يعرض 1 - 10 نتائج من 28 نتيجة بحث عن '"Yun, Nick"', وقت الاستعلام: 1.01s تنقيح النتائج
  1. 1
    مؤتمر
    Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs

    المؤلفون: Kim, Dongyoung, DeBoer, Skylar, Mancini, Stephen A, Isukapati, Sundar Babu, Lynch, Justin, Yun, Nick, Morgan, Adam J, Jang, Seung Yup, Sung, Woongje

    المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-4 Mar, 2023

    Relation: 2023 IEEE International Reliability Physics Symposium (IRPS)

    Full Text Finder
    أضف إلى المفضلة
  2. 2
    مؤتمر
    A New Layout Method for Junction Field Effect Transistors (JFETs) on 4H-SiC that Provides a Significant Reduction in On-Resistance

    المؤلفون: Lynch, Justin, Yun, Nick, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

    المصدر: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Wide Bandgap Power Devices & Applications (WiPDA), 2022 IEEE 9th Workshop on. :127-131 Nov, 2022

    Relation: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)

    Full Text Finder
    أضف إلى المفضلة
  3. 3
    مؤتمر
    Packaging of a 15-kV Silicon Carbide MOSFET With Insulation Enhanced by a Nonlinear Resistive Polymer-Nanoparticle Coating

    المؤلفون: Zhang, Zichen, Lu, Shengchang, Nicholas, Carl, Yun, Nick, Sung, Woongje, Ngo, Khai D.T., Lu, Guo-Quan

    المصدر: 2022 IEEE Energy Conversion Congress and Exposition (ECCE) Energy Conversion Congress and Exposition (ECCE), 2022 IEEE. :1-4 Oct, 2022

    Relation: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)

    Full Text Finder
    أضف إلى المفضلة
  4. 4
    مؤتمر
    Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)

    المؤلفون: Yun, Nick, Lynch, Justin, Morgan, Adam J, Xing, Diang, Jin, Michael, Qian, Jiashu, Kang, Minseok, Amarasinghe, Voshadhi, Ransom, John, Veliadis, Victor, Agarwal, Anant, Sung, Woongje

    المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :249-252 May, 2022

    Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
  5. 5
    مؤتمر
    Packaging of 20 kV Double-Side Cooled Silicon Carbide Diode Module With Electrical Insulation Enhanced by a Polymer-Nanoparticle Coating

    المؤلفون: Zhang, Zichen, Nicholas, Carl, Emmanuel, Arriola, Ngo, Khai D.T., Lu, Guo-Quan, Lynch, Justin, Yun, Nick, Morgan, Adam, Sung, Woongje

    المصدر: 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) Power Electronics and Applications (EPE'23 ECCE Europe), 2023 25th European Conference on. :P.1-P.6 Sep, 2023

    Relation: 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

    أضف إلى المفضلة
  6. 6
    مؤتمر
    A Static, Switching, Short-circuit Characteristics of 1.2 kV 4H-SiC MOSFETs: Comparison between Linear and (Bridged) Hexagonal Topology

    المؤلفون: Kim, Dongyoung, Yun, Nick, deBoer, Skylar, Morgan, Adam J, Jang, Seung Yup, Sung, Woongje, Fan, Junchong, Yu, Susanna, Kang, Minseok, Agarwal, Anant K.

    المصدر: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Wide Bandgap Power Devices and Applications (WiPDA), 2021 IEEE 8th Workshop on. :9-13 Nov, 2021

    Relation: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

    أضف إلى المفضلة
  7. 7
    مؤتمر
    Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry

    المؤلفون: Yun, Nick, Lynch, Justin, DeBoer, Skylar, Morgan, Adam J, Sung, Woongje, Xing, Diang, Kang, Minseok, Agarwal, Anant, Veliadis, Victor, Amarasinghe, Voshadhi, Ransom, John

    المصدر: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Wide Bandgap Power Devices and Applications (WiPDA), 2021 IEEE 8th Workshop on. :361-365 Nov, 2021

    Relation: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

    أضف إلى المفضلة
  8. 8
    مؤتمر
    Demonstration of High Voltage (15kV) Split-Gate 4H-SiC MOSFETs

    المؤلفون: Lynch, Justin, Yun, Nick, Morgan, Adam J., Sung, Woongje, Deckman, Igal, Rossman, Dennis, Kim, Sung, Nguyen, Duy-Son, Seo, Jin-Ho, Habersat, Daniel, Hinojosa, Miguel, Green, Ronald, Lelis, Aivars

    المصدر: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Wide Bandgap Power Devices and Applications (WiPDA), 2021 IEEE 8th Workshop on. :95-100 Nov, 2021

    Relation: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

    أضف إلى المفضلة
  9. 9
    مؤتمر
    Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study

    المؤلفون: Kim, Dongyoung, Yun, Nick, Sung, Woongje

    المصدر: 2021 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2021 IEEE International. :1-4 Mar, 2021

    Relation: 2021 IEEE International Reliability Physics Symposium (IRPS)

    Full Text Finder
    أضف إلى المفضلة
  10. 10
    مؤتمر
    Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness

    المؤلفون: Kim, Dongyoung, Morgan, Adam J, Yun, Nick, Sung, Woongje, Agarwal, Anant, Kaplar, Robert

    المصدر: 2020 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2020 IEEE International. :1-6 Apr, 2020

    Relation: 2020 IEEE International Reliability Physics Symposium (IRPS)

    Full Text Finder
    أضف إلى المفضلة
أدوات البحث: أحصل على تغذية RSS – أرسل هذا البحث بالبريد الإلكتروني – حفظ البحث – جدول التنبيهات: لا شيء