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المؤلفون: Miklós Menyhárd, E. Ghegin, S. Favier, János L. Lábár, Philippe Rodriguez, Fabrice Nemouchi, Isabellle Sagnes
المساهمون: STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), MTA EK MFA, Konkoly Thege, Hungary, Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ANR-10-AIRT-0005,NANOELEC,NANOELEC(2010)
المصدر: Journal of Applied Physics
Journal of Applied Physics, 2017, 121, pp.245311. ⟨10.1063/1.4990427⟩
Journal of Applied Physics, American Institute of Physics, 2017, 121, pp.245311. ⟨10.1063/1.4990427⟩مصطلحات موضوعية: In situ, Materials science, Diffusion barrier, Diffusion, Si Photonics, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), In, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, 0103 physical sciences, TiP, Thin film, Ti, 010302 applied physics, Economies of agglomeration, solid state reaction, Metallurgy, InP, 021001 nanoscience & nanotechnology, Ti2In5, Chemical engineering, chemistry, 0210 nano-technology, Layer (electronics), III-V laser, Titanium