المؤلفون: Vandendaele, W., Jaud, M.-A., Viey, A. G., Mohamad, B., Royer, C. Le, Vauche, L., Constant, A., Modica, R., Iucolano, F., Gwoziecki, R.

المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :345-348 May, 2022

Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

المؤلفون: Rrustemi, B., Viey, A. G., Jaud, M.-A., Triozon, F., Vandendaele, W., Leroux, C., Cluzel, J., Martin, S., Le Royer, C., Gwoziecki, R., Modica, R., Iucolano, F., Gaillard, F., Poiroux, T., Ghibaudo, G.

المصدر: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2021 - IEEE 51st European. :295-298 Sep, 2021

Relation: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)

المؤلفون: Jaud, M. -A., Vandendaele, W., Rrustemi, B., Viey, A. G., Martin, S., Le Royer, C., Vauche, L., Martinie, S., Morvan, E., Gwoziecki, R., Modica, R., Iucolano, F., Plissonnier, M., Poiroux, T.

المصدر: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :319-322 May, 2021

Relation: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

المؤلفون: Viey, A. G., Vandendaele, W., Jaud, M.-A., Gerrer, L., Garros, X., Cluzel, J., Martin, S., Krakovinsky, A., Biscarrat, J., Gwoziecki, R., Plissonnier, M., Gaillard, F., Modica, R., Iucolano, F., Meneghini, M., Meneghesso, G., Ghibaudo, G.

المصدر: 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :23.6.1-23.6.4 Dec, 2020

Relation: 2020 IEEE International Electron Devices Meeting (IEDM)

المؤلفون: Vandendaele, W., Martin, S., Jaud, M.-A, Krakovinsky, A., Vauche, L., Le Royer, C., Biscarrat, J., Viey, A. G., Gwoziecki, R., Modica, R., Iucolano, F., Plissonnier, M., Gaillard, F.

المصدر: 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :23.5.1-23.5.4 Dec, 2020

Relation: 2020 IEEE International Electron Devices Meeting (IEDM)

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تسجيل الدخول للوصول الكامل.

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تسجيل الدخول للوصول الكامل.

المؤلفون: Jaud, M. -A., Vandendaele, W., Rrustemi, B., Viey, A. G., Martin, S., Le Royer, C., Vauche, L., Martinie, S., Gwoziecki, R., Modica, R., Iucolano, F., Poiroux, T.

المصدر: IEEE Transactions on Electron Devices; Feb2022, Vol. 69 Issue 2, p669-674, 6p

مصطلحات موضوعية: METAL oxide semiconductor field-effect transistors, THRESHOLD voltage, METAL semiconductor field-effect transistors, MODULATION-doped field-effect transistors, GALLIUM nitride, CONDUCTION bands