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المؤلفون: Chih-Hao Chang, V.S. Chang, K.H. Pan, K.T. Lai, J. H. Lu, J.A. Ng, C.Y. Chen, B.F. Wu, C.J. Lin, C.S. Liang, C.P. Tsao, Y.S. Mor, C.T. Li, T.C. Lin, C.H. Hsieh, P.N. Chen, H.H. Hsu, J.H. Chen, H.F. Chen, J.Y. Yeh, M.C. Chiang, C.Y. Lin, J.J. Liaw, C.H. Wang, S.B. Lee, C.C. Chen, H.J. Lin, R. Chen, K.W. Chen, C.O. Chui, Y.C. Yeo, K.B. Huang, T.L. Lee, M.H. Tsai, K.S. Chen, Y.C. Lu, S.M. Jang, S.-Y. Wu
المصدر: 2022 International Electron Devices Meeting (IEDM).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a2d084d0ad2307b58ed946452d990273
https://doi.org/10.1109/iedm45625.2022.10019565 -
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المؤلفون: Shien-Yang Wu, C.H. Chang, M.C. Chiang, C.Y. Lin, J.J. Liaw, J.Y. Cheng, J.Y. Yeh, H.F. Chen, S.Y. Chang, K.T. Lai, M.S. Liang, K.H. Pan, J.H. Chen, V.S. Chang, T.C. Luo, X. Wang, Y.S. Mor, C.I. Lin, S.H. Wang, M.Y. Hsieh, C.Y. Chen, B.F. Wu, C.J. Lin, C.S. Liang, C.P. Tsao, C.T. Li, C.H. Chen, C.H. Hsieh, H.H. Liu, P.N. Chen, C.C. Chen, R. Chen, Y.C. Yeo, C.O. Chui, W. Chang, T.L. Lee, K.B. Huang, H.J. Lin, K.W. Chen, M.H. Tsai, K.S. Chen, X.M. Chen, Y.K. Cheng, C.H. Wang, W. Shue, Y. Ku, S. M. Jang, M. Cao, L.C. Lu, T.S. Chang
المصدر: 2022 International Electron Devices Meeting (IEDM).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a5773761fb38831e5d4c30f3c7d05827
https://doi.org/10.1109/iedm45625.2022.10019498 -
3دورية أكاديمية
لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل. -
4دورية أكاديمية
لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل. -
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المؤلفون: C.Y. Lee, M.C. Chiang, Lin Chih-Yung, Kuei-Shun Chen, V.S. Chang, C.H. Yao, R. Chen, S.M. Jang, R.F. Tsui, C.H. Chang, Y.K. Wu, C.H. Tsai, T. Miyashita, Jhon-Jhy Liaw, Huicheng Chang, Shien-Yang Wu, Joy Cheng, K.H. Pan, Chang-Ta Yang, C. H. Hsieh, Kai-Yuan Ting, Y. Ku
المصدر: 2016 IEEE Symposium on VLSI Technology.
مصطلحات موضوعية: 010302 applied physics, Engineering, Hardware_MEMORYSTRUCTURES, business.industry, Electrical engineering, High density, 020206 networking & telecommunications, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Swing, 01 natural sciences, CMOS, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Static noise margin, Node (circuits), Static random-access memory, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8bc10b7b670a120907e7bb05eea60287
https://doi.org/10.1109/vlsit.2016.7573390 -
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المؤلفون: Serge Biesemans, V.S. Chang, Tom Schram, KaiMin Yin, S. De Gendt, J.W. Maes, Thierry Conard, L.-A. Ragnarsson, Marc Aoulaiche, Hong Yu Yu
المصدر: IEEE Transactions on Electron Devices. 54:2738-2749
مصطلحات موضوعية: Electron mobility, Materials science, Negative-bias temperature instability, business.industry, Electrical engineering, chemistry.chemical_element, Equivalent oxide thickness, Electronic, Optical and Magnetic Materials, Threshold voltage, chemistry, MOSFET, Optoelectronics, Electrical and Electronic Engineering, business, Tin, Metal gate, High-κ dielectric
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المؤلفون: Lars-Ake Ragnarsson, Serge Biesemans, S. Jakschik, Thierry Conard, Christoph Adelmann, Annelies Delabie, Hag–Ju Cho, V.S. Chang, A. Akheyar, S. Van Elshocht, Hong Yu Yu, Tom Schram, T. Hantschel, Philippe Absil
المصدر: IEEE Electron Device Letters. 29:743-745
مصطلحات موضوعية: Materials science, business.industry, Annealing (metallurgy), Stacking, Dielectric, Electronic, Optical and Magnetic Materials, CMOS, Electronic engineering, Optoelectronics, Work function, Electrical and Electronic Engineering, business, Metal gate, Layer (electronics), High-κ dielectric
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المؤلفون: S. De Gendt, V.S. Chang, Stefan Kubicek, Tom Schram, K.M. Yin, L.-A. Ragnarsson, Serge Biesemans, R. Mitsuhashi, C. Adelmann, Hui Yu, K. De Meyer, P. Lehnen, Philippe Absil, S. Van Elshocht, R. Singanamalla, H.-J. Cho, S.Z. Chang
المصدر: IEEE Electron Device Letters. 28:656-658
مصطلحات موضوعية: Electron mobility, Materials science, business.industry, Electrical engineering, Oxide, Equivalent oxide thickness, Electronic, Optical and Magnetic Materials, Threshold voltage, chemistry.chemical_compound, chemistry, MOSFET, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, business, Leakage (electronics), Extrinsic semiconductor
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المؤلفون: Lars-Ake Ragnarsson, Serge Biesemans, J. Swerts, Annelies Delabie, Thierry Conard, V.S. Chang, Kai Min Yin, Hag-Ju Cho, Hong Yu Yu, Tom Schram, S. De Gendt
المصدر: IEEE Electron Device Letters. 28:486-488
مصطلحات موضوعية: Electron mobility, Materials science, Annealing (metallurgy), Inorganic chemistry, Analytical chemistry, chemistry.chemical_element, Equivalent oxide thickness, Electronic, Optical and Magnetic Materials, Hafnium, chemistry.chemical_compound, Atomic layer deposition, chemistry, Work function, Electrical and Electronic Engineering, Tin, Tantalum carbide
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المؤلفون: Christoph Adelmann, Rita Vos, Christoph Kerner, Serge Biesemans, Thomas Witters, Anne Lauwers, Shou-Zen Chang, H.-J. Cho, Marc Aoulaiche, K. De Meyer, Jacob Hooker, Thomas Chiarella, T. Y. Hoffmann, Tom Schram, P. Kelkar, Stephan Brus, Lars-Ake Ragnarsson, Christa Vrancken, A. Akheyar, Thomas Kauerauf, Moonju Cho, Philippe Absil, Stefan Kubicek, F. Sebai, M. Ercken, Annelies Delabie, Y. Okuno, V.S. Chang, R. Mitsuhashi, Vasile Paraschiv, E. Rohr
المصدر: 2008 Symposium on VLSI Technology.
مصطلحات موضوعية: Materials science, business.industry, Time-dependent gate oxide breakdown, Dielectric, STRIPS, law.invention, CMOS, Resist, Etching (microfabrication), law, Logic gate, Electronic engineering, Optoelectronics, business, AND gate
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::107c8a19405aef06510eac7083828b21
https://doi.org/10.1109/vlsit.2008.4588557