يعرض 1 - 10 نتائج من 9,504 نتيجة بحث عن '"The first-principles calculations"', وقت الاستعلام: 0.98s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

    المؤلفون: Wang, G., Peng, B., Yuan, L., Zhang, Y., Jia, R.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(7):4039-4044 Jul, 2024

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  2. 2
    مؤتمر
    Structural and Magnetic Properties of Ultrathin Films Calculated from First-Principles

    المؤلفون: Rychly-Gruszecka, Justyna, Marciniak, Joanna, Snarski-Adamski, Justyn, Meixner, Jakub, Marciniak, Wojciech, Rusz, Jan, Werwinski, Miroslaw

    المصدر: 2024 IEEE International Magnetic Conference - Short papers (INTERMAG Short papers) Magnetic Conference - Short papers (INTERMAG Short papers), 2024 IEEE International. :1-2 May, 2024

    Relation: 2024 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers)

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  3. 3
    دورية أكاديمية
    Systematic Search for Stabilizing Dopants in ZrO₂ and HfO₂ Using First-Principles Calculations

    المؤلفون: Harashima, Y., Koga, H., Ni, Z., Yonehara, T., Katouda, M., Notake, A., Matsui, H., Moriya, T., Si, M.K., Hasunuma, R., Uedono, A., Shigeta, Y.

    المصدر: IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 36(4):543-546 Nov, 2023

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  4. 4
    دورية أكاديمية
    Theoretical Insights Into the Interface Properties of Hydrogen-Terminated and Oxidized Silicon-Terminated Diamond Field-Effect Transistors With h-BeO Gate Dielectric

    المؤلفون: Gui, Q., Yu, W., Cheng, C., Guo, H., Zha, X., Robertson, J., Liu, S., Zhang, Z., Guo, Y.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(11):5550-5556 Nov, 2023

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  5. 5
    دورية أكاديمية
    Experimental and Theoretical Investigation of Cation Site Occupation and Magnetic Ordering in CoFe2O4

    المؤلفون: Mullurkara, S., Fang, Y., Taddei, K.M., Wang, G., Ohodnicki, P.

    المصدر: IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 59(11):1-5 Nov, 2023

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  6. 6
    مؤتمر
    Establishment and Research of a Janus SbBiSi2 Monolayer Structure Model

    المؤلفون: Shi, Xingjie, Zhu, Yutong

    المصدر: 2023 19th International Conference on Natural Computation, Fuzzy Systems and Knowledge Discovery (ICNC-FSKD) Natural Computation, Fuzzy Systems and Knowledge Discovery (ICNC-FSKD), 2023 19th International Conference on. :1-5 Jul, 2023

    Relation: 2023 19th International Conference on Natural Computation, Fuzzy Systems and Knowledge Discovery (ICNC-FSKD)

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  7. 7
    مؤتمر
    Mechanism of Threshold Voltage Instability in SiC MOSFETs and Impacts on Dynamic Switching

    المؤلفون: Jiang, Junsong, Tian, Mohan, Ji, Wen, Hu, Zhihao, Li, Haoran, Guo, Yuzheng, Zhang, Zhaofu, Tang, Xi, Hu, Cungang, Cao, Wenping

    المصدر: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :318-321 May, 2023

    Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  8. 8
    First-principles investigation on the thermodynamic and mechanical properties of Y4Zr3O12 and Y2Ti2O7 oxides in ferritic alloy under helium environment

    المؤلفون: Liu, Ye, Lin, Zunmin, He, Shuang, Zhang, Lin, Chen, Xu, Tan, Qiankun, Gorbatov, Oleg I., Peng, Ping, Qu, Xuanhui

    المصدر: Journal of Materials Research and Technology. 29:1872-1886

    مصطلحات موضوعية: Ferritic alloys, First-principles calculations, Helium, Y2Ti2O7, Y4Zr3O12, Applied Physics, Tillämpad fysik

    وصف الملف: electronic

    URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-104310
    https://doi.org/10.1016/j.jmrt.2024.01.192
    https://ltu.diva-portal.org/smash/get/diva2:1839027/FULLTEXT01.pdf

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  9. 9
    دورية أكاديمية
    Physical Mechanisms Behind the Annealing Temperature Effect on Ferroelectric Phase in HfAlO FTJs by First-Principles Calculations

    المؤلفون: Li, Z., Meng, J., Liu, Y., Yu, J., Wang, T., Xu, K., Zhu, H., Sun, Q., Zhang, D.W., Chen, L.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(10):5107-5112 Oct, 2023

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  10. 10
    دورية أكاديمية
    Microstructure and Wear Resistance of In Situ Synthesized (Ti,V)C Reinforced Nickel Matrix Composite Coatings

    المؤلفون: Sun, Ze, Fu, HanguangAff1, IDs1166502409811x_cor2, Lin, Jian, Zhang, Jiguang, Zong, Bin, Yang, Xiaojun

    المصدر: Journal of Materials Engineering and Performance. :1-15

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