يعرض 1 - 10 نتائج من 31 نتيجة بحث عن '"Wonshik Lee"', وقت الاستعلام: 1.01s تنقيح النتائج
  1. 1
    مؤتمر
    New process damage during the etching of small-contact on long floating conductor layer

    المؤلفون: Jinkee Choi, Donggun Park, Hongjoon Moon, Sanghyok Lee, Hyeongchan Ko, Kihoon Yang, Wonshik Lee

    المصدر: 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. Reliability physics symposium Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International. :303-306 2003

    Relation: International Reliability Physics Symposium

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  2. 2
    مؤتمر
    The electrical characteristics analysis of SiO/sub x/N/sub y/ ARC for sub-0.17/sup /spl middot// /spl middot/Gigabit DRAM

    المؤلفون: Chi-Hoon Lee, Nak-Jin Son, Sun-Cheol Hong, Seung-Moo Lee, Dong-Gun Park, Won-Hee Jang, Tae-Hyun An, Wonshik Lee

    المصدر: 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) Semiconductor device research Semiconductor Device Research Symposium, 2001 International. :38-41 2001

    Relation: 2001 International Semiconductor Device Research Symposium. Symposium Proceedings

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  3. 3
    مؤتمر
    Stress-induced leakage current comparison of giga-bit scale DRAM capacitors with OCS (one-cylinder-storage) node

    المؤلفون: Donggun Park, Hyodong Ban, Semin Jung, Hungmo Yang, Wonshik Lee

    المصدر: 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Integrated reliability workshop Integrated Reliability Workshop Final Report, 2000 IEEE International. :116-119 2000

    Relation: 2000 IEEE International Integrated Reliability Workshop Final Report

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  4. 4
    مؤتمر
    Effects of RTA and WSi/sub x/-polycide gate processes on MOSFET reliability for giga-bit scale DRAMs

    المؤلفون: Donggun Park, Nak-Jin Son, Ji-Young Kim, Wonshik Lee

    المصدر: 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Integrated reliability workshop Integrated Reliability Workshop Final Report, 2000 IEEE International. :125-128 2000

    Relation: 2000 IEEE International Integrated Reliability Workshop Final Report

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  5. 5
    مؤتمر
    New charge trapping phenomena in Recessed-Channel-Array-Transistor (RCAT) after Fowler-Nordheim stress

    المؤلفون: Sung-Young Lee, Park, Se Geun, Samjin Hwang, Jaeeun Jeon, Wonshik Lee

    المصدر: 2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on. :9-12 Jun, 2008

    Relation: 2008 IEEE International Conference on IC Design and Technology & Tutorial (ICICDT)

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  6. 6
    مؤتمر
    A Novel Low Leakage Current VPT(Vertical Pillar Transistor) Integration for 4F2 DRAM Cell Array with sub 40 nm Technology

    المؤلفون: Jae-Man Yoon, Kangyoon Lee, Seung-Bae Park, Seong-Goo Kim, Hyoung-Won Seo, Young-Woong Son, Bong-Soo Kim, Hyun-Woo Chung, Choong-Ho Lee, Won-Sok Lee, Dong-Chan Kim, Donggun Park, Wonshik Lee, Byung-Il Ryu

    المصدر: 2006 64th Device Research Conference Device Research Conference, 2006 64th. :259-260 Jun, 2006

    Relation: 2006 64th Device Research Conference

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  7. 7
    Investigation of Hump Degradation by F-N stress for Narrow Width n-MOSFETs with Shallow Trench Isolation (STI)

    المؤلفون: Jae-Eun Jeon, Jae Yong Seo, Hyun-Jung Kim, Sang-keun Lee, Wonshik Lee, Jeong-Eun Seok, Yeong-Geun Kim

    المصدر: ECS Transactions. 8:71-75

    مصطلحات موضوعية: Stress (mechanics), Materials science, Shallow trench isolation, Degradation (geology), Composite material

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e8a32ad258b10bc183b1319942ac468e
    https://doi.org/10.1149/1.2767289

    View this record from the Institute of Physics
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  8. 8
    Electrical reliability of highly reliable 256M-bit mobile DRAM with top-edge round STI and dual gate oxide

    المؤلفون: Wonshik Lee, Donggun Park, Hyeong Joon Kim, Chihoon Lee

    المصدر: Microelectronics Reliability. 43:735-739

    مصطلحات موضوعية: Dynamic random-access memory, Materials science, business.industry, Transistor, Electrical engineering, Oxide, Time-dependent gate oxide breakdown, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, Threshold voltage, chemistry.chemical_compound, chemistry, law, Gate oxide, Saturation current, Shallow trench isolation, Optoelectronics, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c6cfba95f1ad1ff6d80fec6420443d72
    https://doi.org/10.1016/s0026-2714(03)00036-2

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  9. 9
    Deep Submicron CMOS Technology Using Top-Edge Round STI and Dual Gate Oxide for Low Power 256 M-Bit Mobile DRAM

    المؤلفون: Hyeong Joon Kim, Namhyuk Jo, Donggun Park, Wonshik Lee, Chihoon Lee, Chanseong Hwang

    المصدر: Japanese Journal of Applied Physics. 42:1892-1896

    مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), business.industry, Transistor, General Engineering, Oxide, General Physics and Astronomy, Time-dependent gate oxide breakdown, law.invention, Threshold voltage, chemistry.chemical_compound, chemistry, Gate oxide, law, Shallow trench isolation, MOSFET, Optoelectronics, Field-effect transistor, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::89f960b667cf25a5593e042189c5ada4
    https://doi.org/10.1143/jjap.42.1892

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  10. 10
    Arsenic penetration behavior and electrical characteristics of As-doped n+ polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films on Si (100) substrate

    المؤلفون: Wonshik Lee, Hyeong Joon Kim, Chihoon Lee, Jaehoo Park, Moonju Cho, Cheol Seong Hwang, Jihoon Choi, Jaehack Jeong

    المصدر: Applied Physics Letters. 83:1403-1405

    مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Silicon, business.industry, Doping, Gate dielectric, chemistry.chemical_element, engineering.material, Amorphous solid, law.invention, Capacitor, Polycrystalline silicon, chemistry, law, engineering, Optoelectronics, business, Current density, High-κ dielectric

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::73e22af1dc9de25b91159939a9308278
    https://doi.org/10.1063/1.1602168

    Find this article in full text from Scitation.
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