يعرض 1 - 10 نتائج من 78 نتيجة بحث عن '"Yves Morand"', وقت الاستعلام: 1.01s تنقيح النتائج
  1. 1
    High performance silicon-based substrate using buried PN junctions towards RF applications

    المؤلفون: Jose Lugo, Jean-Pierre Raskin, C. Plantier, Martin Rack, Joris Lacord, Maxime Moulin, Louis Hutin, Yves Morand, Thibaud Fache, Frederic Allibert, Zdenek Chalupa, Fred Gaillard

    المساهمون: UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique

    مصطلحات موضوعية: Frequency response, Materials science, Passivation, Silicon, business.industry, chemistry.chemical_element, Substrate (electronics), chemistry, Electrical resistivity and conductivity, Optoelectronics, Figure of merit, Radio frequency, business, Layer (electronics)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::396affff672598c336d1958a4de8f4a8
    https://hdl.handle.net/2078.1/269407

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  2. 2
    Development of X-ray Photoelectron Spectroscopy under bias and its application to determine band-energies and dipoles in the HKMG stack

    المؤلفون: Eugénie Martinez, Pushpendra Kumar, Jean-Michel Pedini, Florian Domengie, F. Gaillard, Charles Leroux, Denis Guiheux, Claude Tabone, Gerard Ghibaudo, Virginie Loup, Yves Morand

    المصدر: 2018 IEEE International Electron Devices Meeting (IEDM).

    مصطلحات موضوعية: Work (thermodynamics), Dipole, Materials science, X-ray photoelectron spectroscopy, Stack (abstract data type), business.industry, Band diagram, Optoelectronics, Biasing, business, Metal gate, Threshold voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::00406df9a7d362b9445cd339472b7df7
    https://doi.org/10.1109/iedm.2018.8614554

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  3. 3
    OxRAM integration above FDSOI transistor drain: Integration approach and process impact on electrical characteristics

    المؤلفون: V. Loup, G. Audoit, S. Reboh, R. Coquand, M. Vinet, M. Barlas, N. Rambal, S Barraud, A. Toffoli, E. Vianello, C. Jahan, V. Beugin, Vincent Delaye, O. Pollet, L. Brevard, C. Vizioz, O. Faynot, T. Dewolf, Nicolas Posseme, S. Chevalliez, N. Allouti, L. Perniola, Sébastien Barnola, B. Bouix, S. Bernasconi, C. Comboroure, Philippe Rodriguez, Yves Morand, C. Tallaron, L. Grenouillet

    المصدر: Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.

    مصطلحات موضوعية: Materials science, law, Process (engineering), Transistor, Engineering physics, law.invention

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::40e32b0961ff0b1c447494a433e2c935
    https://doi.org/10.7567/ssdm.2017.d-1-04

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  4. 4
    Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

    المؤلفون: Yves Morand, Louis Hutin, Donato Kava, Fabrice Nemouchi, Maud Vinet, Magali Gregoire, Emmanuel Dubois, N. Bernier, J. Borrel, Remy Gassilloud

    المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), University of Texas [El Paso] (UTEP ), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), French Public Authority through NANO, French Public Authority through Equipex [FDSOI11], Microélectronique Silicium - IEMN (MICROELEC SI - IEMN)

    المصدر: Japanese Journal of Applied Physics
    Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2017, 56 (4), 04CB02, 7 p. ⟨10.7567/JJAP.56.04CB02⟩
    Japanese Journal of Applied Physics, 2017, 56 (4), 04CB02, 7 p. ⟨10.7567/JJAP.56.04CB02⟩

    مصطلحات موضوعية: 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Applied physics, business.industry, General Engineering, General Physics and Astronomy, Nanotechnology, Insulator (electricity), 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Engineering physics, [SPI]Engineering Sciences [physics], Semiconductor, CMOS, Electrical resistivity and conductivity, 0103 physical sciences, 0210 nano-technology, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ba755f3fe013386bfb3bc676848dcef
    https://hal.archives-ouvertes.fr/hal-03325004

    View this record from the Institute of Physics
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  5. 5
    Extra-low parasitic gate-to-contacts capacitance architecture for sub-14nm transistor nodes

    المؤلفون: D. Bensahel, Yves Morand, Heimanu Niebojewski, O. Rozeau, Marie-Anne Jaud, Emmanuel Dubois, C. Le Royer, Thierry Poiroux

    المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

    المصدر: Solid-State Electronics
    Solid-State Electronics, Elsevier, 2014, 97, pp.45-51. ⟨10.1016/j.sse.2014.04.028⟩
    Solid-State Electronics, 2014, 97, pp.45-51. ⟨10.1016/j.sse.2014.04.028⟩

    مصطلحات موضوعية: Engineering, parasitic capacitance, delay, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, Capacitance, law.invention, Parasitic capacitance, self-aligned contacts, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Materials Chemistry, Parasitic extraction, Electrical and Electronic Engineering, Stepper, 010302 applied physics, business.industry, Transistor, Electrical engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, FDSOI, Electronic, Optical and Magnetic Materials, Parasitic element, Dynamic demand, 0210 nano-technology, business, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::458ed30a8ebc48a14d33814950463c61
    https://doi.org/10.1016/j.sse.2014.04.028

    View record from ScienceDirect
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  6. 6
    Vertically Stacked-NanoWires MOSFETs in a Replacement Metal Gate Process with Inner Spacer and SiGe Source/Drain

    المؤلفون: N. Rambal, I. Tinti, Zineb Saghi, V. Balan, O. Faynot, G. Audoit, Nicolas Bernier, F. Allain, Christian Arvet, Claude Tabone, Nicolas Posseme, B. Previtalli, Sylvain Barraud, C. Vizioz, J.M. Hartmann, A. Toffoli, E. Augendre, C. Euvrard, L. Gaben, Yves Morand, Patricia Pimenta-Barros, C. Comboroure, V. Lapras, R. Coquand, V. Maffini-Alvaro, Shay Reboh, David Cooper, Laurent Grenouillet, M.-P. Samson, J. Daranlot, Olivier Rozeau, Maud Vinet, Virginie Loup

    المساهمون: Laboratoire de Génie Civil et d'Ingénierie Environnementale (LGCIE), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Funding : the NANO 2017 program, European Project: 688101,H2020,H2020-ICT-2015,SUPERAID7(2016)

    المصدر: 2016 IEEE International Electron Devices Meeting (IEDM)
    2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. ⟨10.1109/IEDM.2016.7838441⟩

    مصطلحات موضوعية: 010302 applied physics, Fabrication, Materials science, Silicon, business.industry, Transistor, Nanowire, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Silicon-germanium, law.invention, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], chemistry, law, 0103 physical sciences, Electronic engineering, Optoelectronics, Precession electron diffraction, Field-effect transistor, 0210 nano-technology, business, Metal gate

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29412b777acc4388dc0419b37ccb3235
    https://hal-cea.archives-ouvertes.fr/cea-01973383/document

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  7. 7
    Ultra-thin Dielectric Insertions for Contact Resistivity Lowering in Advanced CMOS: Promise and Challenges

    المؤلفون: M. Vinet, J. Borrel, Louis Hutin, Yves Morand, F. Nemouchi

    المصدر: Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.

    مصطلحات موضوعية: Materials science, CMOS, business.industry, Electrical resistivity and conductivity, Optoelectronics, Nanotechnology, Dielectric, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a608cf23c7012767fe1d515071a90d39
    https://doi.org/10.7567/ssdm.2016.o-6-01

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  8. 8
    Source and Drain Contact Module for FDSOI MOSFETs : Silicidation and Strain Engineering

    المؤلفون: Sophie Bernasconi, David Cooper, Jean-Francois Damlencourt, Yves Morand, Fabrice Nemouchi, Sylvie Favier, Jean-Michel Hartmann, Veronique Carron

    المصدر: ECS Transactions. 58:239-248

    مصطلحات موضوعية: Engineering, Engineering drawing, Strain engineering, business.industry, business, Engineering physics

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c04414bbd663a5945ccb202753ab900d
    https://doi.org/10.1149/05809.0239ecst

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  9. 9
    Evaluation Of Ni(Si1-xGex) and Pt(Si1-xGex) Contact Resistance for FD-SOI PMOS Metallic Source and Drain

    المؤلفون: Fabienne Allain, Fabrice Nemouchi, V. Carron, Maud Vinet, Yves Morand, Jean-Francois Damlencourt, D. Lafond, Emilie Bourjot, Sophie Bernasconi, Olga Cueto

    المصدر: ECS Transactions. 50:197-204

    مصطلحات موضوعية: Resistive touchscreen, Materials science, business.industry, Transistor, Contact resistance, Silicon on insulator, Salicide, law.invention, PMOS logic, law, Electrical resistivity and conductivity, Electronic engineering, Optoelectronics, Process window, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::733f4d41b81c8bbd34503cd8c4f16f12
    https://doi.org/10.1149/05009.0197ecst

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  10. 10
    Considerations on Fermi-depinning, dipoles and oxide tunneling for oxygen-based dielectric insertions in advanced CMOS contacts

    المؤلفون: Magali Gregoire, Emmanuel Nolot, H. Grampeix, M. Vinet, Fabienne Allain, J.P. Barnes, E. Ghegin, Claude Tabone, Louis Hutin, Philippe Rodriguez, Emmanuel Dubois, Fabrice Nemouchi, Yves Morand, J. Borrel

    المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire commun STMicroelectronics-IEMN T4, Microélectronique Silicium - IEMN (MICROE SI - IEMN)

    المصدر: IEEE Silicon Nanoelectronics Workshop (SNW)
    IEEE Silicon Nanoelectronics Workshop (SNW), Jun 2016, Honolulu, United States. pp.140-141, ⟨10.1109/SNW.2016.7578022⟩

    مصطلحات موضوعية: Materials science, business.industry, Oxide, Insulator (electricity), Dielectric, Atomic layer deposition, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Semiconductor, chemistry, Electrical resistivity and conductivity, Electronic engineering, Optoelectronics, business, Silicon oxide, Quantum tunnelling

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::319871fb63b4830704dd626a4c7295c8
    https://hal.science/hal-03325002

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