يعرض 1 - 10 نتائج من 1,069 نتيجة بحث عن '"Urabe, Y."', وقت الاستعلام: 1.47s تنقيح النتائج
  1. 1
    مؤتمر
    Self-aligned metal S/D InP MOSFETs using metallic Ni-InP alloys

    المؤلفون: Kim, S. H., Yokoyama, M., Taoka, N., Iida, R., Lee, S., Nakane, R., Urabe, Y., Miyata, N., Yasuda, T., Yamada, H., Fukuhara, N., Hata, M., Takenaka, M., Takagi, S.

    المصدر: IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials. :1-4 May, 2011

    Relation: 2011 Compound Semiconductor Week (CSW) & 23rd International Conference on Indium Phosphide and Related Materials (IPRM)

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  2. 2
    دورية أكاديمية
    Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

    المؤلفون: Kim, S., Yokoyama, M., Taoka, N., Iida, R., Lee, S.-H., Nakane, R., Urabe, Y., Miyata, N., Yasuda, T., Yamada, H., Fukuhara, N., Hata, M., Takenaka, M., Takagi, S.

    المصدر: IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 12(4):621-628 Jul, 2013

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  3. 3
    دورية أكاديمية
    Examination of exercise load for recovering decreased muscle strength caused by static stretching

    Alternate Title: Examen de la charge d’exercice pour la récupération de la force musculaire réduite via un étirement statique (French)

    المؤلفون: Yamamoto, T., Urabe, Y., Maeda, N.

    المصدر: In Science et Sports October 2020 35(5):e148-e155

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  4. 4
    مؤتمر
    Anti-multipath and anti-jamming modulation/demodulation scheme SR-chirp PSK for high-speed data transmission in dispersive fading channel with interference

    المؤلفون: Takai, H., Urabe, Y., Yamasaki, H.

    المصدر: Proceedings of IEEE Vehicular Technology Conference (VTC) Vehicular technology Vehicular Technology Conference, 1994 IEEE 44th. :1355-1359 vol.2 1994

    Relation: Proceedings of IEEE Vehicular Technology Conference (VTC)

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  5. 5
    دورية أكاديمية
    Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

    المؤلفون: Yokoyama, M., Iida, R., Kim, S., Taoka, N., Urabe, Y., Takagi, H., Yasuda, T., Yamada, H., Fukuhara, N., Hata, M., Sugiyama, M., Nakano, Y., Takenaka, M., Takagi, S.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 32(9):1218-1220 Sep, 2011

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  6. 6
    مؤتمر
    CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding

    المؤلفون: Yokoyama, M., Kim, S. H., Zhang, R., Taoka, N., Urabe, Y., Maeda, T., Takagi, H., Yasuda, T., Yamada, H., Ichikawa, O., Fukuhara, N., Hata, M., Sugiyama, M., Nakano, Y., Takenaka, M., Takagi, S.

    المصدر: 2011 Symposium on VLSI Technology - Digest of Technical Papers VLSI Technology (VLSIT), 2011 Symposium on. :60-61 Jun, 2011

    Relation: 2011 IEEE Symposium on VLSI Technology

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  7. 7
    مؤتمر
    High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering

    المؤلفون: Kim, S. H., Yokoyama, M., Taoka, N., Iida, R., Lee, S., Nakane, R., Urabe, Y., Miyata, N., Yasuda, T., Yamada, H., Fukuhara, N., Hata, M., Takenaka, M., Takagi, S.

    المصدر: 2011 Symposium on VLSI Technology - Digest of Technical Papers VLSI Technology (VLSIT), 2011 Symposium on. :58-59 Jun, 2011

    Relation: 2011 IEEE Symposium on VLSI Technology

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  8. 8
    مؤتمر
    Scalable TaN metal source/drain & gate InGaAs/Ge n/pMOSFETs

    المؤلفون: Maeda, T., Urabe, Y., Itatani, T., Ishii, H., Miyata, N., Yasuda, T., Yamada, H., Hata, M., Yokoyama, M., Takenaka, M., Takagi, S.

    المصدر: 2011 Symposium on VLSI Technology - Digest of Technical Papers VLSI Technology (VLSIT), 2011 Symposium on. :62-63 Jun, 2011

    Relation: 2011 IEEE Symposium on VLSI Technology

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  9. 9
    مؤتمر
    High mobility III–V-on-insulator MOSFETs on Si with ALD-Al2O3 BOX layers

    المؤلفون: Yokoyama, M., Urabe, Y., Yasuda, T., Takagi, H., Ishii, H., Miyata, N., Yamada, H., Fukuhara, N., Hata, M., Sugiyama, M., Nakano, Y., Takenaka, M., Takagi, S.

    المصدر: 2010 Symposium on VLSI Technology VLSI Technology (VLSIT), 2010 Symposium on. :235-236 Jun, 2010

    Relation: 2010 IEEE Symposium on VLSI Technology

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  10. 10
    مؤتمر
    Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding

    المؤلفون: Yokoyama, M., Iida, R., Kim, S. H., Taoka, N., Urabe, Y., Yasuda, T., Takagi, H., Yamada, H., Fukuhara, N., Hata, M., Sugiyama, M., Nakano, Y., Takenaka, M., Takagi, S.

    المصدر: 2010 International Electron Devices Meeting Electron Devices Meeting (IEDM), 2010 IEEE International. :3.1.1-3.1.4 Dec, 2010

    Relation: 2010 IEEE International Electron Devices Meeting (IEDM)

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