يعرض 1 - 10 نتائج من 5,783 نتيجة بحث عن '"barrier height"', وقت الاستعلام: 1.53s تنقيح النتائج
  1. 1
    مؤتمر
    Understanding Trap-Induced Barrier Height Fluctuations in Nickel-Silicon Contacts for Advanced Semiconductor Technology

    المؤلفون: Sharma, Deepak K., Datta, Arjun, Singh, Jatinder P., Kanishk, Srivastava, Rohan, Das, Gourab, Kedia, Jyoti, Kumar, Sanjeev, Kumar, Vivek, Singh, Arun K.

    المصدر: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024

    Relation: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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  2. 2
    مؤتمر
    TCAD Investigation of AlGaN/AlN/GaN HEMT for Hydrogen Sensing Applications

    المؤلفون: Kumaran, Renuka, Rahul, J, Varghese, Arathy, Rajan, Lintu

    المصدر: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024

    Relation: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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  3. 3
    مؤتمر
    High-k dielectric integration to improve breakdown characteristics of β-Ga₂O₃ Schottky diode

    المؤلفون: Sharma, Pooja, Parasubotu, Yeshwanth, Lodha, Saurabh

    المصدر: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024

    Relation: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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  4. 4
    دورية أكاديمية
    Lagging Thermal Annealing for Barrier Height Uniformity Evolution of Ni/4H-SiC Schottky Contacts

    المؤلفون: Pristavu, G., Brezeanu, G., Dan-Theodor, O., Pascu, R., Draghici, F., Serbanescu, M., Enache, A.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(4):2805-2809 Apr, 2024

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  5. 5
    دورية أكاديمية
    Schottky Barrier Height Modification of Graphene/Ge by Al2O3 Interfacial Layer and Au Nanoparticles for High-Gain Short-Wavelength Infrared Photodetectors

    المؤلفون: Ding, H., Li, S., Wu, S., Yang, T., Lin, G., Li, C.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(3):2159-2164 Mar, 2024

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  6. 6
    دورية أكاديمية
    Surface Pretreatment by Low-Temperature O2 Gas Annealing for Performance Improvement in Pt/β-Ga2O3 Schottky Barrier Diodes

    المؤلفون: Hu, H., Wang, Y., Jia, X., Li, Y., Li, B., Luo, Z., Zeng, X., Fang, C., Liu, Y., Hao, J., Shan, Y., Dong, H., Hao, Y., Han, G.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(3):1464-1468 Mar, 2024

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  7. 7
    مؤتمر
    Investigating the Impact of Gate Metals on the Electrical Properties of AlGaN/GaN HEMTs

    المؤلفون: Nautiyal, Priyanka, Pande, Peyush, Kundu, Virender, Joshi, Vikas

    المصدر: 2023 International Conference on Next Generation Electronics (NEleX) Next Generation Electronics (NEleX), 2023 International Conference on. :1-4 Dec, 2023

    Relation: 2023 International Conference on Next Generation Electronics (NEleX)

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  8. 8
    دورية أكاديمية
    Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions

    المؤلفون: Lee, T.Y., Kim, Y., Ahn, S., Jeon, D.

    المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 12:379-383 2024

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  9. 9
    دورية أكاديمية
    1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow

    المؤلفون: Zhang, Y., Liu, P., Lei, G., Zhang, Q.J.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(8):4293-4302 Aug, 2023

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  10. 10
    دورية أكاديمية
    PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates

    المؤلفون: Spencer, Joseph A.Aff1, Aff2, IDs11664024109665_cor1, Jacobs, Alan G., Hobart, Karl D., Koehler, Andrew D., Anderson, Travis J., Zhang, Yuhao, Tadjer, Marko J.

    المصدر: Journal of Electronic Materials. 53(6):2798-2805

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