يعرض 1 - 10 نتائج من 269 نتيجة بحث عن '"X. Garros"', وقت الاستعلام: 0.89s تنقيح النتائج
  1. 1
    Insight Into HCI Reliability on I/O Nitrided Devices

    المؤلفون: C. Doyen, V. Yon, X. Garros, L. Basset, T. Mota Frutuoso, C. Dagon, C. Diouf, X. Federspiel, V. Millon, F. Monsieur, C. Pribat, D. Roy

    المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5d32e8a84fd239457ce9b37d14af3dbf
    https://doi.org/10.1109/irps48203.2023.10117681

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  2. 2
    Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration

    المؤلفون: T. Mota Frutuoso, X. Garros, P. Batude, L. Brunet, J. Lacord, B. Sklenard, V. Lapras, C. Fenouillet-Beranger, M. Ribotta, A. Magalhaes-Lucas, J. Kanyandekwe, R. Kies, G. Romano, E. Catapano, M. Casse, J. Lugo-Alvarez, P. Ferrari, F. Gaillard

    المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), IEEE

    المصدر: IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022)
    IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Jun 2022, Honolulu (HI), United States. ⟨10.1109/VLSITechnologyandCir46769.2022.9830504⟩
    IEEELink

    مصطلحات موضوعية: resistance, silicon-on-insulator, three-dimensional displays, VLSI (Very Large Scale Integration), PACS 85.42, capacitance, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, predictive models, performance evaluation

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9eef2750dbb3aeee813a581581b63000
    https://hal.science/hal-04069091

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  3. 3
    Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications

    المؤلفون: J. Hai, F. Cacho, A. Divay, E. Lauga-Larroze, J.-D. Arnould, J. Forest, V. Knopik, X. Garros

    المساهمون: STMicroelectronics, Reliable RF and Mixed-signal Systems (TIMA-RMS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Département d'Architectures, Conception et Logiciels Embarqués-LETI (DACLE-LETI), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), ST Microélectronics, ST Microélectronic, IEEE

    المصدر: IEEE International Reliability Physics Symposium (IRPS 2022)
    IEEE International Reliability Physics Symposium (IRPS 2022), IEEE, Mar 2022, Dallas, United States. pp.4B.2-1-4B.2-6, ⟨10.1109/IRPS48227.2022.9764535⟩

    مصطلحات موضوعية: sensitivity analysis, power amplifier, RF reliability, CMOS SOI, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Hot-Carrier Injection (HCI)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2f0a1ad5c79ec0c35e254af09504e2c
    https://hal.science/hal-04050556

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  4. 4
    Frequency dependant gate oxide TDDB model

    المؤلفون: M. Arabi, X. Federspiel, F. Cacho, M. Rafik, S. Blonkowski, X. Garros, G. Guibaudo

    المصدر: 2022 IEEE International Reliability Physics Symposium (IRPS).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1397572ba71a75cfa6828bd3f0c6ed4a
    https://doi.org/10.1109/irps48227.2022.9764503

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  5. 5
    3D sequential integration: applications and associated key enabling modules (design & technology)

    المؤلفون: P. Batude, O. Billoint, S. Thuries, P. Malinge, C. Fenouillet-Beranger, A. Peizerat, G. Sicard, P. Vivet, S. Reboh, C. Cavalcante, L. Brunet, M. Ribotta, L. Brevard, X. Garros, T. Mota Frutuoso, B. Sklenard, J. Lacord, J. Kanyandekwe, S. Kerdiles, P. Sideris, C. Theodorou, V. Lapras, M. Mouhdach, G. Gaudin, G. Besnard, I. Radu, F. Ponthenier, A. Farcy, E. Jesse, F. Guyader, T. Matheret, P. Brunet, F. Milesi, L. Le Van-Jodin, A. Sarrazin, B. Perrin, C. Moulin, S. Maitrejean, M. Alepidis, I. Ionica, S. Cristoloveanu, F. Gaillard, M. Vinet, F. Andrieu, J. Arcamone, E. Ollier

    المصدر: 2021 IEEE International Electron Devices Meeting (IEDM).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a954addef7e27e3dfae349b36fd38937
    https://doi.org/10.1109/iedm19574.2021.9720671

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  6. 6
    65nm RFSOI Power Amplifier Transistor Ageing at mm W frequencies, 14 GHz and 28 GHz

    المؤلفون: A. Divay, J. Forest, V. Knopik, J. Hai, N. Revil, J. Antonijevic, A. Michard, F. Cacho, E. Vincent, F. Gaillard, X. Garros

    المصدر: 2021 IEEE International Electron Devices Meeting (IEDM).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::95925e65eaf529a86727f0dc1357e1eb
    https://doi.org/10.1109/iedm19574.2021.9720531

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  7. 7
    Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs

    المؤلفون: R. Kom Kammeugne, C. Leroux, T. Mota Frutuoso, J. Cluzel, L. Vauche, C. Le Royer, R. Gwoziecki, X. Garros, F. Gaillard, M. Charles, E. Bano, G. Ghibaudo

    المصدر: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c6d94ca0e60d5a44939ec6f9faa39f86
    https://doi.org/10.1109/essderc53440.2021.9631820

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  8. 8
    Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration

    المؤلفون: F. Gaillard, C. Fenouillet-Beranger, X. Garros, Joris Lacord, Jose Lugo-Alvarez, Louis Gerrer, M. Casse, Philippe Ferrari, Laurent Brunet, E. Catapano, Francois Andrieu, T. Mota Frutuoso

    المصدر: IRPS

    مصطلحات موضوعية: Materials science, Silicon, business.industry, Interface (computing), Transistor, Oxide, chemistry.chemical_element, Silicon on insulator, Temperature measurement, law.invention, chemistry.chemical_compound, Reliability (semiconductor), chemistry, law, Optoelectronics, Degradation (geology), business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b798b8f9f057b1cb27f5e46793857d71
    https://doi.org/10.1109/irps46558.2021.9405107

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  9. 9
    BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations

    المؤلفون: F. Gaillard, Xavier Federspiel, X. Garros, Florian Cacho, J. Cluzel, Louis Gerrer, Emmanuel Vincent, David Roy

    المصدر: IRPS

    مصطلحات موضوعية: Stress (mechanics), Work (thermodynamics), Reliability (semiconductor), business.industry, Computer science, Limit (music), Microelectronics, business, Temperature measurement, Simulation, Degradation (telecommunications), Time–frequency analysis

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b13931d1cb5e6c5aa39e460453684da3
    https://doi.org/10.1109/irps46558.2021.9405145

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  10. 10
    A Very Robust and Reliable 2.7GHz +31dBm Si RFSOI Transistor for Power Amplifier Solutions

    المؤلفون: G. Bertrand, E. Granger, A. Giry, X. Garros, Emmanuel Vincent, J. Lugo, J. Cluzel, Xavier Federspiel, V. Knopik, A. Divay, Florian Cacho, F. Gaillard, Nathalie Revil

    المصدر: 2019 IEEE International Electron Devices Meeting (IEDM).

    مصطلحات موضوعية: Power-added efficiency, Computer science, business.industry, Amplifier, Transistor, Electrical engineering, law.invention, Power (physics), Reliability (semiconductor), law, Power semiconductor device, Very High Level, business, 5G

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ac51ba5a3c34d22e8706ffea36f6feaa
    https://doi.org/10.1109/iedm19573.2019.8993649

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