المؤلفون: Shcherbakov, D., Stepanov, P., Memaran, S., Wang, Y., Xin, Y., Yang, J., Wei, K., Baumbach, R., Zheng, W., Watanabe, K., Taniguchi, T., Bockrath, M., Smirnov, D., Siegrist, T., Windl, W., Balicas, L., Lau, C. N.

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Condensed Matter - Strongly Correlated Electrons

URL الوصول: http://arxiv.org/abs/2012.00937

المؤلفون: Tao Liang, Windl, W., Lopatin, S., Duscher, G.

المصدر: International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Simulation of semiconductor processes and devices Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. International Conference on. :143-146 2003

Relation: IEEE International Conference on Simulation of Semiconductor Processes and Devices

المؤلفون: Windl, W.

المصدر: International Conference on Simulation of Semiconductor Processes and Devices Simulation of semiconductor processes Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on. :83-86 2002

Relation: 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002)

المؤلفون: Windl, W., Laudon, M., Carlson, N.N., Daw, M.S.

المصدر: Computing in Science & Engineering Comput. Sci. Eng. Computing in Science & Engineering. 3(4):92-95 Aug, 2001

المؤلفون: Ko, Dongkyun, Zhao, X. W., Reddy, Kongara M., Restrepo, O. D., Mishra, R., Beloborodov, I. S., Trivedi, Nandini, Padture, Nitin P., Windl, W., Yang, F. Y., Johnston-Halperin, E.

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science

URL الوصول: http://arxiv.org/abs/1106.4492

المؤلفون: Smith, T.M., Esser, B.D., Antolin, N., Viswanathan, G.B., Hanlon, T., Wessman, A., Mourer, D., Windl, W., McComb, D.W., Mills, M.J.

المصدر: In Acta Materialia November 2015 100:19-31

المؤلفون: Martinez-Limia, A.^Aff2, Steen, C.^Aff3, Pichler, P.^{Aff2, Aff3}, Gupta, N.^Aff4, Windl, W.^Aff4, Paul, S.^Aff5, Lerch, W.^Aff5

المساهمون: Grasser, Tibor, editor^Aff1, Selberherr, Siegfried, editor^Aff1

المصدر: Simulation of Semiconductor Processes and Devices 2007 : SISPAD 2007. :13-16

المؤلفون: Heinen, R., Hackl, K., Windl, W., Wagner, M.F.-X.

المصدر: In Acta Materialia 2009 57(13):3856-3867

المؤلفون: Wagner, M.F.-X., Windl, W.

المصدر: In Acta Materialia 2008 56(20):6232-6245

المؤلفون: Stoddard, N., Duscher, G., Windl, W., Rozgonyi, G.

المصدر: Journal of Materials Science. July 2005 40(14):3639-3650