يعرض 1 - 10 نتائج من 31 نتيجة بحث عن '"Wang, Chengkuan"', وقت الاستعلام: 0.91s تنقيح النتائج
  1. 1
    مؤتمر
    ITO Schottky Diode wth Record fT Beyond 400 GHz: Exploring Thickness Depdendant Film Property and Novel Heterogeneous Design

    المؤلفون: Han, Kaizhen, Wang, Chengkuan, Kang, Yuye, Liu, Long, Zhang, Gong, Chen, Yue, Gong, Xiao

    المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :22.7.1-22.7.4 Dec, 2022

    Relation: 2022 IEEE International Electron Devices Meeting (IEDM)

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  2. 2
    مؤتمر
    Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V)

    المؤلفون: Wang, Chengkuan, Kumar, Annie, Han, Kaizhen, Sun, Chen, Xu, Haiwen, Zhang, Jishen, Kang, Yuye, Kong, Qiwen, Zheng, Zijie, Wang, Yuxuan, Gong, Xiao

    المصدر: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :294-295 Jun, 2022

    Relation: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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  3. 3
    مؤتمر
    Ultra-low Specific Contact Resistivity (3.2×10-10 Ω-cm2) of Ti/Si0.5Ge0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping

    المؤلفون: Xu, Haiwen, Wang, Xinke, Luo, Sheng, Zhang, Jishen, Han, Kaizhen, Sun, Chen, Wang, Chengkuan, Khazaka, Rami, Xie, Qi, Huang, Yi, Zhou, Yi, He, Jiaqing, Liang, Gengchiau, Gong, Xiao

    المصدر: 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021

    Relation: 2021 Symposium on VLSI Technology

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  4. 4
    مؤتمر
    First Demonstration of BEOL-Compatible Ferroelectric TCAM Featuring a-IGZO Fe-TFTs with Large Memory Window of 2.9 V, Scaled Channel Length of 40 nm, and High Endurance of 108 Cycles

    المؤلفون: Sun, Chen, Han, Kaizhen, Samanta, Subhranu, Kong, Qiwen, Zhang, Jishen, Xu, Haiwen, Wang, Xinke, Kumar, Annie, Wang, Chengkuan, Zheng, Zijie, Yin, Xunzhao, Ni, Kai, Gong, Xiao

    المصدر: 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021

    Relation: 2021 Symposium on VLSI Technology

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  5. 5
    مؤتمر
    First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300 μA/μm

    المؤلفون: Han, Kaizhen, Kong, Qiwen, Kang, Yuye, Sun, Chen, Wang, Chengkuan, Zhang, Jishen, Xu, Haiwen, Samanta, Subhranu, Zhou, Jiuren, Wang, Haibo, Thean, Aaron Voon-Yew, Gong, Xiao

    المصدر: 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021

    Relation: 2021 Symposium on VLSI Technology

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  6. 6
    دورية أكاديمية

    لا يتم عرض هذه النتيجة على الضيوف.

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  7. 7
    مؤتمر
    Ultra-Low ρc Extraction for Recessed and Non-Recessed Contacts: Generalized Transmission Line Model

    المؤلفون: Wu, Ying, Xu, Haiwen, Zhang, Jishen, Wang, Chengkuan, Zhou, Zuopu, Wang, Haibo, Gong, Xiao, Yeo, Yee Chia

    المصدر: 2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020

    Relation: 2020 IEEE Symposium on VLSI Technology

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  8. 8
    مؤتمر
    Amorphous IGZO TFTs Featuring Extremely-Scaled Channel Thickness and 38 nm Channel Length: Achieving Record High Gm,max of 125 μS/μm at VDS of 1 V and ION of 350 μA/μm

    المؤلفون: Samanta, Subhranu, Han, Kaizhen, Sun, Chen, Wang, Chengkuan, Thean, Aaron Voon-Yew, Gong, Xiao

    المصدر: 2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020

    Relation: 2020 IEEE Symposium on VLSI Technology

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  9. 9
    مؤتمر
    Surface Ga-Boosted Boron-Doped Si0.5 Ge0.5 using In-Situ CVD Epitaxy: Achieving 1.1 × 1021 cm−3 Active Doping Concentration and 5.7× 10−10 Ω-cm2 Contact Resistivity

    المؤلفون: Xu, Haiwen, Zhang, Jishen, Lima, Lucas P B, Margetis, Joe, Khazaka, Rami, Xie, Qi, Tolle, John, Wang, Chengkuan, Wang, Haibo, Zhou, Zuopu, Kong, Qiwen, Gong, Xiao

    المصدر: 2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020

    Relation: 2020 IEEE Symposium on VLSI Technology

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  10. 10
    مؤتمر
    A Novel Fast-Turn-Around Ladder TLM Methodology with Parasitic Metal Resistance Elimination, and 2×10−10 Ω-cm2Resolution: Theoretical Design and Experimental Demonstration

    المؤلفون: Wu, Ying, Xu, Haiwen, Chua, Lye-Hing, Han, Kaizhen, Zou, Wei, Henry, Todd, Zhang, Jishen, Wang, Chengkuan, Sun, Chen, Gong, Xiao

    المصدر: 2019 Symposium on VLSI Technology VLSI Technology, 2019 Symposium on. :T150-T151 Jun, 2019

    Relation: 2019 Symposium on VLSI Technology

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