يعرض 1 - 10 نتائج من 24,714 نتيجة بحث عن '"buried"', وقت الاستعلام: 0.85s تنقيح النتائج
  1. 1
    مؤتمر
    Demonstration of Pseudo Independent Driving of Buried Gate in Trench Field Plate MOSFETs

    المؤلفون: Nishiwaki, Tatsuya, Kumabe, Yu, Miyajima, Naoya, Kawamura, Keiko, Kobayashi, Kenya

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :355-358 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  2. 2
    مؤتمر
    Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness

    المؤلفون: Zhou, Tianyang, Zhou, Feng, Chen, Quanyou, Lyu, Xiaofeng, Xu, Weizong, Zhou, Dong, Ren, Fangfang, Chen, Dunjun, Xia, Yuanyang, Wu, Leke, Wang, Ke, Li, Yiheng, Zhu, Tinggang, Zhang, Rong, Zheng, Youdou, Lu, Hai

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :526-529 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  3. 3
    مؤتمر
    Experimental Demonstration of the Double-Trench, Buried-P JTE Edge Termination with Short Edge Width and High dV/dt Capability for 1200 V-class SiC Devices

    المؤلفون: Liu, Yong, Feng, Hao, Peng, Xin, Huang, Linhua, Sin, Johnny K.O.

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :17-20 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  4. 4
    مؤتمر
    A System for Detecting the Effectiveness of Cathodic Protection in Buried Pipelines

    المؤلفون: Haibo, Zhu, Hongwei, Li, Lei, Guo, Zhongyu, Li, Mingdong, Fu, Ge, Hong

    المصدر: 2024 36th Chinese Control and Decision Conference (CCDC) Control and Decision Conference (CCDC), 2024 36th Chinese. :2340-2344 May, 2024

    Relation: 2024 36th Chinese Control and Decision Conference (CCDC)

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  5. 5
    مؤتمر
    Improved RF Performance with Buried Power Rail and Contact over Active Gate in Nanosheet FETs

    المؤلفون: Chiu, Hao-Chi, Hu, Vita Pi-Ho

    المصدر: 2024 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2024 IEEE International Symposium on. :1-5 May, 2024

    Relation: 2024 IEEE International Symposium on Circuits and Systems (ISCAS)

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  6. 6
    دورية أكاديمية
    Research on Underground Positioning Technology for Buried PE Pipes Based on Acoustic Waveguide Resonance

    المؤلفون: Qi, Y., Wang, X., Sun, T., Rasool, G., Ali, A., Guo, Z., Zheng, H.

    المصدر: IEEE Sensors Journal IEEE Sensors J. Sensors Journal, IEEE. 24(14):22896-22906 Jul, 2024

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  7. 7
    دورية أكاديمية
    BS-PDN Implemented the Latest Logic Devices for 14 Angstrom Technology Node

    المؤلفون: Lee, J., Seungchul Song, S., Baek, R.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(7):4028-4032 Jul, 2024

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  8. 8
    دورية أكاديمية
    Ground-Penetrating Radar (GPR)-Based Mapping of Underground Pipeline Network Distribution

    المؤلفون: Xiao, X., Chen, S., Xu, Y., Ge, L., Wu, J.

    المصدر: IEEE Sensors Journal IEEE Sensors J. Sensors Journal, IEEE. 24(12):19562-19576 Jun, 2024

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  9. 9
    دورية أكاديمية
    Total Ionizing Dose Effects on 22 nm UTBB FD-SOI MOSFETs up to 100 Mrad(Si)

    المؤلفون: Zhang, R., Cui, J., Li, Y., Guo, Q., Zheng, Q.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(6):3490-3497 Jun, 2024

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  10. 10
    دورية أكاديمية
    Passing Word Line-Induced Subthreshold Leakage Reduction Using a Partial Insulator in a Buried Channel Array Transistor

    المؤلفون: Kim, S., Kim, D.Y., Park, J.W., Lee, S., Jang, H.S., Park, J., Yoo, S., Lee, M.J.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(5):2976-2982 May, 2024

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