نتائج البحث - "Wen-Jer Tsai"

المصدر: 2008 IEEE International Reliability Physics Symposium Reliability Physics Symposium, 2008. IRPS 2008. IEEE International. :697-698 Apr, 2008

Relation: 2008 IEEE International Reliability Physics Symposium (IRPS)

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دورية أكاديمية

A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell

المؤلفون: Chih-Chieh Yeh, Tahui Wang, Wen-Jer Tsai, Tao-Cheng Lu, Yi-Ying Liao, Hung-Yueh Chen, Nian-Kai Zous, Wenchi Ting, Ku, J., Chih-Yuan Lu

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 25(9):643-645 Sep, 2004

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Investigation of Vth Distribution Tails of Ground-Select-Line Cells and Edge Dummy Cells in a 3-D NAND Flash Memory

المؤلفون: Tahui Wang, S. H. Ku, Wen-Jer Tsai, Chun-Yuan Lu, G. W. Wu, Kuang-Chao Chen, C. C. Cheng, Tao-Cheng Lu, You-Liang Chou, Wen Chang, Chih-Yuan Lu

المصدر: IEEE Transactions on Electron Devices. 68:2260-2264

مصطلحات موضوعية: 010302 applied physics, Physics, Silicon, NAND gate, chemistry.chemical_element, 01 natural sciences, Electronic, Optical and Magnetic Materials, Threshold voltage, Ion, chemistry, 0103 physical sciences, Grain boundary, Electric potential, Electrical and Electronic Engineering, Atomic physics, Energy (signal processing), Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5ccd15d91ec04dea4d97690b3bf9b713
https://doi.org/10.1109/ted.2021.3063215

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Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on ${V}_{{t}}$ Retention Loss in a Multilevel Charge Trap Flash Memory

المؤلفون: Kuang-Chao Chen, Ting-Chien Zhan, Chih-Yuan Lu, Wen-Jer Tsai, Tao-Cheng Lu, Yu-Heng Liu, Tahui Wang

المصدر: IEEE Transactions on Electron Devices. 66:5155-5161

مصطلحات موضوعية: 010302 applied physics, Physics, Charge (physics), Electron, 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Silicon nitride, chemistry, 0103 physical sciences, Charge trap flash, Electrical and Electronic Engineering, Data patterns, Atomic physics, Hot electron, Quantum tunnelling, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ed02028d1af8b1699637d56802cf0bdb
https://doi.org/10.1109/ted.2019.2949251

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Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell String

المؤلفون: Chih-Yuan Lu, S. W. Hwang, C. C. Cheng, T.C. Lu, S. H. Ku, Wen-Jer Tsai, Kuang-Chao Chen, Wei-Liang Lin, Lenvis Liu, Tseung-Yuen Tseng

المصدر: IEEE Transactions on Electron Devices. 66:1734-1740

مصطلحات موضوعية: 010302 applied physics, Physics, Silicon, Time constant, NAND gate, chemistry.chemical_element, Trapping, engineering.material, 01 natural sciences, Molecular physics, Electronic, Optical and Magnetic Materials, Non-volatile memory, Polycrystalline silicon, chemistry, Logic gate, 0103 physical sciences, engineering, Grain boundary, Electrical and Electronic Engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e1e1db0e754cb017ef34f9c19b4178fa
https://doi.org/10.1109/ted.2019.2900736

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Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory

المؤلفون: Tao-Cheng Lu, Wei-Chun Chen, Yu-Heng Liu, Wen-Jer Tsai, Tahui Wang, Cheng-Min Jiang, Kuang-Chao Chen, Chih-Yuan Lu

المصدر: IEEE Electron Device Letters. 38:48-51

مصطلحات موضوعية: 010302 applied physics, Condensed matter physics, Chemistry, Analytical chemistry, 02 engineering and technology, Electron, Nitride, 021001 nanoscience & nanotechnology, 01 natural sciences, Flash memory, Electronic, Optical and Magnetic Materials, Threshold voltage, Electric field, 0103 physical sciences, Electrical and Electronic Engineering, 0210 nano-technology, Quantum tunnelling, Voltage, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f868dcbdcdc83acd2841a3bfc738d652
https://doi.org/10.1109/led.2016.2633545

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