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1مؤتمر
المؤلفون: Guenole Jan, Thomas, Luc, Son Le, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, Iwata-Harms, Jodi, Patel, Sahil, Ru-Ying Tong, Serrano-Guisan, Santiago, Dongna Shen, Renren He, Jesmin Haq, Jeffrey Teng, Vinh Lam, Annapragada, Rao, Yu-Jen Wang, Tom Zhong, Torng, Terry, Po-Kang Wang
المصدر: 2016 IEEE Symposium on VLSI Technology VLSI Technology, 2016 IEEE Symposium on. :1-2 Jun, 2016
Relation: 2016 IEEE Symposium on VLSI Technology
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2مؤتمر
المؤلفون: Meng-Chun Shih, Chia-Yu Wang, Yung-Huei Lee, Wayne Wang, Thomas, Luc, Huanlong Liu, Jian Zhu, Yuan-Jen Lee, Guenole Jan, Yu-Jen Wang, Tom Zhong, Torng, Terry, Po-Kang Wang, Derek Lin, Tien-Wei Chiang, Kuei-Hung Shen, Harry Chuang, Gallagher, William J.
المصدر: 2016 IEEE Symposium on VLSI Technology VLSI Technology, 2016 IEEE Symposium on. :1-2 Jun, 2016
Relation: 2016 IEEE Symposium on VLSI Technology
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3
المؤلفون: Luc Thomas, Jesmin Haq, Ru-Ying Tong, Teng Zhongjian, Shen Dongna, Hideaki Fukuzawa, Po-Kang Wang, Guenole Jan, Son Thai Le, Vignesh Sundar, Vinh Lam, Yu-Jen Wang, Jian Zhu, Renren He, Yang Yi, Tom Zhong, Santiago Serrano-Guisan, Paul Y. Liu, Huanlong Liu, Sahil Patel, Yuan-Jen Lee, Jodi Iwata-Harms
المصدر: Scientific Reports, Vol 9, Iss 1, Pp 1-7 (2019)
Scientific Reportsمصطلحات موضوعية: Materials for devices, Materials science, Annealing (metallurgy), lcsh:Medicine, 02 engineering and technology, 01 natural sciences, Article, 0103 physical sciences, Monolayer, lcsh:Science, Anisotropy, 010302 applied physics, Multidisciplinary, business.industry, lcsh:R, Spin-transfer torque, Spintronics, Sputter deposition, 021001 nanoscience & nanotechnology, Non-volatile memory, Ferromagnetism, Optoelectronics, lcsh:Q, 0210 nano-technology, business, Voltage
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4
المؤلفون: Yuan-Jen Lee, Yang Yi, Renren He, Vignesh Sundar, Huanlong Liu, Vinh Lam, Son Thai Le, Jodi Iwata-Harms, Sahil Patel, Shen Dongna, Jesmin Haq, Luc Thomas, Ru-Ying Tong, Santiago Serrano-Guisan, Hideaki Fukuzawa, Tom Zhong, Po-Kang Wang, Guenole Jan, Jeffrey Teng, Yu-Jen Wang, Jian Zhu
المصدر: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
مصطلحات موضوعية: Tunnel magnetoresistance, Magnetoresistive random-access memory, Reliability (semiconductor), Computer science, Reliability study, Cache, Static random-access memory, Write margin, Soft breakdown, Reliability engineering
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::05a8e1d614176fcb08d1a502a7cf363f
https://doi.org/10.1109/vlsi-tsa.2019.8804693 -
5
المؤلفون: Tom Zhong, Santiago Serrano-Guisan, Jesmin Haq, Jodi Iwata-Harms, Guenole Jan, Sahil Patel, Teng Zhongjian, Yuan-Jen Lee, Renren He, Son T. Le, Yang Yi, Paul Liu, Vignesh Sundar, Shen Dongna, Luc Thomas, Ru-Ying Tong, Vinh Lam, Yu-Jen Wang, Jian Zhu, Hideaki Fukuzawa, Po-Kang Wang, Huanlong Liu
المصدر: 2018 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Materials science, Magnetic moment, business.industry, 020208 electrical & electronic engineering, 02 engineering and technology, Nanosecond, 01 natural sciences, Moment (mathematics), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Data retention, business, Layer (electronics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9ecf43055b69484aea50951849f27ca2
https://doi.org/10.1109/iedm.2018.8614700 -
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المؤلفون: Vignesh Sundar, Zhongjian Jeffrey Teng, Yu-Jen Wang, Jian Zhu, Luc Thomas, Ru-Ying Tong, Sahil Patel, Shen Dongna, Vinh Lam, Hideaki Fukuzawa, Yang Yi, Po-Kang Wang, Guenole Jan, Tom Zhong, Jesmin Haq, Son T. Le, Santiago Serrano-Guisan, Renren He, Huanlong Liu, Yuan-Jen Lee, Jodi Iwata-Harms
المصدر: 2018 IEEE Symposium on VLSI Technology.
مصطلحات موضوعية: 010302 applied physics, Very-large-scale integration, Magnetoresistive random-access memory, Ultra low power, business.industry, Computer science, 020208 electrical & electronic engineering, Electrical engineering, Word error rate, Time-dependent gate oxide breakdown, 02 engineering and technology, 01 natural sciences, 0103 physical sciences, Compatibility (mechanics), 0202 electrical engineering, electronic engineering, information engineering, business, Low voltage, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::98a7738f2a2bd93f1ae7e1f1a46263c1
https://doi.org/10.1109/vlsit.2018.8510672 -
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المؤلفون: Luc Thomas, Allen Wang, Yung-Huei Lee, Derek Lin, Po-Kang Wang, Guenole Jan, Harry Chuang, Chang Chih-Yang, Chen Chia-Hsiang, William J. Gallagher, Wayne Wang, Tom Zhong, Jian Zhu, Chih-Hui Weng, Yuan-Jen Lee, Chiang Tien-Wei, Chia-Yu Wang, Kuei-Hung Shen, Huanlong Liu, Meng-Chun Shih
المصدر: 2017 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: 010302 applied physics, 021110 strategic, defence & security studies, Magnetoresistive random-access memory, Materials science, Electromagnet, 0211 other engineering and technologies, Failure rate, 02 engineering and technology, Polarization (waves), Chip, 01 natural sciences, Engineering physics, Magnetic field, law.invention, law, Soldering, 0103 physical sciences, Perpendicular
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8dd9c46601e11efb6958d0b3ed2d3d16
https://doi.org/10.1109/iedm.2017.8268432 -
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المؤلفون: Son T. Le, Santiago Serrano-Guisan, Sahil Patel, Jesmin Haq, Vinh Lam, Shen Dongna, Tom Zhong, Renren He, Yang Yi, Vignesh Sundar, Po-Kang Wang, Guenole Jan, Yu-Jen Wang, Jian Zhu, Huanlong Liu, Paul Liu, Yuan-Jen Lee, Luc Thomas, Ru-Ying Tong, Jodi Iwata-Harms, Teng Zhongjian
المصدر: 2017 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: 010302 applied physics, 0301 basic medicine, Magnetoresistive random-access memory, Materials science, Magnetoresistance, business.industry, Annealing (metallurgy), 01 natural sciences, Process conditions, 03 medical and health sciences, 030104 developmental biology, 0103 physical sciences, Optoelectronics, Torque, business, Anisotropy, Scaling, Size dependence
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::66388db61bc92fbf9fe3e3b6fec8e482
https://doi.org/10.1109/iedm.2017.8268516 -
9
المؤلفون: Vignesh Sundar, Yang Yi, Yu-Jen Wang, Jian Zhu, Vinh Lam, Shen Dongna, Jesmin Haq, Guenole Jan, Tom Zhong, Po-Kang Wang, Son T. Le, Sahil Patel, Renren He, Huanlong Liu, Santiago Serrano-Guisan, Paul Liu, Yuan-Jen Lee, Jodi Iwata-Harms, Luc Thomas, Ru-Ying Tong, Teng Zhongjian
المصدر: 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Random access memory, Hardware_MEMORYSTRUCTURES, Computer science, Working memory, Embedded memory, Ranging, 02 engineering and technology, Parallel computing, 021001 nanoscience & nanotechnology, 01 natural sciences, Computer Science::Hardware Architecture, Hardware_GENERAL, 0103 physical sciences, Cache, Data retention, 0210 nano-technology
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3d01a4980cebeec2fdabeffea6d4b2a1
https://doi.org/10.1109/s3s.2017.8308734 -
10
المؤلفون: Luc Thomas, Harry Chuang, Yuan-Jen Lee, Tom Zhong, Derek Lin, Po-Kang Wang, Yung-Huei Lee, Kuei-Hung Shen, Huanlong Liu, Terry Torng, Yu-Jen Wang, Jian Zhu, Chiang Tien-Wei, Meng-Chun Shih, Chia-Yu Wang, William J. Gallagher, Guenole Jan, Wayne Wang
المصدر: 2016 IEEE Symposium on VLSI Technology.
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, business.industry, Computer science, Automotive industry, Electrical engineering, 02 engineering and technology, Chip, 01 natural sciences, 020202 computer hardware & architecture, Reflow soldering, Microcontroller, Reliability (semiconductor), Embedded system, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Perpendicular, Data retention, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4644b1ae211f5fa1063aa733905d2315
https://doi.org/10.1109/vlsit.2016.7573411