المؤلفون: Ancona, M.G., Yu, Z., Dutton, R.W., Vande Voorde, P.J., Cao, M., Vook, D.

المصدر: 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) Simulation of semiconductor processes and devices Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on. :235-238 1999

Relation: Proceedings of International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99

المؤلفون: Kleveland, B., Diaz, C.H., Vook, D., Madden, L., Lee, T.H., Wong, S.S.

المصدر: IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 36(10):1480-1488 Oct, 2001

المؤلفون: Ancona, M.G., Yu, Z., Dutton, R.W., Vande Voorde, P.J., Cao, M., Vook, D.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 47(12):2310-2319 Dec, 2000

المؤلفون: Vook, D., Kamins, T.I., Burton, G., Vande Voorde, P.J., Wang, H.-H., Coen, R., Lin, J., Pettengill, D.F., Yu, P.-K., Rosner, S.J., Turner, J.E., Laderman, S.S., Horng-Sen Fu, Wang, A.S.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 41(6):1013-1018 Jun, 1994

المؤلفون: Chang-Hoon Choi, Jung-Suk Goo, Tae-Young Oh, Zhiping Yu, Dutton, R.W., Bayoumi, A., Min Cao, Voorde, P.V., Vook, D., Diaz, C.H.

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 20(6):292-294 Jun, 1999

المؤلفون: Chang-Hoon Choi, Jung-Suk Goo, Tae-Young Oh, Zhiping Yu, Dutton, R.W., Bayoumi, A., Min Cao, Voorde, P.V., Vook, D.

المصدر: 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) VLSI technology VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on. :63-64 1999

Relation: 1999 Symposium on VLSI Technology. Digest of Technical Papers

المؤلفون: Kleveland, B., Diaz, C.H., Vook, D., Madden, L., Lee, T.H., Wong, S.S.

المصدر: IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 37(2):255-255 Feb, 2002

المؤلفون: Samara, G. A., Vook, D. W., Gibbons, J. F.

المصدر: Journal of Applied Physics; 2/15/1992, Vol. 71 Issue 4, p1807, 8p

مصطلحات موضوعية: CRYSTAL defects, GALLIUM arsenide, COMPOUND semiconductors

المؤلفون: Vook, D. W., Gibbons, J. F.

المصدر: Journal of Applied Physics; 2/15/1990, Vol. 67 Issue 4, p2100, 9p

مصطلحات موضوعية: GALLIUM arsenide, CHEMICAL vapor deposition, MASS spectrometry

المؤلفون: Reynolds, S., Vook, D. W., Gibbons, J. F.

المصدر: Journal of Applied Physics; 2/15/1988, Vol. 63 Issue 4, p1052, 8p, 1 Chart, 14 Graphs

مصطلحات موضوعية: ZINC, GALLIUM arsenide, ORGANOMETALLIC compounds