يعرض 1 - 10 نتائج من 152 نتيجة بحث عن '"Tsung-Yung"', وقت الاستعلام: 1.06s تنقيح النتائج
  1. 1
    مؤتمر
    High-Speed Embedded Memory for AI and High-Performance Compute

    المؤلفون: Wang, Yih, Chen, Yen-Huei, Chih, Y.D., Fujiwara, Hidehiro, Mori, Haruki, Wang, Yu-Jen, Chang, Tsung-Yung Jonathan

    المصدر: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

    Relation: 2023 International Electron Devices Meeting (IEDM)

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  2. 2
    مؤتمر
    15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 1012 Write Endurance and Integrated Margin-Expansion Schemes

    المؤلفون: Lin, Ku-Feng, Noguchi, Hiroki, Shih, Yi-Chun, Yuh, Perng-Fei, Lee, Yuan-Jen, Chang, Tung-Cheng, Huang, Sheng-Po, Lin, Yu-Fan, Lee, Chun-Ying, Huang, Yen-Hsiang, Tsai, Jui-Che, Adham, Saman, Noel, Peter, Yazdi, Ramin, Gershoig, Marat, Shin, YangJae, Joshi, Vineet, Wong, Ted, Jiang, Meng-Ru, Wu, J. J., Cheng, Chun-Tai, Wang, Yu-Jen, Chuang, Harry, Chih, Yu-Der, Wang, Yih, Chang, Tsung-Yung Jonathan

    المصدر: 2024 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2024 IEEE International. 67:292-294 Feb, 2024

    Relation: 2024 IEEE International Solid-State Circuits Conference (ISSCC)

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  3. 3
    مؤتمر
    34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm2 and 3.78Mb/mm2 Fully-Digital Compute-in-Memory Macro Supporting INT12 × INT12 with a Parallel-MAC Architecture and Foundry 6T-SRAM Bit Cell

    المؤلفون: Fujiwara, Hidehiro, Mori, Haruki, Zhao, Wei-Chang, Khare, Kinshuk, Lee, Cheng-En, Peng, Xiaochen, Joshi, Vineet, Chuang, Chao-Kai, Hsu, Shu-Huan, Hashizume, Takeshi, Naganuma, Toshiaki, Tien, Chen-Hung, Liu, Yao-Yi, Lai, Yen-Chien, Lee, Chia-Fu, Chou, Tan-Li, Akarvardar, Kerem, Adham, Saman, Wang, Yih, Chih, Yu-Der, Chen, Yen-Huei, Liao, Hung-Jen, Chang, Tsung-Yung Jonathan

    المصدر: 2024 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2024 IEEE International. 67:572-574 Feb, 2024

    Relation: 2024 IEEE International Solid-State Circuits Conference (ISSCC)

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  4. 4
    مؤتمر
    15.3 A 3nm FinFET 4.3GHz 21.1Mb/mm2 Double-Pumping 1-Read and 1-Write Pseudo-2-Port SRAM with Folded-Bitline Multi-Bank Architecture

    المؤلفون: Haraguchi, Masaru, Fujino, Yorinobu, Yokoyama, Yoshisato, Chang, Ming-Hung, Hsu, Yu-Hao, Cheng, Hong-Chen, Nii, Koji, Wang, Yih, Chang, Tsung-Yung Jonathan

    المصدر: 2024 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2024 IEEE International. 67:280-282 Feb, 2024

    Relation: 2024 IEEE International Solid-State Circuits Conference (ISSCC)

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  5. 5
    مؤتمر
    34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices

    المؤلفون: Wen, Tai-Hao, Hsu, Hung-Hsi, Khwa, Win-San, Huang, Wei-Hsing, Ke, Zhao-En, Chin, Yu-Hsiang, Wen, Hua-Jin, Chang, Yu-Chen, Hsu, Wei-Ting, Lo, Chung-Chuan, Liu, Ren-Shuo, Hsieh, Chih-Cheng, Tang, Kea-Tiong, Teng, Shih-Hsin, Chou, Chung-Cheng, Chih, Yu-Der, Chang, Tsung-Yung Jonathan, Chang, Meng-Fan

    المصدر: 2024 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2024 IEEE International. 67:580-582 Feb, 2024

    Relation: 2024 IEEE International Solid-State Circuits Conference (ISSCC)

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  6. 6
    مؤتمر
    15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm2 Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C

    المؤلفون: Huang, Yi-Cheng, Liu, Shang-Hsuan, Chen, Hsu-Shun, Feng, Hsin-Chang, Li, Chih-Feng, Yang, Chou-Ying, Chang, Wei-Keng, Yang, Chang-Feng, Wu, Chun-Yu, Lin, Yen-Cheng, Yang, Tsung-Tse, Chang, Chih-Yang, Chu, Wen-Ting, Chuang, Harry, Wang, Yih, Chih, Yu-Der, Chang, Tsung-Yung Jonathan

    المصدر: 2024 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2024 IEEE International. 67:288-290 Feb, 2024

    Relation: 2024 IEEE International Solid-State Circuits Conference (ISSCC)

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  7. 7
    مؤتمر
    A 4nm 6163-TOPS/W/b $\mathbf{4790-TOPS/mm^{2}/b}$ SRAM Based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update

    المؤلفون: Mori, Haruki, Zhao, Wei-Chang, Lee, Cheng-En, Lee, Chia-Fu, Hsu, Yu-Hao, Chuang, Chao-Kai, Hashizume, Takeshi, Tung, Hao-Chun, Liu, Yao-Yi, Wu, Shin-Rung, Akarvardar, Kerem, Chou, Tan-Li, Fujiwara, Hidehiro, Wang, Yih, Chih, Yu-Der, Chen, Yen-Huei, Liao, Hung-Jen, Chang, Tsung-Yung Jonathan

    المصدر: 2023 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2023 IEEE International. :132-134 Feb, 2023

    Relation: 2023 IEEE International Solid-State Circuits Conference (ISSCC)

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  8. 8
    مؤتمر
    A 22nm 8Mb STT-MRAM Near-Memory-Computing Macro with 8b-Precision and 46.4-160.1TOPS/W for Edge-AI Devices

    المؤلفون: Chiu, Yen-Cheng, Khwa, Win-San, Li, Chung-Yuan, Hsieh, Fang-Ling, Chien, Yu-An, Lin, Guan-Yi, Chen, Po-Jung, Pan, Tsen-Hsiang, You, De-Qi, Chen, Fang-Yi, Lee, Andrew, Lo, Chung-Chuan, Liu, Ren-Shuo, Hsieh, Chih-Cheng, Tang, Kea-Tiong, Chih, Yu-Der, Chang, Tsung-Yung, Chang, Meng-Fan

    المصدر: 2023 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2023 IEEE International. :496-498 Feb, 2023

    Relation: 2023 IEEE International Solid-State Circuits Conference (ISSCC)

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  9. 9
    مؤتمر
    A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W

    المؤلفون: Huang, Wei-Hsing, Wen, Tai-Hao, Hung, Je-Min, Khwa, Win-San, Lo, Yun-Chen, Jhang, Chuan-Jia, Hsu, Huna-Hsi, Chin, Yu-Hsiana, Chen, Yu-Chiao, Lo, Chuna-Chuan, Liu, Ren-Shuo, Tang, Kea-Tiong, Hsieh, Chih-Cheng, Chih, Yu-Der, Chang, Tsung-Yung, Chang, Meng-Fan

    المصدر: 2023 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2023 IEEE International. :15-17 Feb, 2023

    Relation: 2023 IEEE International Solid-State Circuits Conference (ISSCC)

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  10. 10
    مؤتمر
    33.1 A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity

    المؤلفون: Lee, Po-Hao, Lee, Chia-Fu, Shih, Yi-Chun, Lin, Hon-Jarn, Chang, Yen-An, Lu, Cheng-Han, Chen, Yu-Lin, Lo, Chieh-Pu, Chen, Chung-Chieh, Kuo, Cheng-Hsiung, Chou, Tan-Li, Wang, Chia-Yu, Wu, J. J., Wang, Roger, Chuang, Harry, Wang, Yih, Chih, Yu-Der, Chang, Tsung-Yung Jonathan

    المصدر: 2023 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2023 IEEE International. :494-496 Feb, 2023

    Relation: 2023 IEEE International Solid-State Circuits Conference (ISSCC)

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