يعرض 1 - 10 نتائج من 98 نتيجة بحث عن '"Uejima, K."', وقت الاستعلام: 1.00s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Numerical Simulation on AC Loss in REBCO Stacks and Coils Carrying Non-Sinusoidal Currents

    المؤلفون: Uejima, K., Sun, Y., Miyagi, D., Glowacki, J., Long, N.J., Jiang, Z.

    المصدر: IEEE Transactions on Applied Superconductivity IEEE Trans. Appl. Supercond. Applied Superconductivity, IEEE Transactions on. 34(3):1-6 May, 2024

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  2. 2
    مؤتمر
    Highly Scalable Metal Induced Lateral Crystallization (MILC) Techniques for Vertical Si Channel in Ultra-High (> 300 Layers) 3D Flash Memory

    المؤلفون: Ishihara, N., Shimada, Y., Ochi, T., Seto, S., Matsuo, H., Yamashita, H., Morita, S., Ukishima, M., Uejima, K., Arayashiki, Y., Kajiwara, S., Murayama, A., Nishiyama, K., Sugimae, K., Mori, S., Saito, Y., Shundo, T., Maeda, A., Kamiya, H., Uchiyama, Y., Fujiwara, M., Aiso, F., Sekine, K., Ohtani, N.

    المصدر: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023

    Relation: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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  3. 3
    مؤتمر
    Aggressive design of ultra-shallow junction for near-scaling-limit bulk planar CMOS by using raised source/drain extension structure and carbon co-implantion technology

    المؤلفون: Uejima, K., Yako, K., Yamamoto, T., Ikarashi, N., Shishiguchi, S., Hase, T., Hane, M.

    المصدر: 2010 International Workshop on Junction Technology Extended Abstracts Junction Technology (IWJT), 2010 International Workshop on. :1-6 May, 2010

    Relation: 2010 International Workshop on Junction Technology (IWJT)

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  4. 4
    دورية أكاديمية
    Stabilizing Schemes for the Minority Failure Bits in Ta2O5-Based ReRAM Macro

    المؤلفون: Ueki, M., Hayashi, Y., Furutake, N., Masuzaki, K., Tanabe, A., Narihiro, M., Sunamura, H., Uejima, K., Mitsuiki, A., Takeda, K., Hase, T.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 64(2):419-426 Feb, 2017

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  5. 5
    مؤتمر
    Highly reliable poly-SiGe/amorphous-Si gate CMOS

    المؤلفون: Uejima, K., Yamamoto, T., Mogami, T.

    المصدر: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Electron devices meeting Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International. :445-448 2000

    Relation: International Electron Devices Meeting. Technical Digest. IEDM

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  6. 6
    مؤتمر
    Low-power embedded ReRAM technology for IoT applications

    المؤلفون: Ueki, M., Akeuchi, K. T., Yamamoto, T., Tanabe, A., Ikarashi, N., Saitoh, M., Nagumo, T., Sunamura, H., Narihiro, M., Uejima, K., Masuzaki, K., Furutake, N., Saito, S., Yabe, Y., Mitsuiki, A., Takeda, K., Hase, T., Hayashi, Y.

    المصدر: 2015 Symposium on VLSI Circuits (VLSI Circuits) VLSI Circuits (VLSI Circuits), 2015 Symposium on. :T108-T109 Jun, 2015

    Relation: 2015 Symposium on VLSI Circuits

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  7. 7
    مؤتمر
    Correlation among crystal defects, depletion regions and junction leakage in sub-30-nm gate-length MOSFETs: Direct examinations by electron holography

    المؤلفون: Ikarashi, N., Yako, K., Uejima, K., Yamamoto, T., Ikezawa, T., Hane, M.

    المصدر: 2009 Symposium on VLSI Technology VLSI Technology, 2009 Symposium on. :202-203 Jun, 2009

    Relation: 2009 Symposium on VLSI Technology

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  8. 8
    مؤتمر
    Novel diffusion-less ultra-shallow junction engineering based on millisecond annealing for sub-30 nm gate length planar bulk CMOSFET

    المؤلفون: Uejima, K., Yako, K., Ikarashi, N., Narihiro, M., Tanaka, M., Nagumo, T., Mineji, A., Shishiguchi, S., Hane, M.

    المصدر: Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on. :62-67 May, 2008

    Relation: 2008 International Workshop on Junction Technology (IWJT)

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  9. 9
    مؤتمر
    Pushing Planar Bulk CMOSFET Scaling to its Limit by Ultimately Shallow Diffusion-Less Junction

    المؤلفون: Uejima, K., Yako, K., Ikarashi, N., Narihiro, M., Tanaka, M., Nagumo, T., Mineji, A., Shishiguchi, S., Hane, M.

    المصدر: 2007 IEEE International Electron Devices Meeting Electron Devices Meeting, 2007. IEDM 2007. IEEE International. :151-154 Dec, 2007

    Relation: 2007 IEEE International Electron Devices Meeting

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  10. 10
    مؤتمر
    Highly Efficient Stress Transfer Techniques in Dual Stress Liner CMOS Integration

    المؤلفون: Uejima, K., Nakamura, H., Fukase, T., Mochizuki, S., Sugiyama, S., Hane, M.

    المصدر: 2007 IEEE Symposium on VLSI Technology VLSI Technology, 2007 IEEE Symposium on. :220-221 Jun, 2007

    Relation: 2007 IEEE Symposium on VLSI Technology

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