المؤلفون: Parabrahma Sastry, P. V. (Putcha Vasudeva), 1922-

المساهمون: Ramachandra Murthy, N. S., 1943-, Tirumalarāvu, Jayadhīr., Andhra Pradesh Government Oriental Manuscripts Library and Research Institute.

مصطلحات موضوعية: Telugu language -- History.

المؤلفون: B. J. O'Sullivan, B. Truijen, V. Putcha, A. Grill, A Chasin, G. Van Den Bosch, B. Kaczer, M. N. K. Alam, J. Van Houdt

المصدر: 2022 IEEE International Reliability Physics Symposium (IRPS).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8c75a28f2ade9ef36adc1e16e00feb98
https://doi.org/10.1109/irps48227.2022.9764588

المؤلفون: V. Putcha, H. Yu, J. Franco, S. Yadav, A. Alian, U. Peralagu, B. Parvais, N. Collaert

المصدر: 2022 IEEE International Reliability Physics Symposium (IRPS).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3bbc16f23320e89280dbbdf5aa82575d
https://doi.org/10.1109/irps48227.2022.9764522

المؤلفون: Parabrahma Sastry, P. V. (Putcha Vasudeva), 1922-

مصطلحات موضوعية: Villages -- India -- Andhra Pradesh -- Case studies., Social structure -- India -- Andhra Pradesh -- Case studies., Case studies.

جغرافية الموضوع: Andhra Pradesh (India) -- Rural conditions -- Case studies., India -- Politics and government -- Case studies.

المؤلفون: Simone Gerardin, Stefano Bonaldo, Dimitri Linten, Robert A. Reed, Ronald D. Schrimpf, Bertrand Parvais, Daniel M. Fleetwood, Simeng E. Zhao, En Xia Zhang, V. Putcha, Alessandro Paccagnella

المساهمون: Electronics and Informatics, Electricity

المصدر: IEEE Transactions on Nuclear Science. 67:1312-1319

مصطلحات موضوعية: Nuclear and High Energy Physics, Materials science, Bias dependence, Gate dielectric, Dielectric, 01 natural sciences, MOSFET, chemistry.chemical_compound, Gate oxide, InP substrate, 0103 physical sciences, high-k dielectric, Electrical and Electronic Engineering, indium gallium arsenide (InGaAs), High-κ dielectric, threshold voltage shift, III V, Condensed matter physics, 010308 nuclear & particles physics, Subthreshold conduction, channel length dependence, total dose effects, Threshold voltage, Nuclear Energy and Engineering, chemistry, Indium gallium arsenide

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3bb9fd83be0c26960cd546327d96c81c
https://doi.org/10.1109/tns.2019.2963340

المؤلفون: Ming-Dou Ker, Guido Groeseneken, Uthayasankaran Peralagu, Nadine Collaert, Shih-Hung Chen, V. Putcha, Bertrand Parvais, Wei-Min Wu, A. Sibaja-Hernandez, Sachin Yadav, Alireza Alian

المصدر: 2021 43rd Annual EOS/ESD Symposium (EOS/ESD).

مصطلحات موضوعية: Electrostatic discharge, Materials science, business.industry, Wide-bandgap semiconductor, Schottky diode, Gallium nitride, Algan gan, High-electron-mobility transistor, chemistry.chemical_compound, chemistry, Logic gate, Optoelectronics, business, 5G

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::900aa84c6eb74d97358618f4cc34a4a2
https://doi.org/10.23919/eos/esd52038.2021.9574716

المؤلفون: Eddy Simoen, A. Oliviera, Anabela Veloso, V. Putcha, Kenichiro Takakura, C. Claeys, Liang He, H. Amimura

المصدر: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

مصطلحات موضوعية: 010302 applied physics, Noise power, Materials science, business.industry, Infrasound, 020208 electrical & electronic engineering, Nanowire, Gate stack, Spectral density, 02 engineering and technology, 01 natural sciences, Stack (abstract data type), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, State (computer science), business, Scaling

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::bfdc11b49df3a0a3c48e3d571fab76d7
https://doi.org/10.1109/edtm50988.2021.9420967

المؤلفون: Marc Heyns, Aaron Thean, Dan Mocuta, Laura Nyns, V. Putcha, Xiang Jiang, Jacopo Franco, Nadine Collaert, Arturo Sibaja Hernandez, Valentina Spampinato, Alexis Franquet, Dimitri Linten, Jerome Mitard, Sonja Sioncke, Fu Tang, Jan Willem Maes, Michael Eugene Givens, Qi Xie, Rita Rooyackers, A. Vais, Sergio Calderon Ardila

المصدر: Advances in Science, Technology and Engineering Systems, Vol 3, Iss 5, Pp 36-44 (2018)

مصطلحات موضوعية: 010302 applied physics, Materials science, InGaAs, Physics and Astronomy (miscellaneous), business.industry, lcsh:T, Electrical engineering, Gate stack, III-V MOSFET, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, lcsh:Technology, High-κ oxides, Development (topology), Management of Technology and Innovation, 0103 physical sciences, III-V reliability, lcsh:Q, 0210 nano-technology, business, III-V passivation, lcsh:Science, Engineering (miscellaneous)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f90282291f65b09e4873a69c32b11c9
https://astesj.com/v03/i05/p06/

المؤلفون: R. Rodriguez, Bertrand Parvais, Uthayasankaran Peralagu, A. Sibaja-Hernandez, Niamh Waldron, Alireza Alian, Piet Wambacq, Nadine Collaert, R. Y. ElKashlan, Ming Zhao, V. Putcha, A. Khaled, Sachin Yadav

المساهمون: Electronics and Informatics, Faculty of Engineering

مصطلحات موضوعية: Materials science, business.industry, Contact resistance, Copper interconnect, Gallium nitride, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, Stack (abstract data type), Logic gate, Materials Chemistry, Optoelectronics, Wafer, Radio frequency, Electrical and Electronic Engineering, business, AND gate

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70eee7c9d7c90b9da8e14d26000936b9
https://biblio.vub.ac.be/vubir/ganonsi-mmwave-rf-devices-integrated-in-a-200mm-cmos-compatible-3level-cu-beol(3fec8ccf-dfd5-47bd-8b10-7ecaf166404f).html

المؤلفون: Uthayasankaran Peralagu, Bertrand Parvais, Po-Chun Brent Hsu, V. Putcha, Eddy Simoen, Nadine Collaert, Niamh Waldron, Ming Zhao, Kenichiro Takakura, Hongyue Wang, Hao Yu

المساهمون: Yu, Shaofeng, Zhu, Xiaona, Tang, Ting-Ao, Physics, Electronics and Informatics

المصدر: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).

مصطلحات موضوعية: Materials science, Deep-level transient spectroscopy, Silicon, business.industry, chemistry.chemical_element, Noise spectroscopy, Gallium nitride, Trap (computing), chemistry.chemical_compound, chemistry, Logic gate, Optoelectronics, Electrical and Electronic Engineering, Spectroscopy, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b48d48fd0653aed31b43fd47df41f3b2
https://doi.org/10.1109/icsict49897.2020.9278262