نتائج البحث - "Wookje Kim"

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دورية أكاديمية

A unique dual-poly gate technology for 1.2-V mobile DRAM with simple in situ n/sup +/-doped polysilicon

المؤلفون: Nak-Jin Son, Yongchul Oh, Wookje Kim, Jang, S.-M., Wouns Yang, Gyoyoung Jin, Donggun Park, Kinam Kim

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 51(10):1644-1652 Oct, 2004

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مؤتمر

Drain leakage fluctuation reduction in the recessed channel array transistor DRAM with the elevated source-drain

المؤلفون: Wookje Kim, Satoru Yamada, Sang-Yeon Han, Chang-Hoon Jeon, Shin-Deuk Kim, Siok Sohn, Nak-Jin Son, Jung-Su Park, Wouns Yang, Young-Pil Kim, Won-Seok Lee, Donggun Park, Byung-il Ryu

المصدر: 2006 European Solid-State Device Research Conference Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European. :254-257 Sep, 2006

Relation: 2006 European Solid-State Device Research Conference

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مؤتمر

Novel stress-memorization-technology (SMT) for high electron mobility enhancement of gate last high-k/metal gate devices

المصدر: 2010 International Electron Devices Meeting Electron Devices Meeting (IEDM), 2010 IEEE International. :10.1.1-10.1.4 Dec, 2010

Relation: 2010 IEEE International Electron Devices Meeting (IEDM)

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A novel tensile Si (n) and compressive SiGe (p) dual-channel CMOS FinFET co-integration scheme for 5nm logic applications and beyond

المصدر: 2016 IEEE International Electron Devices Meeting (IEDM).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::10d564c76bd5f4f0442e06af3b149592
https://doi.org/10.1109/iedm.2016.7838496

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A Unique Dual-Poly Gate Technology for 1.2-V Mobile DRAM with Simple In situ n$^+$-Doped Polysilicon

المؤلفون: Donggun Park, Wouns Yang, Gyo-Young Jin, Nak-Jin Son, Wookje Kim, Yong-chul Oh, Sungho Jang, Kinam Kim

المصدر: IEEE Transactions on Electron Devices. 51:1644-1652

مصطلحات موضوعية: Dynamic random-access memory, Materials science, business.industry, Doping, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Integrated circuit, Electronic, Optical and Magnetic Materials, law.invention, Ion implantation, Gate oxide, law, MOSFET, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Electrical and Electronic Engineering, business, Dram, High-κ dielectric

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::97374d2b41958be0e1c1d756324aae02
https://doi.org/10.1109/ted.2004.835162

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OXIDATION AND ANNEALING EFFECT ON COBALT FILMS ON PALLADIUM(111)

المؤلفون: Wookje Kim, Shinyoung Oh, Tschang-Uh Nahm

المصدر: Surface Review and Letters. :931-936

مصطلحات موضوعية: Materials science, Kerr effect, Ferromagnetic material properties, Annealing (metallurgy), Photoemission spectroscopy, chemistry.chemical_element, Surfaces and Interfaces, Condensed Matter Physics, Oxygen, Surfaces, Coatings and Films, Nuclear magnetic resonance, chemistry, Materials Chemistry, Physical chemistry, Single crystal, Cobalt, Palladium

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1370ba0840fcd9f105320622901a7f2e
https://doi.org/10.1142/s0218625x02003238

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Geometric and magnetic properties of Co/Pd system

المؤلفون: Jae-Hoon Park, Jae-Young Kim, Shinyoung Oh, Hyoungjae Kim, Bum Ho Choi, Hoon Koh, Wookje Kim, Wondong Kim

المصدر: Applied Surface Science. :127-133

مصطلحات موضوعية: Diffraction, Kerr effect, Magnetic circular dichroism, Chemistry, General Physics and Astronomy, Surfaces and Interfaces, General Chemistry, Substrate (electronics), Dichroism, Condensed Matter Physics, Molecular physics, Surfaces, Coatings and Films, Condensed Matter::Materials Science, Magnetization, Crystallography, Magnetic anisotropy, Thin film

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::26512ca63a3da17a8332406bf2388bc1
https://doi.org/10.1016/s0169-4332(00)00735-2

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Formation of a bilayer ordered surface alloy Mn/Ag(001)

المؤلفون: Wookje Kim, Soon Cheol Hong, Jae-Duck Kim, Shinyoung Oh, H. G. Min, Wondong Kim, Jikeun Seo

المصدر: Physical Review B. 57:8823-8826

مصطلحات موضوعية: Surface (mathematics), Crystallography, Materials science, Electron diffraction, Condensed matter physics, Magnetic moment, Bilayer, Alloy, Ab initio, engineering, Thin film, engineering.material, Spectral line

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4d87b9594d87a2018b4ca3737d68a392
https://doi.org/10.1103/physrevb.57.8823

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Novel stress-memorization-technology (SMT) for high electron mobility enhancement of gate last high-k/metal gate devices

المصدر: 2010 International Electron Devices Meeting.

مصطلحات موضوعية: Stress (mechanics), Materials science, business.industry, Logic gate, Electrical engineering, Optoelectronics, D region, Dislocation, business, Metal gate, High electron, High-κ dielectric, Communication channel

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::02e6b4230fa3503bbb1506cff204de55
https://doi.org/10.1109/iedm.2010.5703332

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A Novel Body Effect Reduction Technique to Recessed Channel Transistor Featuring Partially Insulating Layer Under Source and Drain : Application to Sub-50nm DRAM Cell

المؤلفون: Jong-Man Park, Donggun Park, Wouns Yang, Yong-seok Lee, Chang-Hoon Jeon, Wookje Kim, Sangyeon Han, Young-pil Kim, Jun-Bum Lee, S. Yamada, Shin-Deuk Kim, Si-Ok Sohn, Won-Seong Lee, Jung-Soo Park

المصدر: 2007 IEEE International Electron Devices Meeting.

مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, Chip, Subthreshold slope, law.invention, Reduction (complexity), law, Optoelectronics, Field-effect transistor, business, Layer (electronics), Dram, Communication channel

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d6958d1b1f7458fe1ca699f40f0951c7
https://doi.org/10.1109/iedm.2007.4419096

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