يعرض 1 - 10 نتائج من 473 نتيجة بحث عن '"Wang, Maojun"', وقت الاستعلام: 1.11s تنقيح النتائج
  1. 1
    مؤتمر
    Investigation of False Turn-On Behavior of Schottky p-GaN HEMT in Bridge-Leg Circuit over −55 °C - 150 °C Operating Temperature Range

    المؤلفون: Fan, Zetao, Wang, Maojun, Wei, Jin, Song, Jiaojiao, Zhang, Jiaxin, Shen, Bo

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :275-278 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  2. 2
    مؤتمر
    Suppression of Hot-Electron-Induced Dynamic RON Degradation in p-GaN Gate HEMT Using Active Passivation and Virtual Body

    المؤلفون: Yang, Junjie, Yu, Jingjing, Wu, Yanlin, Cui, Jiawei, Yang, Han, Yang, Xuelin, Zhang, Meng, Shen, Bo, Wang, Maojun, Wei, Jin

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :530-533 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  3. 3
    مؤتمر
    Polarization-Assisted Acceptor Ionization in E-Mode GaN p-FET on 650-V E-mode p-GaN Gate HEMT (EPH) Platform

    المؤلفون: Li, Teng, Zhang, Meng, Yu, Jingjing, Cui, Jiawei, Yang, Junjie, Wu, Yanlin, Yang, Han, Zhang, Yamin, Yang, Xuelin, Wang, Maojun, Feng, Shiwei, Shen, Bo, Wei, Jin

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :160-163 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  4. 4
    مؤتمر
    Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective hole Injection

    المؤلفون: Yang, Junjie, Yu, Jingjing, Cui, Jiawei, Li, Teng, Lao, Yunhong, Yang, Xuelin, Shen, Bo, Liu, Xiaosen, Wang, Yan, Zhang, Meng, Wang, Maojun, Wei, Jin

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :287-290 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  5. 5
    مؤتمر
    Design and Development of p-GaN Gate HEMT with Schottky Source Extension for Improved Short-Circuit Reliability

    المؤلفون: Yu, Jingjing, Yang, Junjie, Wu, Yanlin, Li, Teng, Cui, Jiawei, Shen, Bo, Zhang, Meng, Wang, Maojun, Wei, Jin

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :263-266 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  6. 6
    مؤتمر
    Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On-Wafer Devices

    المؤلفون: Lao, Yunhong, Nuo, Muqin, Zheng, Qian, Cui, Jiawei, Yang, Junjie, Liu, Sihang, Shen, Bo, Zhang, Meng, Wang, Maojun, Wei, Jin

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :534-537 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  7. 7
    تقرير
    SE-SGformer: A Self-Explainable Signed Graph Transformer for Link Sign Prediction

    المؤلفون: Li, Lu, Liu, Jiale, Ji, Xingyu, Wang, Maojun, Zhang, Zeyu

    مصطلحات موضوعية: Computer Science - Machine Learning

    URL الوصول: http://arxiv.org/abs/2408.08754

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  8. 8
    تقرير
    Mitigating Degree Bias in Signed Graph Neural Networks

    المؤلفون: He, Fang, Deng, Jinhai, Xue, Ruizhan, Wang, Maojun, Zhang, Zeyu

    مصطلحات موضوعية: Computer Science - Machine Learning

    URL الوصول: http://arxiv.org/abs/2408.08508

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  9. 9
    مؤتمر
    6500-V E-mode Active-Passivation p-GaN Gate HEMT with Ultralow Dynamic RON

    المؤلفون: Cui, Jiawei, Wei, Jin, Wang, Maojun, Wu, Yanlin, Yang, Junjie, Li, Teng, Yu, Jingjing, Yang, Han, Yang, Xuelin, Wang, Jinyan, Liu, Xiaosen, Ueda, Daisuke, Shen, Bo

    المصدر: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

    Relation: 2023 International Electron Devices Meeting (IEDM)

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  10. 10
    مؤتمر
    Simultaneously Achieving Large Gate Swing and Enhanced Threshold Voltage Stability in Metal/Insulator/n-GaN Gate HEMT

    المؤلفون: Yang, Junjie, Wei, Jin, Wang, Maojun, Li, Teng, Yu, Jingjing, Yang, Xuelin, Wang, Jinyan, Hao, Yilong, Shen, Bo

    المصدر: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

    Relation: 2023 International Electron Devices Meeting (IEDM)

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