يعرض 1 - 10 نتائج من 2,087 نتيجة بحث عن '"Yonezawa, Y"', وقت الاستعلام: 1.04s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Construction of HILS System for LLC Resonant Converter Using LPV Model

    المؤلفون: Funaki, H., Noge, Y., Shoyama, M., Yonezawa, Y., Miyazawa, A.

    المصدر: IEEE Transactions on Industry Applications IEEE Trans. on Ind. Applicat. Industry Applications, IEEE Transactions on. 60(2):3297-3305 Apr, 2024

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  2. 2
    دورية أكاديمية
    A Novel IFITM5 Variant Associated with Phenotype of Osteoporosis with Calvarial Doughnut Lesions: A Case Report

    المؤلفون: Makitie, RE, Pekkinen, M, Morisada, N, Kobayashi, D, Yonezawa, Y, Nishimura, G, Ikegawa, S, Makitie, O

    المصدر: Calcified tissue international. 109(6):626-632

    مصطلحات موضوعية: Medicin och hälsovetenskap

    URL الوصول: http://kipublications.ki.se/Default.aspx?queryparsed=id:146985041

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  3. 3
    مؤتمر
    Topography Simulation of 4H-SiC-Chemical-Vapor-Deposition Trench Filling Including an OrientationDependent Surface Free Energy

    المؤلفون: Mochizuki, K., Ji, S., Kosugi, R., Yonezawa, Y., Okumura, H.

    المصدر: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2018 International Conference on. :331-335 Sep, 2018

    Relation: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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  4. 4
    مؤتمر
    Recent Progress in High to Ultra-High-Voltage SiC Power Devices: Development and Application

    المؤلفون: Yonezawa, Y.

    المصدر: 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) Power Electronics Conference (IPEC-Niigata 2018 –ECCE Asia), 2018 International. :3603-3606 May, 2018

    Relation: 2018 International Power Electronics Conference (IPEC-Niigata 2018 –ECCE Asia)

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  5. 5
    دورية أكاديمية
    Modeling of Al Doping During 4H-SiC Chemical-Vapor-Deposition Trench Filling

    المؤلفون: Mochizuki, K., Kosugi, R., Yonezawa, Y., Okumura, H.

    المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 7:470-475 2019

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  6. 6
    مؤتمر
    Dynamic behavior of a medium-voltage N-channel SiC-IGBT with ultra-fast switching performance of 300 kV/as

    المؤلفون: Koseki, K., Yonezawa, Y., Mizushima, T., Matsunaga, S., Iizuka, Y., Yamaguchi, H.

    المصدر: 2016 19th International Conference on Electrical Machines and Systems (ICEMS) Electrical Machines and Systems (ICEMS), 2016 19th International Conference on. :1-6 Nov, 2016

    Relation: 2016 19th International Conference on Electrical Machines and Systems (ICEMS)

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  7. 7
    دورية أكاديمية
    BRAID GROUP ACTIONS FROM CATEGORICAL SYMMETRIC HOWE DUALITY ON DEFORMED WEBSTER ALGEBRAS

    المؤلفون: KHOVANOV, M., LAUDA, A. D., SUSSAN, J.Aff3, IDs00031021096696_cor3, YONEZAWA, Y.

    المصدر: Transformation Groups. 27(3):919-982

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  8. 8
    مؤتمر
    Low Von 17kV SiC IGBT assisted n-MOS Thyristor

    المؤلفون: Matsunaga, S., Mizushima, T., Takenaka, K., Kiuchi, Y., Koyama, A., Yonezawa, Y., Okumura, H.

    المصدر: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :20.2.1-20.2.4 Dec, 2019

    Relation: 2019 IEEE International Electron Devices Meeting (IEDM)

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  9. 9
    مؤتمر
    Progress in High and Ultrahigh Voltage Silicon Carbide Device Technology

    المؤلفون: Yonezawa, Y., Nakayama, K., Kosugi, R., Harada, S., Koseki, K., Sakamoto, K., Kimoto, T., Okumura, H.

    المصدر: 2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :19.3.1-19.3.4 Dec, 2018

    Relation: 2018 IEEE International Electron Devices Meeting (IEDM)

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  10. 10
    مؤتمر
    First topography simulation of SiC-chemical-vapor-deposition trench filling, demonstrating the essential impact of the Gibbs-Thomson effect

    المؤلفون: Mochizuki, K., Ji, S., Kosugi, R., Yonezawa, Y., Okumura, H.

    المصدر: 2017 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2017 IEEE International. :35.4.1-35.4.4 Dec, 2017

    Relation: 2017 IEEE International Electron Devices Meeting (IEDM)

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