المؤلفون: Feng, X, Li, Y, Wang, L, Chen, S, Yu, ZG, Tan, WC, Macadam, N, Hu, G, Huang, L, Chen, L, Gong, X, Chi, D, Hasan, T, Thean, AVY, Zhang, YW, Ang, KW

مصطلحات موضوعية: ink formulation, printing, artificial synapse, molybdenum disulfide, memristor

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::eea63b1a04ad309a80b0cefbb11c95a3

المؤلفون: Feng, X, Li, Y, Wang, L, Chen, S, Yu, ZG, Tan, WC, Macadam, N, Hu, G, Huang, L, Chen, L, Gong, X, Chi, D, Hasan, T, Thean, AVY, Zhang, YW, Ang, KW

المساهمون: Ang, KW [0000-0003-1919-3351], Apollo - University of Cambridge Repository

مصطلحات موضوعية: ink formulation, printing, artificial synapse, molybdenum disulfide, memristor

وصف الملف: application/vnd.openxmlformats-officedocument.wordprocessingml.document

URL الوصول: https://explore.openaire.eu/search/publication?articleId=od_______109::7ca5486e4bf7b33fcbff2c39e7418c8f
https://www.repository.cam.ac.uk/handle/1810/296288

المؤلفون: WALKE, AM, VANDOOREN, A, ROOYACKERS, R, LEONELLI, D, HIKAVYY, A, LOO, R, VERHULST, AS, KAO, KH, HUYGHEBAERT, C, GROESENEKEN, G, RAO, VR, BHUWALKA, KK, HEYNS, MM, COLLAERT, N, THEAN, AVY

المصدر: IndraStra Global.

مصطلحات موضوعية: Line Tunneling, Gate Length And Width Dependence, Tfet Variability, Performance, Tfet Simulations, Field-Induced Quantum Confinement (Fiqc), Fiqc Effect, Tfet Fabrication, Tunnel Field Effect Transistor (Tfet), Strain

URL الوصول: https://explore.openaire.eu/search/publication?articleId=issn23813652::e94c25fc1e76c08642b820d9bfa6d1d5