يعرض 1 - 10 نتائج من 18,449 نتيجة بحث عن '"ZIRCONIUM oxide"', وقت الاستعلام: 1.66s تنقيح النتائج
  1. 1
    مؤتمر
    The Effects of Al2O3 Interlayer on the Ferroelectric Behavior of Hf0.5Zr0.5O2 Thin Film for E-mode Ferroelectric Charge Trap Gate GaN HEMT

    المؤلفون: Wu, Jui-Sheng, Yang, Tsung-Ying, Weng, You-Chen, Yang, Chih-Yi, Du, Yu-Tung, Wei, Yi-Hsiang, Chang, Edward-Yi

    المصدر: 2024 IEEE International Conference on Semiconductor Electronics (ICSE) Semiconductor Electronics (ICSE), 2024 IEEE International Conference on. :68-71 Aug, 2024

    Relation: 2024 IEEE International Conference on Semiconductor Electronics (ICSE)

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  2. 2
    دورية أكاديمية
    High-Temperature Retention Stability of Multibit Ferroelectric HfZrO₂ FinFET With SiGe/Si Superlattice Channel for Enhanced Speed and Memory Window

    المؤلفون: Yao, Y., Lin, T., Wei, C., Chen, B., Fang, Y., Chang, H., Fu, Y., Luo, G., Hou, F., Wu, Y.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(10):5975-5979 Oct, 2024

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  3. 3
    دورية أكاديمية
    The Optical-Electronic Integrated Spiking Neurons Based on Antiferroelectric Thin-Film Transistors

    المؤلفون: Luo, X., Yang, P., Yu, S., Guo, X., Zhang, Y., Liu, Y., Sun, Y., Wang, Y., Liu, S., Li, Q.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(10):6442-6447 Oct, 2024

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  4. 4
    دورية أكاديمية
    La-Doped HZO (La:HZO) Ferroelectric Devices Toward High-Temperature Application

    المؤلفون: Xu, K., Wang, T., Liu, Y., Yu, J., Li, Z., Meng, J., Zhu, H., Sun, Q., Wei Zhang, D., Chen, L.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(9):5375-5379 Sep, 2024

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  5. 5
    دورية أكاديمية
    HZO (>10 nm) Films for Achieving High-κ Near Morphotropic Phase Boundary at Low-Temperature Furnace Annealing Process

    المؤلفون: Qin, Y., Gaddam, V., Jung, T., Jeon, S.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(9):5618-5623 Sep, 2024

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  6. 6
    دورية أكاديمية
    Demonstration of Wake-Up Free 6 nm Ultrathin ZrO₂-HfO₂ Superlattice Ferroelectric Capacitors With High Endurance Against Fatigue

    المؤلفون: Liang, Y., Liu, Z., Cai, Z., Han, X., Huang, H., Lin, Y., Yi Chang, E., Lin, C., Takenaka, M., Toprasertpong, K., Takagi, S.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(8):1468-1471 Aug, 2024

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  7. 7
    مؤتمر
    Differences in Ferroelectric Characteristics of Similar Hafnium Zirconium Oxide Films Studied Using X - Ray Photoelectron Spectroscopy

    المؤلفون: Salcedo, Guillermo A., Islam, Ahmad E., Back, Tyson C., Leedy, Kevin D., Wolfe, Timothy

    المصدر: NAECON 2024 - IEEE National Aerospace and Electronics Conference NAECON 2024 - IEEE National, Aerospace and Electronics Conference. :262-267 Jul, 2024

    Relation: NAECON 2024 - IEEE National Aerospace and Electronics Conference

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  8. 8
    مؤتمر
    Preparation of Transparent Conductive Thin-Film Coatings by Spray-Pyrolysis

    المؤلفون: Zinchenko, Timur O., Karpanin, Oleg V., Pecherskaya, Ekaterina A., Novichkov, Maxim D., Golubkov, Pavel E., Shepeleva, Yulia V.

    المصدر: 2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM) Young Professionals in Electron Devices and Materials (EDM), 2024 IEEE 25th International Conference of. :300-303 Jun, 2024

    Relation: 2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM)

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  9. 9
    مؤتمر
    CMOS-Compatible Low-T Processing Methods for HZO-based DRAM capacitors by E-field Cycling

    المؤلفون: Li, Yuanbiao, Tang, Xinyi, Xu, Guangwei, Miao, Songming, Chen, Xiao, Li, Jiachen, Lu, Di, Long, Shibing

    المصدر: 2024 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2024 IEEE International. :1-4 May, 2024

    Relation: 2024 IEEE International Memory Workshop (IMW)

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  10. 10
    دورية أكاديمية
    Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C)

    المؤلفون: Zhong, K., Zhang, F., Zhang, Z., Zhang, Q., Hou, Z., Zhao, C., Han, G., Xu, G., Li, J., Liu, Y., Xu, J., Yin, H.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(7):1193-1196 Jul, 2024

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