E., Hikavyy, A., Dangol, A., Meyer, K. De, Mocuta, D., Horiguchi, N., Leusink, G., Wajda, C., Hakamata, T., Hasegawa, T., Tapily, K., Clark, R.
المصدر: 2017 IEEE International Interconnect Technology Conference (IITC) Interconnect Technology Conference (IITC), 2017 IEEE International. :1-3 May, 2017
Relation: 2017 IEEE International Interconnect Technology Conference (IITC)
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10مؤتمر
المؤلفون: Loubet, N., Kal, S., Alix, C., Pancharatnam, S., Zhou, H., Durfee, C., Belyansky, M., Haller, N., Watanabe, K., Devarajan, T., Zhang, J., Miao, X., Sankar, M., Breton, M., Chao, R., Greene, A., Yu, L., Frougier, J., Chanemougame, D., Tapily, K., Smith, J., Basker, V., Mosden, A., Biolsi, P., Hurd, T. Q., Divakaruni, R., Haran, B., Bu, H.
المصدر: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :11.4.1-11.4.4 Dec, 2019
Relation: 2019 IEEE International Electron Devices Meeting (IEDM)