يعرض 1 - 10 نتائج من 1,386 نتيجة بحث عن '"algaas-gaas"', وقت الاستعلام: 1.52s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Investigation of Power IR (850 nm) Light-Emitting Diodes Manufacturing by Lift-Off Technique of AlGaAs–GaAs-Heterostructure to Carrier-Substrate

    المؤلفون: Malevskaya, A. V.Aff1, IDS1063784223080194_cor1, Kalyuzhnyy, N. A., Soldatenkov, F. Y., Levin, R. V., Salii, R. A., Malevskii, D. A., Pokrovskii, P. V., Larionov, V. R., Andreev, V. M.

    المصدر: Technical Physics. 68(12):663-667

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  2. 2
    دورية أكاديمية
    Power Source Based on Al0.8Ga0.2As/GaAs Photovoltaic Converter and YPO4:Eu/(238Pu) Radioluminescent Emitter

    المؤلفون: Prudchenko, K. K.Aff1, IDS1063784223080297_cor1, Tolkachev, I. A., Kontrosh, E. V., Silantieva, E. A., Kalinovskii, V. S.

    المصدر: Technical Physics. 68(12):736-741

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  3. 3
    دورية أكاديمية
    Development and Study of a Model of an Autonomous Energy Information Station of Free Space Optical Communication

    المؤلفون: Kalinovskii, V. S.Aff1, IDS1063785023900285_cor1, Terukov, E. I., Ascheulov, Yu. V., Kontrosh, E. V., Yuferev, V. S., Prudchenko, K. K., Chekalin, A. V., Terukova, E. E., Tolkachev, I. A., Goncharov, S. E., Ustinov, V. M.

    المصدر: Technical Physics Letters. 49(Suppl 1):S26-S30

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  4. 4
    دورية أكاديمية
    Highly Efficient Photovoltaic Laser Power Converters

    المؤلفون: Viacheslav M. Andreev, Nikolay A. Kalyuzhnyy, Aleksandra V. Malevskaya, Mariia V. Nakhimovitch, Maxim Z. Shvarts

    المصدر: RUDN Journal of Engineering Research, Vol 25, Iss 1, Pp 75-85 (2024)

    مصطلحات موضوعية: photovoltaic converter, algaas/gaas heterostructure, laser radiation, bragg reflector, Engineering (General). Civil engineering (General), TA1-2040

    وصف الملف: electronic resource

    Relation: https://journals.rudn.ru/engineering-researches/article/viewFile/38549/23314; https://doaj.org/toc/2312-8143; https://doaj.org/toc/2312-8151

    URL الوصول: https://doaj.org/article/6bf8b2c75d8d400387c10a2184efac85

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  5. 5
    مؤتمر
    Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

    المؤلفون: Dutta, Ritam, Tamang, Tenzing, Paul, Pranoy, Paitya, Nitai

    المصدر: 2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184) Trends in Electronics and Informatics (ICOEI)(48184), 2020 4th International Conference on. :137-142 Jun, 2020

    Relation: 2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)

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  6. 6
    دورية أكاديمية
    On the Effect of Etching with a Focused Ga+ Ion Beam in the Energy Range 12–30 keV on the Luminescent Properties of the Al0.18Ga0.82As/GaAs/Al0.18Ga0.82As Heterostructure

    المؤلفون: Voznyuk, G. V.Aff1, Aff2, IDS1063782623080171_cor1, Grigorenko, I. N.Aff1, Aff2, Lila, A. S., Mitrofanov, M. I.Aff1, Aff3, Nikolaev, D. N., Evtikhiev, V. P.Aff1, Aff2

    المصدر: Semiconductors. 57(6):316-319

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  7. 7
    دورية أكاديمية
    High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors

    المؤلفون: Malevskaya, A. V.Aff1, IDS106378262307014X_cor1, Kalyuzhnyy, N. A., Mintairov, S. A., Salii, R. A., Malevskii, D. A., Nakhimovich, M. V., Larionov, V. R., Pokrovskii, P. V., Shvarts, M. Z., Andreev, V. M.

    المصدر: Semiconductors. 57(5):252-256

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  8. 8
    دورية أكاديمية
    Modeling of Short-Channel Effects in GaN HEMTs

    المؤلفون: Allaei, M., Shalchian, M., Jazaeri, F.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(8):3088-3094 Aug, 2020

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  9. 9
    مؤتمر
    Investigation on transient catastrophic optical damage in high power AlGaAs/GaAs laser diodes

    المؤلفون: Chen, Yanning, Qiao, Yanbin, Ma, Qiang, Li, Jianqiang, Shao, Jin, Yuan, Yidong, Tang, Xiaoke, Zhang, Haifeng, Zhao, Dongyan

    المصدر: 2017 18th International Conference on Electronic Packaging Technology (ICEPT) Electronic Packaging Technology (ICEPT), 2017 18th International Conference on. :615-618 Aug, 2017

    Relation: 2017 18th International Conference on Electronic Packaging Technology (ICEPT)

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  10. 10
    دورية أكاديمية
    Studies on the Material and Photoluminescence Characteristics of the Structure of Al0.9Ga0.1As/GaAs DBR with Varied Doping

    المؤلفون: Lin, TaoAff1, Aff2, IDs11664022100439_cor1, Xie, Jianan, Zhang, Tianjie, Li, Jingjing, Xie, Hongwei, Duan, Yupeng

    المصدر: Journal of Electronic Materials. 52(1):730-737

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