يعرض 1 - 10 نتائج من 2,977 نتيجة بحث عن '"band-to-band tunneling"', وقت الاستعلام: 0.96s تنقيح النتائج
  1. 1
    مؤتمر
    Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations

    المؤلفون: Ley, Maximilian, Dick, Jan F., Schulze, Jorg

    المصدر: 2024 47th MIPRO ICT and Electronics Convention (MIPRO) MIPRO ICT and Electronics Convention (MIPRO), 2024 47th. :1573-1578 May, 2024

    Relation: 2024 47th MIPRO ICT and Electronics Convention (MIPRO)

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  2. 2
    مؤتمر
    A Comprehensive Investigation of $\text{GaSb}/\text{GaAs}_{0.5}\text{Sb}_{0.5}/\text{GaAs}$ based Double Gate Source-Pocket Engineered Heterogeneous Gate Dielectric Vertical TFET for Optimized Low-Power Applications

    المؤلفون: Mahbub, Lamiya, Masud Badhon, Mehrab Ibne, Sultana, Sunjida, Saha, Riya

    المصدر: 2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT) Electrical Engineering and Information & Communication Technology (ICEEICT), 2024 6th International Conference on. :544-549 May, 2024

    Relation: 2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT)

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  3. 3
    دورية أكاديمية
    Leakage Current and Hot-Carrier Injection in the Junctionless Nanowire FETs Enhanced by Tensile Mechanical Stress

    المؤلفون: Kumar, N., Gupta, A., Singh, P.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(7):4420-4423 Jul, 2024

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  4. 4
    دورية أكاديمية
    Analysis of Nanosheet Field-Effect Transistor With Local Bottom Isolation

    المؤلفون: You, J., Kim, H., Kwon, D.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(5):2844-2848 May, 2024

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  5. 5
    مؤتمر
    Performance Analysis of InSb Source-Based Heterojunctionless Nanowire TFET for Low-Power Application: Design and Simulation

    المؤلفون: Anam, Aadil, Amin, S. Intekhab, Prasad, Dinesh

    المصدر: 2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI) Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI), 2024 IEEE International Conference on. 2:1-6 Mar, 2024

    Relation: 2024 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI)

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  6. 6
    دورية أكاديمية
    Revisiting Lateral-BTBT Gate-Induced Drain Leakage in Nanowire FETs for 1T-DRAM

    المؤلفون: Bashir, M.Y., Jaiswal, A.K., Patel, S.D., Sahay, S.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(4):2714-2720 Apr, 2024

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  7. 7
    دورية أكاديمية
    Dielectric-Modulated Junctionless Carbon Nanotube Field-Effect Transistor as a Label-Free DNA Nanosensor: Achieving Ultrahigh Sensitivity in the Band-to-Band Tunneling Regime

    المؤلفون: Tamersit, K.

    المصدر: IEEE Sensors Journal IEEE Sensors J. Sensors Journal, IEEE. 24(3):2915-2922 Feb, 2024

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  8. 8
    مؤتمر
    Temperature Sensitivity and Reliability Study of Symmetrical U-Shaped Gate Line TFET: RF/Analog and Linearity Performance Analysis

    المؤلفون: Anam, Aadil, Amin, S. Intekhab, Prasad, Dinesh

    المصدر: 2023 IEEE International Symposium on Smart Electronic Systems (iSES) ISES Smart Electronic Systems (iSES), 2023 IEEE International Symposium on. :99-104 Dec, 2023

    Relation: 2023 IEEE International Symposium on Smart Electronic Systems (iSES)

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  9. 9
    دورية أكاديمية
    Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor

    المؤلفون: Kwak, B., Kwon, D., Kim, H.

    المصدر: IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 23:562-566 2024

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  10. 10
    دورية أكاديمية
    Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-Temperature Application

    المؤلفون: Tien, C., Lin, Y.

    المصدر: IEEE Access Access, IEEE. 12:83629-83637 2024

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