يعرض 1 - 10 نتائج من 4,240 نتيجة بحث عن '"Wakabayashi H"', وقت الاستعلام: 1.44s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Detection of Flooded Areas Caused by Typhoon Hagibis by Applying a Learning-Based Method Using Sentinel-1 Data

    المؤلفون: Igarashi, T., Wakabayashi, H.

    المصدر: IEEE Journal of Selected Topics in Applied Earth Observations and Remote Sensing IEEE J. Sel. Top. Appl. Earth Observations Remote Sensing Selected Topics in Applied Earth Observations and Remote Sensing, IEEE Journal of. 17:10006-10012 2024

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  2. 2
    دورية أكاديمية
    Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing

    المؤلفون: Kurohara, K., Imai, S., Hamada, T., Tatsumi, T., Tomiya, S., Kakushima, K., Tsutsui, K., Wakabayashi, H.

    المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 12:390-398 2024

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  3. 3
    دورية أكاديمية
    Temporal Muscle Thickness Predicts Mortality and Disability in Older Adults Diagnosed with Mild Dementia

    المؤلفون: Borda, Miguel GermanAff1, Aff2, Aff3, IDjfa202439_cor1, Baldera, J. PatricioAff1, Aff4, Patino-Hernandez, D.Aff2, Aff5, Westman, E.Aff3, Aff6, Pérez-Zepeda, M. U.Aff7, Aff8, Tarazona-Santabalbina, F. J.Aff9, Aff10, Aff11, Wakabayashi, H., Arai, H., Kivipelto, M.Aff3, Aff14, Aff15, Aarsland, D.Aff1, Aff16

    المصدر: The Journal of Frailty & Aging. :1-7

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  4. 4
    دورية أكاديمية
    Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact

    المؤلفون: Kawanago, T., Kajikawa, R., Mizutani, K., Tsai, S., Muneta, I., Hoshii, T., Kakushima, K., Tsutsui, K., Wakabayashi, H.

    المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 11:15-21 2023

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  5. 5
    مؤتمر
    Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

    المؤلفون: Watanabe, M., Shigyo, N., Hoshii, T., Furukawa, K., Kakushima, K., Satoh, K., Matsudai, T., Saraya, T., Takakura, T., Muneta, I., Wakabayashi, H., Nakajima, A., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H., Iwai, H.

    المصدر: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2021 5th IEEE. :1-3 Apr, 2021

    Relation: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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  6. 6
    مؤتمر
    Modeling and Simulation of Si IGBTs

    المؤلفون: Shigyo, N., Watanabe, M., Kakushima, K., Hoshii, T., Furukawa, K., Nakajima, A., Satoh, K., Matsudai, T., Saraya, T., Takakura, T., Itou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H., Iwai, H.

    المصدر: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2020 International Conference o. :129-132 Sep, 2020

    Relation: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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  7. 7
    مؤتمر
    Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance

    المؤلفون: Molina, J., Mimura, T., Nakamura, Y., Shimizu, T., Funakubo, H., Fujiwara, I., Hoshii, T., Ohmi, S., Hori, A., Wakabayashi, H., Tsutsui, K., Kakushima, K.

    المصدر: 2020 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2020 IEEE International. :1-4 May, 2020

    Relation: 2020 IEEE International Memory Workshop (IMW)

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  8. 8
    دورية أكاديمية
    Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

    المؤلفون: Hamada, T., Tomiya, S., Tatsumi, T., Hamada, M., Horiguchi, T., Kakushima, K., Tsutsui, K., Wakabayashi, H.

    المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 9:278-285 2021

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  9. 9
    دورية أكاديمية
    WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

    المؤلفون: Hamada, T., Hamada, M., Igarashi, S., Horiguchi, T., Muneta, I., Kakushima, K., Tsutsui, K., Tatsumi, T., Tomiya, S., Wakabayashi, H.

    المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 9:1117-1124 2021

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  10. 10
    دورية أكاديمية
    Flooded Rice Paddy Detection Using Sentinel-1 and PlanetScope Data: A Case Study of the 2018 Spring Flood in West Java, Indonesia

    المؤلفون: Wakabayashi, H., Hongo, C., Igarashi, T., Asaoka, Y., Tjahjono, B., Permata, I.

    المصدر: IEEE Journal of Selected Topics in Applied Earth Observations and Remote Sensing IEEE J. Sel. Top. Appl. Earth Observations Remote Sensing Selected Topics in Applied Earth Observations and Remote Sensing, IEEE Journal of. 14:6291-6301 2021

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