المؤلفون: L.-S. Jeng, Yi-Shao Liu, Ming-Jer Chen, Yang Jing-Hwang, C. K. Yang, Tsui Felix Ying-Kit, Yi-Chun Huang, Tung-Tsun Chen, Jui-Cheng Huang, Chin-Hua Wen, C. H. Hsieh, C.-C. Lin, Sheng-Da Liu

المصدر: 2015 IEEE International Electron Devices Meeting (IEDM).

مصطلحات موضوعية: Hysteresis, Materials science, Signal-to-noise ratio (imaging), CMOS, law, Logic gate, Transistor, Electronic engineering, Biasing, ISFET, Sensitivity (electronics), law.invention

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d74a1c3577c92fce4e22962e46fbc797
https://doi.org/10.1109/iedm.2015.7409792